Search results for "Electronic"

showing 10 items of 17076 documents

Space Charges and Partial Discharges Simultaneous Measurements under DC Stress

2016

In the field of HVDC, the main causes of insulation aging are due to the space charge and PD phenomena. In particular, the purpose of the present work is to verify a possibility to measure simultaneously the space charge and the PDs under DC stress in order to evaluate the correlation between both phenomena. The space charge was measured by using a modified PEA cell and PDs were measured by using a novel wireless sensor system. The space charge profile and the PD pulses carried out simultaneously have been reported and discussed.

010302 applied physicsMaterials sciencebusiness.industry020209 energyElectrical engineering02 engineering and technologyMechanicsSpace (mathematics)01 natural sciencesspace charge partial discharges DC stress HVDCStress (mechanics)Settore ING-IND/31 - Elettrotecnica0103 physical sciences0202 electrical engineering electronic engineering information engineeringbusiness
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Partial discharge of gel insulated high voltage power modules subjected to unconventional voltage waveforms

2016

Performances and duration of the new generation of high voltage power electronic components are dependent on dielectric materials aim to insulating their internal terminals. The presence of defects, some due to faults generated during the manufacturing process, but also due to the internal design of layers and connections, can cause local enhancements of electric field and consequently possible activity of partial discharges phenomena or other effects (aging, tracking) that may result in reduction of device reliability. Furthermore, the usage of unconventional voltage waveforms, like square waves or pulse width modulated waves, additionally increases the electrical aging of the insulation s…

010302 applied physicsMaterials sciencebusiness.industryAcoustics020208 electrical & electronic engineeringElectrical engineeringHigh voltage02 engineering and technologyInsulated-gate bipolar transistor01 natural sciencesSettore ING-IND/31 - ElettrotecnicaReliability (semiconductor)Partial Discharge Gel insulation IGBTvisual_artInsulation systemPower module0103 physical sciencesElectronic componentPartial discharge0202 electrical engineering electronic engineering information engineeringvisual_art.visual_art_mediumbusinessVoltage2016 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP)
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Partial discharge detection and localization along medium voltage cables

2017

In the last years different partial discharge (PD) measuring techniques have been developed because PD diagnostic is the most widely tool to evaluate the insulation condition of a power cable. Recently non-conventional methods and sensors have been used in order to reach improved results in PD measurements. The purpose of this work is to perform measurements that allow to study the variation of pulses when they travel along a MV cable and to locate the pulse source through the time arrival difference of the pulses obtained from two sensors installed separately.

010302 applied physicsMaterials sciencebusiness.industryAcousticsElectronic Optical and Magnetic Material01 natural sciencesPulse (physics)PD measurementSettore ING-IND/31 - Elettrotecnica0103 physical sciencesPartial dischargeWirelessPower cablePD localizationPartial DischargeElectrical and Electronic EngineeringbusinessVoltage
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Selective Band Gap to Suppress the Spurious Acoustic Mode in Film Bulk Acoustic Resonator Structures

2018

In this work, we investigate numerically the propagation of Lamb waves in a film bulk acoustic resonator (FBAR) structure formed by piezoelectric ZnO layer sandwiched between two Mo electrodes coupled with Bragg reflectors; the system is thus considered as a phononic-crystal (PnC) plate. The aim is to suppress the first-order symmetric Lamb wave mode considered as a spurious mode caused by the establishment of a lateral standing wave due to the reflection at the embedded lateral extremities of the structure; this spurious mode is superposing to the main longitudinal mode resonance of the FBAR. The finite element study, using harmonic and eigen-frequency analyses, is performed on the section…

010302 applied physicsMaterials sciencebusiness.industryBand gapGeneral EngineeringResonance02 engineering and technology021001 nanoscience & nanotechnologyAntiresonance01 natural sciencesStanding waveResonatorQ factor0103 physical sciencesReflection (physics)Optoelectronics0210 nano-technologybusinessSpurious relationshipJournal of Vibration and Acoustics
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2018

