Search results for "Electron mobility"
showing 10 items of 60 documents
Space Charge and Carrier Trapping Effects on the Transient Photocurrents of Organic Materials Using the Time-of-Flight Technique
2007
We apply the time-of-flight (TOF) technique to study space charge and carrier trapping effects in the organic materials N,N'-diphenyl-N,N'-bis(3- methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD) and tris(8-hydroxyquinolato) aluminum (Alq3). This is carried out by changing the applied electric field, the laser pulse intensity, and the repetition rate together with environmental conditions in air or in vacuum. We report for the first time, to the best of our knowledge, a clearly nondispersive electron transport in TPD due to the absence of deep traps. Conversely, Alq3 exhibits a dispersive electron transport. However, this can be partially recovered by leaving the sample in high vacuum for sever…
SURFACE EFFECTS ON THE GROWTH OF SOLUTION PROCESSED PENTACENE THIN FILMS
2008
13,6-N-Sulfinylacetamidopentacene (SAP) has been transferred on solid substrates both by water-rich environment and organic solvents without altering his chemical structure. Thermal conversion of SAP to pentacene leads to crystals showing similar features of vacuum-sublimated pentacene both in the bulk and thin-film phases. The thin-film phase is strongly affected by the substrate surface properties. Low energy Si-CH3 rich surfaces allow for the formation of compact micrometric crystals following a Volmer-Weber like growth with orientation suitable for field-effect carrier mobility. Screw dislocations along with straight edges are found on these systems as an indication of a loose interlaye…
Differently substituted benzonitriles for non-doped OLEDs
2020
DG acknowledges to the ERDF PostDoc grant No. 1.1.1.2/VIAA/1/16/177 . This research was funded by the European Regional Development Fund according to the supported activity ‘Research Projects Implemented by World-class Researcher Groups’ under Measure No. 01.2.2-LMT-K-718 .
Discotic Liquid Crystals - A New Class of Fast Photoconductors
1993
We showed for the first time that discotic liquid crystals are well suited for a new class of fast photoconducting materials. Due to their spontaneous orientation and their dynamical fluctuations in the mesophase, they show exceptionally high mobilities of 1·10−3 cm2/Vs, about two to three orders of magnitude higher than those obtained for conventional amorphous polymers. Further on, the Gaussian transport (for holes in the mesophase) is remarkable, which is characterized by the existence of a conduction band and the absence of trapping states. In contrast, the charge carrier transport in amorphous photoconductors is generally trap-dominated which limits technical properties, leading to low…
High-pressure electrical transport measurements on p-type GaSe and InSe
2006
We performed high-pressure Hall effect and resistivity measurements in p-type GaSe and InSe up to 12 GPa. The pressure behaviour of the transport parameters shows dramatic differences between both materials. In GaSe, the hole concentration and mobility increase moderately and continuously. In InSe, the hole mobility raises rapidly and the hole concentration increases abruptly near 0.8 GPa. The observed results are attributed to the different pressure evolution of the valence-band structure in each material. In InSe a carrier-type inversion is also detected near 4.5 GPa.
Three-dimensional electrons and two-dimensional electric subbands in the transport properties of tin-dopedn-type indium selenide: Polar and homopolar…
1991
Electron-scattering mechanisms in n-type indium selenide doped with different amounts of tin are studied by means of the Hall effect (30--300 K) and photo-Hall effect (300 K). The electron mobility at room temperature is found to increase with the free-electron concentration in samples with low tin content. The same behavior is observed when the electron concentration increases due to thermal annealing or photogeneration. That is explained through the presence of two kinds of free electrons contributing to the charge transport along the layers: high-mobility three-dimensional (3D) electrons in the conduction band, and low-mobility two-dimensional electrons in the electric subbands. These 2D…
Structure and characteristics of laser crystallized thin amorphous Si films
2011
Abstract Pure amorphous Si thin films deposited on oxidized crystalline Si surface (111) were crystallized by picosecond UV laser pulses. The Raman scattering spectra show that pulse energy of 330 mJ/cm2 is enough to fully crystallize Si film and further increase of the energy does not improve crystallinity. A large grained polycrystalline Si was obtained as revealed by surface analysis. A significant increase in carrier mobility was observed after laser crystallization.
Determination of charge carrier mobility of hole transporting polytriarylamine-based diodes
2010
Hole transport properties of three different side chain poly(triarylamines) have been determined by means of the analysis of steady-state current-voltage characteristics using co-planar diode structures. The interpretation is based on space-charge limited models with field-dependent mobility. Mobilities between ~ 10- 8 and 10- 6 cm2 V- 1 s- 1 are obtained. The highest mobility is achieved for poly(tetraphenylbenzidine) devices and the lowest for poly(triphenylamine) devices. Electron-rich methoxy substituents increase the mobility of poly(triphenylamine)s. A comparison of the mobility values with those obtained using organic field-effect transistors is also given. © 2009 Elsevier B.V. All r…
Investigation of conduction-band structure, electron-scattering mechanisms, and phase transitions in indium selenide by means of transport measuremen…
1996
In this work we report on Hall effect, resistivity and thermopower measurements in n-type indium selenide at room temperature under either hydrostatic and quasi-hydrostatic pressure. Up to 40 kbar (= 4 GPa), the decrease of carrier concentration as the pressure increases is explained through the existence of a subsidiary minimum in the conduction band. This minimum shifts towards lower energies under pressure, with a pressure coefficient of about -105 meV/GPa, and its related impurity level traps electrons as it reaches the band gap and approaches the Fermi level. The pressure value at which the electron trapping starts is shown to depend on the electron concentration at ambient pressure an…
Transport measurements under pressure in III–IV layered semiconductors
2007
PACS 61.50.Ks, 62.50.+p, 72.15.Jf, 72.80.Jc This paper reports on Hall effect, resistivity and thermopower effect measurements under high pressure up to 12 GPa in p-type γ-indium selenide (InSe) and e-gallium selenide (GaSe). The paper focuses on two applications of transport measurements under pressure: electronic structure and phase transition studies. As concerns the electronic structure, we investigate the origin of the striking differences between the pressure behaviour of transport parameters in both layered compounds. While the hole concentration and mobility increase moderately and monotonously in e-GaSe up to 10 GPa, a large increase of the hole concentration at near 0.8 GPa and a …