Search results for "EPITAXY"

Spin transport in multilayer systems with fully epitaxial NiO thin films

2018

We report the generation and transport of thermal spin currents in fully epitaxial $\ensuremath{\gamma}\text{\ensuremath{-}}\mathrm{F}{\mathrm{e}}_{2}{\mathrm{O}}_{3}/\mathrm{NiO}(001)/\mathrm{Pt}$ and $\mathrm{F}{\mathrm{e}}_{3}{\mathrm{O}}_{4}/\mathrm{NiO}(001)/\mathrm{Pt}$ trilayers. A thermal gradient, perpendicular to the plane of the sample, generates a magnonic spin current in the ferrimagnetic maghemite $(\ensuremath{\gamma}\text{\ensuremath{-}}\mathrm{F}{\mathrm{e}}_{2}{\mathrm{O}}_{3})$ and magnetite $(\mathrm{F}{\mathrm{e}}_{3}{\mathrm{O}}_{4})$ thin films by means of the spin Seebeck effect. The spin current propagates across the epitaxial, antiferromagnetic insulating NiO layer…

Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films

2018

We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The detected angular-dependent longitudinal and transverse magnetoresistances are measured by rotating the sample in magnetic fields up to 11 T, along three orthogonal planes (xy-, yz- and xz-rotation planes, where the z-axis is orthogonal to the sample plane). The total magnetoresistance has contributions arising from both the SMR and ordinary magnetoresistance. The onset of the SMR signal occurs between 1 and 3 T and no saturation is visible up to 11 T. Th…

Imaging of current induced Néel vector switching in antiferromagnetic Mn 2 Au

2019

The effects of current induced N\'eel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We observed current induced switching of AFM domains essentially corresponding to morphological features of the samples. Reversible as well as irreversible N\'eel vector reorientation was obtained in different parts of the samples and the switching of up to 30 % of all domains in the field of view of 10 $\mu$m is demonstrated. Our direct microscopical observations are compared to and fully consistent with anisotropic magnetoresistance effects previously attribu…

Electronic properties of Co2FeSi investigated by X-ray magnetic linear dichroism

2014

We present experimental XMLD spectra measured on epitaxial (001)-oriented thin Co$_{2}$FeSi films, which are rich in features and depend sensitively on the degree of atomic order and interdiffusion from capping layers. Al- and Cr-capped films with different degrees of atomic order were prepared by DC magnetron sputtering by varying the deposition temperatures. The local structural properties of the film samples were additionally investigated by nuclear magnetic resonance (NMR) measurements. The XMLD spectra of the different samples show clear and uniform trends at the $L_{3,2}$ edges. The Al-capped samples show similar behavior as previous measured XMLD spectra of Co$_2$FeSi$_{0.6}$Al$_{0.4…

Clean and ordered surfaces of CeNi 2 Ge 2 layers on W(110)

1997

Investigations of the geometric and electronic properties of ternary Ce-based heavy fermion systems CeT2X2 (T : Ni,Pd,Rh; X : Ge,Si) were carried out by means of electron spectroscopic methods. The main problem for these surface-sensitive techniques is the preparation of well-ordered and atomically clean surfaces. The ternary substance CeNi2Ge2 was grown on a W(110) substrate by MBE with subsequent annealing. A nearly layer-by-layer growth mode was detected using MEED. The annealed layers are ordered, but show small Ni2Ge crystalline islands. The composition was characterised by means of AES in dependence of the substrate as well as the annealing temperature. Electronic properties are inves…

Epitaxy and magnetotransport ofSr2FeMoO6thin films

2000

By pulsed-laser deposition epitaxial thin films of ${\mathrm{Sr}}_{2}{\mathrm{FeMoO}}_{6}$ have been prepared on (100) ${\mathrm{SrTiO}}_{3}$ substrates. Already for a deposition temperature of 320 \ifmmode^\circ\else\textdegree\fi{}C epitaxial growth is achieved. Depending on deposition parameters the films show metallic or semiconducting behavior. At high (low) deposition temperature the FeMo sublattice has a rock-salt (random) structure. The metallic samples have a large negative magnetoresistance which peaks at the Curie temperature. The magnetic moment was determined to $4{\ensuremath{\mu}}_{B}$ per formula unit (f.u.), in agreement with the expected value for an ideal ferrimagnetic ar…

2015

AbstractAtomic manipulation in the scanning tunnelling microscopy, conventionally a tool to build nanostructures one atom at a time, is here employed to enable the atomic-scale imaging of a model low-dimensional system. Specifically, we use low-temperature STM to investigate an ultra thin film (4 atomic layers) of potassium created by epitaxial growth on a graphite substrate. The STM images display an unexpected honeycomb feature, which corresponds to a real-space visualization of the Wigner-Seitz cells of the close-packed surface K atoms. Density functional simulations indicate that this behaviour arises from the elastic, tip-induced vertical manipulation of potassium atoms during imaging,…

Pressure dependence of optical phonons in ZnCdSe alloys

2003

5 páginas, 2 figuras, 2 tablas.-- PACS 62.50.+p, 63.20.Dj, 78.30.Fs, 78.66.Hf.-- et al.

Incommensurate phases in adsorbed monolayers: structure and energy of domain walls

2002

Abstract The properties of incommensurate films of domain-wall structure formed on the (1 0 0) plane of face centered cubic crystals are studied by Monte Carlo simulation. The wall energies, wall structure and the wall–wall interaction are determined for different types of domain walls occurring in films which form the c(2×2) registered structure. The systems characterized by different strength and corrugation of the surface potential and of different misfit between adsorbate and adsorbent are discussed. It is demonstrated that heavy as well as light walls are rather strongly localized. Moreover, it is shown that the incommensurate structure with crossing heavy walls has higher stability th…

Re-entrance phase formation of CeSb thin films

2001

Abstract We report the epitaxial growth of (1 0 0)- and (1 1 1)-oriented CeSb thin films on Al 2 O 3 (1 1 2 0) and (0 0 0 1) substrates by means of molecular beam epitaxy. Depending on the overall Sb-to-Ce flux ratio and the molecular state of Sb x , we observe a re-entrance behavior in the phase formation and orientation of CeSb on Al 2 O 3 (1 1 2 0) . This behavior is shown to exhibit, in some respect, similarities to III–V compound growth, but also more complexities due to the instability of the rare earth component against oxidation. A geometric orientation selection model is suggested which reproduces the observed re-entrance behavior as well as the overall CeSb growth rate.