Search results for "ESI"
showing 10 items of 46722 documents
Negative differential resistance and threshold-switching in conical nanopores with KF solutions
2021
Negative differential resistance (NDR) phenomena are under-explored in nanostructures operating in the liquid state. We characterize experimentally the NDR and threshold switching phenomena observed when conical nanopores are immersed in two identical KF solutions at low concentration. Sharp current drops in the nA range are obtained for applied voltages exceeding thresholds close to 1 V and a wide frequency window, which suggests that the threshold switching can be used to amplify small electrical perturbations because a small change in voltage typically results in a large change in current. While we have not given a detailed physical mechanism here, a phenomenological model is also includ…
Microfabricated high temperature sensing platform dedicated to scanning thermal microscopy (SThM)
2018
Abstract The monitoring of heat flux is becoming more and more critical for many materials and structures approaching nanometric dimensions. Scanning Thermal Microscopy (SThM) is one of the tools available for thermal measurement at the nanoscale and requires calibration. Here we report on a micro-hotplate device made of a platinum heater suspended on thin silicon nitride (SiN) membranes integrating specific features for SThM calibration. These heated reference samples can include a localized resistive temperature sensors (RTD) or standalone platinum membranes (typically 10 × 10 μm2) on which the temperature can be measured precisely. This functional area is dedicated to (1) estimate the th…
Measurement of the activation energies of oxygen ion diffusion in yttria stabilized zirconia by flicker noise spectroscopy
2019
The low-frequency noise in a nanometer-sized virtual memristor consisting of a contact of a conductive atomic force microscope (CAFM) probe to an yttria stabilized zirconia (YSZ) thin film deposited on a conductive substrate is investigated. YSZ is a promising material for the memristor application since it is featured by high oxygen ion mobility, and the oxygen vacancy concentration in YSZ can be controlled by varying the molar fraction of the stabilizing yttrium oxide. Due to the low diameter of the CAFM probe contact to the YSZ film (similar to 10nm), we are able to measure the electric current flowing through an individual filament both in the low resistive state (LRS) and in the high r…
A Novel Fault-Tolerant Routing Algorithm for Mesh-of-Tree Based Network-on-Chips
2019
Use of bus architecture based communication with increasing processing elements in System-on-Chip (SoC) leads to severe degradation of performance and speed of the system. This bottleneck is overcome with the introduction of Network-on-Chips (NoCs). NoCs assist in communication between cores on a single chip using router based packet switching technique. Due to miniaturization, NoCs like every Integrated circuit is prone to different kinds of faults which can be transient, intermittent or permanent. A fault in any one component of such a crucial network can degrade performance leaving other components non-usable. This paper presents a novel Fault-Tolerant routing Algorithm for Mesh-of-Tree …
Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization
2020
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…
Luminescence characteristics of magnesium aluminate spinel crystals of different stoichiometry
2019
We are grateful to Drs E. Vasil’chenko and A. Maaroos for the help with experiments and useful discussions. This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 under grant agreement No 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. In addition, the research leading to these results has received funding from the Estonian Research Council Institutional Research Funding IUT02-26.
High transparency Bi 2 Se 3 topological insulator nanoribbon Josephson junctions with low resistive noise properties
2019
Bi$_2$Se$_3$ nanoribbons, grown by catalyst-free Physical Vapour Deposition, have been used to fabricate high quality Josephson junctions with Al superconducting electrodes. The conductance spectra (dI/dV) of the junctions show clear dip-peak structures characteristic of multiple Andreev reflections. The temperature dependence of the dip-peak features reveals a highly transparent Al/Bi$_2$Se$_3$ topological insulator nanoribbon interface and Josephson junction barrier. This is supported by the high values of the Bi$_2$Se$_3$ induced gap and of I$_c$R$_n$ (I$_c$ critical current, R$_n$ normal resistance of the junction) product both of the order of 160 $\mu$eV, a value close to the Al gap. T…
Improving the high temperature oxidation resistance of Ti-β21S by mechanical surface treatment
2020
The improvement of the high temperature oxidation resistance of titanium alloys is currently a technological challenge. Mechanical surface treatments as shot-peening (SP) have shown their ability to improve the behaviour of pure zirconium and titanium. However, shot-peening treatments can induce a significant surface contamination. Laser shock peening (LSP) appears as a good alternative. Here, we have investigated the effect of SP and LSP treatments on the HT oxidation behavior of Ti-β21S. Samples treated by these methods have been compared to untreated ones for long exposures (3000 h) at 700 °C in dry air. The samples placed in a furnace at 700 °C were periodically extracted to be weighed.…
Controlled thermal oxidation of nanostructured vanadium thin films
2016
Abstract Pure V thin films were dc sputtered with different pressures (0.4 and 0.6 Pa) and particle incident angles α of 0°, 20° and 85°, by using the GLancing Angle Deposition (GLAD) technique. The sputtered films were characterized regarding their electrical resistivity behaviour in atmospheric pressure and in-vacuum conditions as a function of temperature (40–550 °C), in order to control the oxidation process. Aiming at comprehending the oxidation behaviour of the samples, extensive morphological and structural studies were performed on the as-deposited and annealed samples. Main results show that, in opposition to annealing in air, the columnar nanostructures are preserved in vacuum con…
Contrasting topologies for regular interconnection networks under the constraints of nanoscale silicon technology
2010
Nowadays, system designers have adopted Networks-on-Chip as communication infrastructure of general-purpose tile-based Multi-Processor System-on-Chip (MPSoC). Such decision implies that a certain topology has to be selected to efficiently interconnect many cores on the chip. To ease such a choice, the networking literature offers a plethora of works about topology analysis and characterization for the off-chip domain. However, theoretical parameters and many intuitive assumptions of such off-chip networks do not necessarily hold when a topology is laid out on a 2D silicon surface. This is due to the distinctive features of silicon technology design pitfalls. This work is a first milestone t…