0000000000485128

AUTHOR

N. V. Sochinskii

showing 5 related works from this author

Vapor phase epitaxy of Hg1−xCdxI2 layers on CdTe substrates

1997

Vapor phase epitaxy (VPE) has been studied to grow Hg1 − xCdxI2 epitaxial layers on CdTe bulk substrates. The effect of the VPE growth conditions on the morphology, composition and crystalline quality of Hg1 − xCdxI2CdTe heterostructures has been investigated. It has been shown that 10–30 μm thick Hg1 − xCdxI2 layers can be successfully grown using an α-HgI2 polycrystalline source under isothermal conditions at a temperature in the range 170–240°C for the time period 20–50 h. Interestingly, the VPE growth was found to consist of two successiv stages with different kinetics as follows: (1) a fast growth of an HgI2 platelet layer on the CdTe substrate surface and (2) a slow growth of an Hg1 −…

Morphology (linguistics)ChemistryStereochemistryKineticsAnalytical chemistryHeterojunctionCondensed Matter PhysicsEpitaxyIsothermal processCadmium telluride photovoltaicsInorganic ChemistryMaterials ChemistryCrystalliteLayer (electronics)Journal of Crystal Growth
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Growth and characterization of GdxHg1−xSe crystals

2008

Abstract The growth of GdxHg1−xSe crystals by the vertical Bridgman method was studied in the composition range 0⩽x⩽0.1. The structural and electronic properties of GdxHg1−xSe crystals were investigated as a function of composition. It was found that an increase in gadolinium content up to x=0.01 results in a decrease of structural defects and an increase in electron mobility up to the maximum value of μ77≈2.8×105 cm2/V s. Structural defects start to increase at x>0.01, and the formation of Gd2Se3 amorphous phase takes place at x>0.03. On the base of the electron-spin resonance investigation, it was shown that the Gd incorporates into the HgSe host in Gd3+ charge state at the concentration …

chemistry.chemical_classificationElectron mobilityRange (particle radiation)Base (chemistry)GadoliniumDopingAnalytical chemistryResonancechemistry.chemical_elementElectronic structureCondensed Matter Physicslaw.inventionInorganic ChemistryNuclear magnetic resonancechemistrylawMaterials ChemistryElectron paramagnetic resonanceJournal of Crystal Growth
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Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

2008

http://link.aip.org/link/?JAPIAU/103/056108/1

Materials sciencePhotoluminescenceSapphireSpectral line intensityCadmium compoundsIon platingAnalytical chemistryUNESCO::FÍSICASemiconductor epitaxial layersGeneral Physics and AstronomyII-VI semiconductorsEpitaxyAcceptorVapour phase epitaxial growthEtchingEtching (microfabrication):FÍSICA [UNESCO]Ion beam assisted depositionMOCVDSapphireCadmium compounds ; Etching ; II-VI semiconductors ; Impurities ; Ion beam assisted deposition ; MOCVD ; Photoluminescence ; Sapphire ; Semiconductor epitaxial layers ; Spectral line intensity ; Vapour phase epitaxial growthMetalorganic vapour phase epitaxyIon beam-assisted depositionPhotoluminescenceImpurities
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Effect of structural and compositional inhomogeneities on spin-glass transition in Hg1−x−yCrxMnySe crystals

2004

Abstract We report experimental results on the growth of Hg 1 −x−y Cr x Mn y Se crystals and their magnetic susceptibility χ ( T ) in dependence on the crystal structure and composition. It was found that the crystals with the Mn composition y =0.01–0.08 exhibit the spin-glass transition temperature T g =100–110 K. An increase of y value leads to the saturation of the χ max and T g characteristics in the composition ranges of y >0.06 and y >0.02, respectively. This phenomenon is explained as a result of phase-separated magnetic behavior caused by the formation of HgCr 2 Se 4 inclusions and textures.

Spin glassScanning electron microscopeChemistryTransition temperatureAnalytical chemistryCrystal structureMagnetic semiconductorCondensed Matter PhysicsMagnetic susceptibilityInorganic ChemistryNuclear magnetic resonanceMaterials ChemistryGlass transitionSaturation (magnetic)Journal of Crystal Growth
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Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

1997

Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…

Materials scienceSemiconductor MaterialsGrain BoundariesScanning electron microscopeVapor phaseGeneral Physics and AstronomyMercury Compounds ; Cadmium Compounds ; Semiconductor Materials ; Vapour Phase Epitaxial Growth ; Semiconductor Growth ; Semiconductor Epitaxial Layers ; Scanning Electron Microscopy ; X-Ray Topography ; Grain BoundariesEpitaxylaw.inventionlaw:FÍSICA [UNESCO]Cadmium CompoundsSemiconductor Epitaxial Layersbusiness.industryMercury CompoundsX-Ray TopographyUNESCO::FÍSICASynchrotronCadmium telluride photovoltaicsCrystallographySemiconductor GrowthOptoelectronicsVapour Phase Epitaxial GrowthGrain boundaryCrystalliteScanning Electron MicroscopybusinessLayer (electronics)
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