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RESEARCH PRODUCT

Growth and characterization of GdxHg1−xSe crystals

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Abstract The growth of GdxHg1−xSe crystals by the vertical Bridgman method was studied in the composition range 0⩽x⩽0.1. The structural and electronic properties of GdxHg1−xSe crystals were investigated as a function of composition. It was found that an increase in gadolinium content up to x=0.01 results in a decrease of structural defects and an increase in electron mobility up to the maximum value of μ77≈2.8×105 cm2/V s. Structural defects start to increase at x>0.01, and the formation of Gd2Se3 amorphous phase takes place at x>0.03. On the base of the electron-spin resonance investigation, it was shown that the Gd incorporates into the HgSe host in Gd3+ charge state at the concentration x⩽0.01.