Search results for "Electron mobility"
showing 10 items of 60 documents
Extremely slow Drude relaxation of correlated electrons
2005
The electrical conduction of metals is governed by how freely mobile electrons can move throughout the material. This movement is hampered by scattering with other electrons, as well as with impurities or thermal excitations (phonons). Experimentally, the scattering processes of single electrons are not observed, but rather the overall response of all mobile charge carriers within a sample. The ensemble dynamics can be described by the relaxation rates, which express how fast the system approaches equilibrium after an external perturbation1,2,3. Here we measure the frequency-dependent microwave conductivity of the heavy-fermion metal UPd2Al3 (ref. 4), finding that it is accurately described…
Spatiotemporal carrier dynamics in quantum wells under surface acoustic waves
2004
We present a theoretical study of transport and recombination of electrons and holes in quantum wells under the piezoelectric field induced by a surface acoustic wave (SAW). Our model calculations, which include free carriers and excitons in the framework of the drift-diffusion equations, describe the spatial and time dependences of the photoluminescence intensity on excitation density and SAW amplitude, and show overall agreement with recent microphotoluminescence experiments performed on GaAs/(Al,Ga)As quantum wells and quantum wires.
Crystal symmetry and pressure effects on the valence band structure ofγ-InSe andε-GaSe: Transport measurements and electronic structure calculations
2005
This paper reports on Hall effect and resistivity measurements under high pressure up to 3--4 GPa in $p$-type $\ensuremath{\gamma}$-indium selenide (InSe) (doped with As, Cd, or Zn) and $\ensuremath{\epsilon}$-gallium selenide (GaSe) (doped with N or Sn). The pressure behavior of the hole concentration and mobility exhibits dramatic differences between the two layered compounds. While the hole concentration and mobility increase moderately and monotonously in $\ensuremath{\epsilon}$-GaSe, a large increase of the hole concentration near 0.8 GPa and a large continuous increase of the hole mobility, which doubled its ambient pressure value by 3.2 GPa, is observed in $\ensuremath{\gamma}$-InSe.…
Failure analysis of normally-off GaN HEMTs under avalanche conditions
2020
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) are promising devices in the power electronics field owing to their wide bandgap (WBG). However, all the potential advantages provided by their WBG require reliability improvement. In industrial applications, robustness is one of the main factors considered by circuit designers. This study focuses on the observation of the degradation behavior of the main waveforms of unclamped inductive-switching (UIS) test circuits of two different commercial GaN HEMT structures. The relevance of this study lies in the potential applications of these devices to high-voltage applications and automotive systems where they are subjected to many…
Possible light-induced superconductivity in K3C60 at high temperature.
2015
The non-equilibrium control of emergent phenomena in solids is an important research frontier, encompassing effects such as the optical enhancement of superconductivity. Nonlinear excitation of certain phonons in bilayer copper oxides was recently shown to induce superconducting-like optical properties at temperatures far greater than the superconducting transition temperature, Tc. This effect was accompanied by the disruption of competing charge-density-wave correlations, which explained some but not all of the experimental results. Here we report a similar phenomenon in a very different compound, K3C60. By exciting metallic K3C60 with mid-infrared optical pulses, we induce a large increas…
On the development of a new approach to the design of lanthanide-based materials for solution-processed OLEDs
2019
The targeted design of lanthanide-based emitters for solution-processed organic light-emitting diodes (OLEDs) resulted in obtaining an NIR OLED with one of the highest efficiencies among ytterbium-based solution-processed OLEDs (30 μW W-1). The design was aimed at the combination of high luminescence efficiency with solubility and charge carrier mobility. The latter was achieved thanks to the introduction of the purposefully selected neutral ligands, which combine electron mobility and the ability to sensitize lanthanide luminescence. Besides, the HOMO and LUMO energies and charge carrier mobility of solution-processed thin films of coordination compounds were measured experimentally for th…
Polymer solar cells based on diphenylmethanofullerenes with reduced sidechain length
2011
Diphenylmethanofullerenes (DPMs) show interesting properties as acceptors in polymer bulk heterojunction solar cells due to the high open circuit voltages they generate compared to their energy levels. Here we investigate the effect of reducing the alkane sidechain length of the DPMs from C12 to C6 in the properties of the solar cell. This change leads to an increase in the electron mobility, thus allowing for a lower fullerene content, which in turn results in an increase in the short circuit current and, finally, in an increase in the efficiency of the device (from 2.3 to 2.6%) due to the higher concentration of the more absorbing polymer in the film. Atomic force microscopy images and ex…
Naphthalenediimide Polymers with Finely Tuned In-Chain π-Conjugation: Electronic Structure, Film Microstructure, and Charge Transport Properties
2016
Naphthalenediimide-based random copolymers (PNDI-TVTx) with different π-conjugated dithienylvinylene (TVT) versus π-nonconjugated dithienylethane (TET) unit ratios (x = 100→0%) are investigated. The PNDI-TVTx-transistor electron/hole mobilities are affected differently, a result rationalized by molecular orbital topologies and energies, with hole mobility vanishing but electron mobility decreasing only by ≈2.5 times when going from x = 100% to 40%.
Growth and characterization of GdxHg1−xSe crystals
2008
Abstract The growth of GdxHg1−xSe crystals by the vertical Bridgman method was studied in the composition range 0⩽x⩽0.1. The structural and electronic properties of GdxHg1−xSe crystals were investigated as a function of composition. It was found that an increase in gadolinium content up to x=0.01 results in a decrease of structural defects and an increase in electron mobility up to the maximum value of μ77≈2.8×105 cm2/V s. Structural defects start to increase at x>0.01, and the formation of Gd2Se3 amorphous phase takes place at x>0.03. On the base of the electron-spin resonance investigation, it was shown that the Gd incorporates into the HgSe host in Gd3+ charge state at the concentration …
New conducting radical salts based upon Keggin-type polyoxometalates and perylene
2004
Three new radical salts, Per6[PMo12O40]·CH2Cl2 (1), Per6[PMo12O40]·CH3CN (2), and Per9(NBu4)4[SiW12O40]2 (3) (Per = perylene), have been synthesised and their electrical and magnetic properties characterised. These three salts are diamagnetic and they behave as semiconductors with room temperature conductivities of 69, 3.6 and 0.85 S cm−1. While salt 2 presents hole-type conduction and 3 exhibits electron-dominated electrical transport properties, salt 1 shows at 150 K an abrupt change in the thermal dependence of the electrical conductivity and the Seebeck coefficient suggesting a phase transition.