0000000000276847

AUTHOR

V.a. Shishmakova

showing 3 related works from this author

Stochastic model of memristor based on the length of conductive region

2021

Abstract We propose a stochastic model of a voltage controlled bipolar memristive system, which includes the properties of widely used dynamic SPICE models and takes into account the fluctuations inherent in memristors. The proposed model is described by rather simple equations of Brownian diffusion, does not require significant computational resources for numerical modeling, and allows obtaining the exact analytical solutions in some cases. The noise-induced transient bimodality phenomenon, arising under resistive switching, was revealed and investigated theoretically and experimentally in a memristive system, by finding a quite good qualitatively agreement between theory and experiment. B…

StochasticityYttria stabilized zirconiaSettore FIS/02 - Fisica Teorica Modelli E Metodi MatematiciComputer scienceStochastic modellingGeneral MathematicsApplied MathematicsSpiceGeneral Physics and AstronomyMarkov processStatistical and Nonlinear PhysicsMemristorMemristorBimodalitylaw.inventionsymbols.namesakelawsymbolsResistive switchingStatistical physicsTransient (oscillation)First-hitting-time modelBrownian motion
researchProduct

Stochastic resonance in a metal-oxide memristive device

2021

Abstract The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide and tantalum pentoxide, which exhibits bipolar filamentary resistive switching of anionic type. The effect of white Gaussian noise superimposed on the sub-threshold sinusoidal driving signal is analyzed through the time series statistics of the resistive switching parameters, the spectral response to a periodic perturbation and the signal-to-noise ratio at the output of the nonlinear system. The stabilized resistive switching and the increased memristance response are revealed in the observed regularities…

Materials scienceStochastic modellingStochastic resonanceGeneral MathematicsGeneral Physics and AstronomyMemristor01 natural sciencesNoise (electronics)Signal010305 fluids & plasmaslaw.inventionsymbols.namesakelaw0103 physical sciencesstochastic resonance010301 acousticsCondensed matter physicsresistive switchingApplied MathematicsStatistical and Nonlinear PhysicsMemristoryttria-stabilized zirconium dioxideNonlinear systemAdditive white Gaussian noisesymbolstime series statistical analysis stochastic modelVoltagetantalum oxide
researchProduct

Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise

2022

The effects of external digitally synthesized Gaussian noise on the resistive state relaxation time of a ZrO2(Y)-based memristive device when switching from a low resistance state to a high resistance state have been experimentally investigated. A nonmonotonic dependence of the resistive state relaxation time on the external noise intensity is found. This behavior is interpreted as a manifestation of the noise-enhanced stability effect previously observed in various complex systems with metastable states. It is shown that the experimental results agree satisfactorily with the theoretical ones. The presented results indicate the constructive role of external noise and its possible use as a m…

MetastabilityNoise-enhanced stabilizationResistive switching; Memristor; Yttria-stabilized zirconia; Metastability; Noise-enhanced stabilization; Constructive role of noiseSettore FIS/02 - Fisica Teorica Modelli E Metodi MatematiciGeneral MathematicsApplied MathematicsConstructive role of noiseGeneral Physics and AstronomyStatistical and Nonlinear PhysicsResistive switchingMemristorYttria-stabilized zirconia
researchProduct