6533b7d6fe1ef96bd1265cfa
RESEARCH PRODUCT
Stochastic model of memristor based on the length of conductive region
I.n. AntonovA. S. NovikovAngelo CarolloBernardo SpagnoloAlexander A. DubkovN. V. AgudovA A KharchevaA. V. SafonovM. N. KoryazhkinaDavud V. GuseinovA. V. KrichiginV.a. Shishmakovasubject
StochasticityYttria stabilized zirconiaSettore FIS/02 - Fisica Teorica Modelli E Metodi MatematiciComputer scienceStochastic modellingGeneral MathematicsApplied MathematicsSpiceGeneral Physics and AstronomyMarkov processStatistical and Nonlinear PhysicsMemristorMemristorBimodalitylaw.inventionsymbols.namesakelawsymbolsResistive switchingStatistical physicsTransient (oscillation)First-hitting-time modelBrownian motiondescription
Abstract We propose a stochastic model of a voltage controlled bipolar memristive system, which includes the properties of widely used dynamic SPICE models and takes into account the fluctuations inherent in memristors. The proposed model is described by rather simple equations of Brownian diffusion, does not require significant computational resources for numerical modeling, and allows obtaining the exact analytical solutions in some cases. The noise-induced transient bimodality phenomenon, arising under resistive switching, was revealed and investigated theoretically and experimentally in a memristive system, by finding a quite good qualitatively agreement between theory and experiment. Based on the proposed model, the mathematical apparatus of Markov processes for the first passage time of the boundaries can be used to analyse the temporal characteristics of resistive switching.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2021-09-01 |