Search results for "EMR"

Importance of the Window Function Choice for the Predictive Modelling of Memristors

2021

Window functions are widely employed in memristor models to restrict the changes of the internal state variables to specified intervals. Here, we show that the actual choice of window function is of significant importance for the predictive modelling of memristors. Using a recently formulated theory of memristor attractors, we demonstrate that whether stable fixed points exist depends on the type of window function used in the model. Our main findings are formulated in terms of two memristor attractor theorems, which apply to broad classes of memristor models. As an example of our findings, we predict the existence of stable fixed points in Biolek window function memristors and their absenc…

Dynamical attractors of memristors and their networks

2018

It is shown that the time-averaged dynamics of memristors and their networks periodically driven by alternating-polarity pulses may converge to fixed-point attractors. Starting with a general memristive system model, we derive basic equations describing the fixed-point attractors and investigate attractors in the dynamics of ideal, threshold-type and second-order memristors, and memristive networks. A memristor potential function is introduced, and it is shown that in some cases the attractor identification problem can be mapped to the problem of potential function minimization. Importantly, the fixed-point attractors may only exist if the function describing the internal state dynamics dep…

Handbook of Memristor Networks

2019

Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack

2019

Resistive switching (RS) is studied in a memristor based on a ZrO2(Y)/Ta2O5 stack under a white Gaussian noise voltage signal. We have found that the memristor switches between the low resistance state and the high resistance state in a random telegraphic signal (RTS) mode. The effective potential profile of the memristor shows from two to three local minima and depends on the input noise parameters and the memristor operation. These observations indicate the multiplicative character of the noise on the dynamical behavior of the memristor, that is the noise perceived by the memristor depends on the state of the system and its electrical properties are influenced by the noise signal. The det…

Nonstationary distributions and relaxation times in a stochastic model of memristor

2020

We propose a stochastic model for a memristive system by generalizing known approaches and experimental results. We validate our theoretical model by experiments carried out on a memristive device based on multilayer structure. In the framework of the proposed model we obtain the exact analytic expressions for stationary and nonstationary solutions. We analyze the equilibrium and non-equilibrium steady-state distributions of the internal state variable of the memristive system and study the influence of fluctuations on the resistive switching, including the relaxation time to the steady-state. The relaxation time shows a nonmonotonic dependence, with a minimum, on the intensity of the fluct…

Anomalous diffusion and nonlinear relaxation phenomena in stochastic models of interdisciplinary physics

2020

The study of nonlinear dynamical systems in the presence of both Gaussian and non-Gaussian noise sources is the topic of this research work. In particular, after shortly present new theoretical results for statistical characteristics in the framework of Markovian theory, we analyse four different physical systems in the presence of Levy noise source. (a) The residence time problem of a particle subject to a non-Gaussian noise source in arbitrary potential profile was analyzed and the exact analytical results for the statistical characteristics of the residence time for anomalous diffusion in the form of Levy flights in fully unstable potential profile was obtained. Noise enhanced stability …

Stochastic model of memristor based on the length of conductive region

2021

Abstract We propose a stochastic model of a voltage controlled bipolar memristive system, which includes the properties of widely used dynamic SPICE models and takes into account the fluctuations inherent in memristors. The proposed model is described by rather simple equations of Brownian diffusion, does not require significant computational resources for numerical modeling, and allows obtaining the exact analytical solutions in some cases. The noise-induced transient bimodality phenomenon, arising under resistive switching, was revealed and investigated theoretically and experimentally in a memristive system, by finding a quite good qualitatively agreement between theory and experiment. B…

Non-volatile memory characteristics of a Ti/HfO2/Pt synaptic device with a crossbar array structure

2022

The resistive switching and synaptic behavior of a fabricated Ti/HfO2/Pt crossbar array device are investigated. The results demonstrated that TiOx layers are created by the movement of oxygen ions during the positive SET process, thereby improving the endurance and multilevel switching behavior of the device. The random properties of SET process were described with the help of stochastic model of memristor based on the length of conductive filament. The analysis of the mean first passage time allows estimating the parameters of the dielectric switching layer such as the activation energy of the diffusive defects, its variation under the influence of the driving voltage and the value of the…

Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors

2018

The paper presents the resistive switching of electroforming-free Ti/anodic- TiO 2 /Cu memristors. Anodic TiO 2 thin films were prepared by anodizing Ti layers. Microscale devices were fabricated by direct laser-assisted photolithography. Experimental results showed a bipolar and self-rectifying behavior of the devices, which could be useful for crossbar array configurations. Moreover, a gradual resistive switching of the devices in both directions was observed, indicating the presence of multi-level resistance states.

RNA memory model: a RNA-mediated transcriptional activation mechanism involved in cell identity.

2010

Position-effect variegation (PEV) was discovered in Drosophila melanogaster in 1930 in a study of X-ray-induced chromosomal rearrangements. If a rearrangement places euchromatic genes adjacent to a region of centromeric heterochromatin, it gives a variegated phenotype that results from the random inactivation of genes by heterochromatin spreading from the breakpoint. After the establishment, the inactivation is henceforth clonally inherited. The vast majority of these modifiers were originally isolated in Drosophila as dominant mutations that suppressed or enhanced the variegation caused by a variegating white allele called white-mottled 4 (wm4). A large number of modifier genes alter PEV p…