Search results for "EXCITON"
showing 10 items of 317 documents
Defect-induced blue luminescence of hexagonal boron nitride
2016
Abstract Native defect-induced photoluminescence around 400 nm (blue luminescence - BL) was studied in hBN materials with different size and various origins. The following spectral characterizations were used: spectra of luminescence and its excitation, luminescence dependence on temperature, luminescence kinetics, optically stimulated luminescence and infrared absorption. It was found, that the BL is characteristic for all these materials, which were studied. The BL forms a wide, asymmetric and phonon-assisted emission band at 380 nm. This luminescence can be excited either through the exciton processes, or with light from two defect-induced excitation bands at 340 nm and 265 nm. It was fo…
Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide.
2019
Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe2 and MoSe2. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe2 and MoSe2 at room-…
Nanoscale strain-engineering and optics of quantum emitters in a two-dimensional semiconductor
2017
We present deterministic fabrication of a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. Resonant laser spectroscopy of these emitters reveals localized exciton states that exhibit stable, bright and high-purity single photon emission.
Tunable Superstructures of Dendronized Graphene Nanoribbons in Liquid Phase
2019
In this Communication, we report the first synthesis of structurally well-defined graphene nanoribbons (GNRs) functionalized with dendritic polymers. The resultant GNRs possess grafting ratios of 0.59-0.68 for the dendrons of different generations. Remarkably, the precise 3D branched conformation of the grafted dendrons affords the GNRs unprecedented 1D supramolecular self-assembly behavior in tetrahydrofuran (THF), yielding nanowires, helices and nanofibers depending on the dimension of the dendrons. The GNR superstructures in THF exhibit near-infrared absorption with maxima between 650 and 700 nm, yielding an optical bandgap of 1.2-1.3 eV. Ultrafast photoconductivity analyses unveil that …
Light-induced transmission nonlinearities in gallium selenide
1999
The intensity of a He–Ne laser (633 nm, 5 mW) transmitted by different GaSe samples is observed to change in correlation with a Nd-yttrium–aluminum–garnet laser pulse (532 nm, 7.8 ns, 3 mJ) which excites them. Such time response has been attributed to a nonlinear optical effect, i.e., a decrease in the refractive index due to the exciton screening by the photogenerated carriers. A calculation of the absorption coefficient and refractive index at different carrier concentrations has led to a reconstruction of transmittance transients which fully agree with the experimental data at different incident intensities and temperatures. Chantal.Ferrer@uv.es ; Jaqueline.Bouvier@uv.es ; Miguel.Andres@…
Ab Initio Studies of Triplet-State Properties for Organic Semiconductor Molecules
2012
Triplet–triplet annihilation (TTA) leads to a reduced efficiency of organic light-emitting diodes (OLEDs) at high current densities. Spacial confinement of the triplet excitons, which is mainly dependent on triplet energy differences, can reduce the TTA rate. Therefore, a deliberate choice of the organic semiconductor materials with particular attention to their triplet energies can help to considerably increase the device efficiency. Organic solid-state lasers are, on the other hand, efficiently quenched by singlet–triplet annihilation (STA), which is closely related to the triplet–triplet absorption of the organic semiconductors. To establish a useful set of parameters related to the proc…
On nature of the transient IR-absorption STE-like bands at 0.15–0.36eV in alkali halides
2001
New evidence is given that two classes (A and B) of the transient IR-absorption bands: (A) with max. at 0.15-0.36 eV (in NaCl : I, NaBr, NaI, KCl : I, KBr : I, RbCl : I, RbBr : I), due to on-centre self-trapped exciton and (B) with max. at 0.27-0.36 eV (in NaCI, KCl, KBr, RbCl), due to shallow trapped electrons or bound polarons, are caused by the same defect-shallow trapped electron (e-) at the substitutional (cation: c-site) alkali impurity cation (M + ): [M - ] 0 c e - . The A- and B-class IR bands have the same location, similar shape, half-width (exactly coincide for KCl : I and KCl at 80 or 10 K with the same vibration structure). It is established that the same Mollwo-Ivey plot curve…
Biexciton formation and exciton coherent coupling in layered GaSe.
2015
Nonlinear two-dimensional Fourier transform (2DFT) and linear absorption spectroscopy are used to study the electronic structure and optical properties of excitons in the layered semiconductor GaSe. At the 1s exciton resonance, two peaks are identified in the absorption spectra, which are assigned to splitting of the exciton ground state into the triplet and singlet states. 2DFT spectra acquired for co-linear polarization of the excitation pulses feature an additional peak originating from coherent energy transfer between the singlet and triplet. At cross-linear polarization of the excitation pulses, the 2DFT spectra expose a new peak likely originating from bound biexcitons. The polarizati…
<title>Influence of radiation defects on exciton-magnon interactions in nickel oxide</title>
2005
Influence of radiation defects on the optical absorption spectrum of nickel oxide (NiO) was studied at 6 K in the near-IR energy range of 7750-8300 cm-1 corresponding to the magnetic-dipole transition 3A 2g(F )->3T 2g(F ) at nickel sites. NiO single crystals grown by the method of chemical transport reactions on the MgO(100) substrates were irradiated by the neutron fluences up to 5x1018 cm-2. Two sharp lines were observed at the low-energy side of the band: the peak at 7805 cm-1 is assigned to the pure exciton transition, whereas the peak at 7845 cm-1, to the exciton-magnon excitation that occurs at the Brillouin zone-center (BZC). An increase of the defect concentration at higher fluences…
Investigation of molecular dimers by ensemble and single molecule spectroscopy
2002
International audience; We have investigated molecular dimers with different electronic coupling strengths by bulk and single molecule spectroscopy. In one of the dimers the two monomers (perylene-monoimide) are directly connected via a single bond while in the other one they are separated by the benzil motif. The close proximity of the monomers in the first case gives rise to excitonic band splitting which is clearly observable in the bulk absorption spectra. For the benzil structure the electronic interactions are governed by Förster-type energy hopping between the monomers. Fluorescence intensity trajectories at the single molecule level show one-step and two-step bleaching behaviour whi…