Search results for "EXCITATION"
showing 10 items of 1290 documents
Recombination processes in unintentionally doped GaTe single crystals
2002
Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and…
Conformational heterogeneity of the point defects in silica: The lifetime of the phosphorescence band at 2.7 eV
2008
We have measured the excitation and emission energy dependence of the lifetimes of the 2.7 eV photoluminescence band associated to oxygen deficient centers in silica glasses. The non-exponential behavior of this time decay is consistent with intrinsic conformational heterogeneity of these point defects in the amorphous matrix. Accordingly, we have analyzed the data in terms of a radiative rates distribution. Moreover, both surface and bulk typologies of these point defects have been studied. The mean value of the lifetime distribution of the surface defects increases from 12 to 15 ms varying the excitation energy from 4.6 to 5.2 eV, and it increases from 14 to 15 ms in the emission energy i…
Raman and photoluminescence spectroscopy of zinc tungstate powders
2009
ZnWO4 powders, synthesized using co-precipitation technique and annealed in air at different temperatures in the range of 80-800 � C, were studied by Raman and photoluminescence spectroscopy. ZnWO4 single crystal was used for comparison. The interpretation of the observed variations of the Raman spectra and intrinsic photoluminescence band upon annealing is suggested.
Near band edge recombination mechanisms in GaTe
2003
GaTe samples of p-type have been investigated by analyzing the photoluminescence (PL) response for different excitation intensities at energies higher than the band gap. The PL intensity variation of recombination peaks as a function of the excitation intensity has been measured and fitted by a power law. The results show some particular features that do not appear in other III-V and II-VI compound semiconductors. These features can be interpreted by means of the recombination dynamics of the carriers in the band-gap edges. The expressions for the coefficients associated with different recombination rates and the relations between them are derived and used for understanding the recombinatio…
Luminescence properties of Eu, RE3+ (RE = Dy, Sm, Tb) co-doped oxyfluoride glasses and glass–ceramics
2017
Abstract Eu, RE3+ (RE = Dy, Sm, Tb) co-doped SiO2–CaF2–Al2O3–CaO oxyfluoride glasses have been prepared by the melt quenching method. By heating the precursor glasses at 670 °C for 1 h, glass–ceramics containing CaF2 nanocrystallites were obtained. DTA and XRD measurements were performed. Excitation spectra of the prepared samples as well as photoluminescence spectra at the excitation of 355 nm and 450 nm were measured, CIE colour coordinates and colour rendering indexes were found. In the glass–ceramics the presence of Eu2+ ions was observed by a broad emission band in the 400–500 nm spectral range. The most promising doping combinations for white light luminophores within our research are…
Optical emission of InAs nanowires
2012
Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to…
Photoluminescence of Ga-face AlGaN/GaN single heterostructures
2001
Abstract The radiative recombination in Ga-face Al 0.30 Ga 0.70 N/GaN single heterostructures (SHs) was studied by photoluminescence (PL) measurements. An energy shift of the excitonic transitions toward higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. In addition to these exciton lines, a broad band energetically localized between the exciton lines and the LO-phonon replica was noticed in the undoped SH. From its energy position, excitation power dependence, as well as temperature behaviour, we have attributed this luminescence to the H -band (HB), which is representative of the two-dimensional electron gas (2DEG) recombination.
Excitation and photoluminescence spectra of single- and non-single-phased phosphors based on LaInO3 doped with Dy3+, Ho3+ activators and Sb3+ probabl…
2017
Abstract Single-phased La 0.95 Ln 0.05 InO 3 ( Ln – Dy, Ho), La 0.90 Dy 0.05 Ho 0.05 InO 3 , LaInO 3 ceramic samples as well as the La 0.95 Ln 0.05 In 0.98 Sb 0.02 O 3 ( Ln – Dy, Ho), La 0.90 Dy 0.05 Ho 0.05 In 0.98 Sb 0.02 O 3 , LaIn 0.98 Sb 0.02 O 3 samples with additional impurity LaSbO 3 phase were prepared by solid-state reactions method. Their excitation and photoluminescence (PL) spectra were measured at room temperature. It was established that PL bands intensity of spectra obtained for samples of nominal composition La 0.95 Dy 0.05 In 0.98 Sb 0.02 O 3 , La 0.95 Ho 0.05 In 0.98 Sb 0.02 O 3 , La 0.90 Dy 0.05 Ho 0.05 In 0.98 Sb 0.02 O 3 is much higher than that of single-phase La 0.95…
Luminescence in SrTiO3and LiNbO3Crystals Under High Density Pulsed Electron Excitation
2004
The time-resolved luminescence as well as stationary excited luminescence in SrTiO3 (undoped, Nb and Pb doped) and LiNbO3 (congruent and stoichiometric) single crystals was studied. The charge-transfer vibronic exciton in the regular oxy-anion site is suggested to be responsible for luminescence bands at 2.8 eV and 2.75 eV for SrTiO3 and LiNbO3 crystals respectively. It is suggested that luminescence band observed in SrTiO3 at ∼2.2-2.3 eV above 80 K possibly is due to some defect common for all SrTiO3 crystals studied.
Photoluminescence of Si nanocrystals embedded in SiO2: Excitation/emission mapping
2014
Time-resolved photoluminescence from Si nanocrystals produced by 1100∘C thermal annealing of SiOx/SiO2 multilayers were investigated by tunable laser excitation, achieving a detailed excitation/emission pattern in the visible and UV range. The emission lineshape is a gaussian curve inhomogenously broadened because of the size distribution of Si nanocrystals, the excitation spectrum consists of the overlap of two gaussian bands centered around 3.4 and 5.1 eV. The mapping of luminescence spectral components with the lifetime points out the energy cubic dependence of the spontaneous emission rate. These findings are interpreted on the basis of models proposed in literature that associate this …