Damping distances of surface plasmon polariton modes sustained by different thin titanium nitride (TiN) films are measured at the telecom wavelength of 1.55 μm. The damping distances are correlated to the electrical direct current resistivity of the films sustaining the surface plasmon modes. It is found that TiN/Air surface plasmon mode damping distances drop non-linearly from 40 to 16μm as the resistivity of the layers increases from 28 to 130μΩ.cm, respectively. The relevance of the direct current (dc) electrical resistivity for the characterization of TiN plasmonic properties is investigated in the framework of the Drude model, on the basis of parameters extracted from spectroscopic ell…

010302 applied physicsMaterials sciencebusiness.industryDirect currentSurface plasmonPhysics::Opticschemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesDrude modelSurface plasmon polaritonAtomic and Molecular Physics and OpticsCondensed Matter::Materials ScienceOpticschemistryElectrical resistivity and conductivityPhysical vapor deposition0103 physical sciencesOptoelectronics0210 nano-technologybusinessTinPlasmonOptics Express
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Emerging blue-UV luminescence in cerium doped YAG nanocrystals

2016

Physica status solidi / Rapid research letters 10(6), 475 - 479(2016). doi:10.1002/pssr.201600041

010302 applied physicsMaterials sciencebusiness.industryDopingchemistry.chemical_elementSynchrotron radiationPhosphor02 engineering and technologyScintillator021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciences530CeriumchemistryNanocrystal0103 physical sciencesOptoelectronicsGeneral Materials Scienceddc:5300210 nano-technologybusinessLuminescence
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High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments

2018

010302 applied physicsMaterials sciencebusiness.industryElectrical engineering02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsSmart instruments01 natural sciencesFlexible electronicsTunnel magnetoresistanceReliability (semiconductor)0103 physical sciencesGeneral Materials Science0210 nano-technologybusinessAdvanced Engineering Materials
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Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

2019

We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…

010302 applied physicsMaterials sciencebusiness.industryGallium nitrideHeterojunction01 natural sciencesSettore ING-INF/01 - ElettronicaElectronic Optical and Magnetic Materialslaw.inventionchemistry.chemical_compoundchemistrylawPhase (matter)0103 physical sciencesElectrodeOptoelectronicsNanorodChemical-bath deposition (CBD) contact injection current spreading length zinc oxide (ZnO) nanorods ZnO/GaN-based light-emitting diodes (LEDs) ZnO/GaN heterostructures.Electrical and Electronic EngineeringbusinessWurtzite crystal structureLight-emitting diodeDiode
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Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors

2019

GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.

010302 applied physicsMaterials sciencebusiness.industryTransistorElectrical breakdownAlgan gan02 engineering and technologyTrappingConverters021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic Materialslaw.inventionDynamic resistancelaw0103 physical sciencesMaterials ChemistryOptoelectronicsElectronicsElectrical and Electronic Engineering0210 nano-technologybusinessSaturation (magnetic)Semiconductor Science and Technology
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Deformation of bubbles in silicon gel insulation under an alternating electric field

2019

The behavior of silicone gel under electrical stress plays a significant role in the reliability and durability of high voltage electronic power devices due to its widespread use for the insulation of IGBT modules and other components. The charges accumulation at the bubble boundaries leads to significant displacements due to the establishment of Coulombic forces and the high deformability of colloidal system. The main purpose of this work is to validate a numerical approach useful to investigate, for a given silicone gel, the non-linear relation between the applied HVDC stress and the electric field over an air bubble within the insulation bulk. The analysis has been carried out by means o…

010302 applied physicsMaterials scienceinsulationreliabilityDeformation (mechanics)020209 energyBubbleHigh voltage02 engineering and technologyDielectric01 natural sciencesSpace chargeIGBTSilicone gelStress (mechanics)chemistry.chemical_compoundpartial dischargeSettore ING-IND/31 - ElettrotecnicaSiliconechemistryElectric field0103 physical sciences0202 electrical engineering electronic engineering information engineeringComposite material
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