6533b831fe1ef96bd1298528

RESEARCH PRODUCT

Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

M. AbellánN. V. SochinskiiJuan P. Martínez-pastorDavid FusterJ. Anguita

subject

Materials sciencePhotoluminescenceSapphireSpectral line intensityCadmium compoundsIon platingAnalytical chemistryUNESCO::FÍSICASemiconductor epitaxial layersGeneral Physics and AstronomyII-VI semiconductorsEpitaxyAcceptorVapour phase epitaxial growthEtchingEtching (microfabrication):FÍSICA [UNESCO]Ion beam assisted depositionMOCVDSapphireCadmium compounds ; Etching ; II-VI semiconductors ; Impurities ; Ion beam assisted deposition ; MOCVD ; Photoluminescence ; Sapphire ; Semiconductor epitaxial layers ; Spectral line intensity ; Vapour phase epitaxial growthMetalorganic vapour phase epitaxyIon beam-assisted depositionPhotoluminescenceImpurities

description

http://link.aip.org/link/?JAPIAU/103/056108/1

yearjournalcountryeditionlanguage
2008-01-01
10.1063/1.2874480http://hdl.handle.net/10261/11694