Search results for "Engineering and Technology"
showing 10 items of 16184 documents
Finite element analysis of stress concentration between surface coated implants and non surface coated implants - An in vitro study.
2019
Background To determine qualitative comparison in stress distribution between surface coated implants and non surface coated implants using 2 different lengths and vertical, oblique, and lateral forces. Material and Methods 3 dimensional finite element study was carried out at first molar site with 4 surface coated and 4 non surface coated implants using mimic 8.11, solid edge 2004, hypermesh 9.0, and ansys12.1 software. Results The pattern of stress distribution was almost similar between vertical and oblique loading but varied with lateral loads between surface coated and non surface coated implants. As the length of the implants increased stress concentration had no significant variation…
ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
2016
Detecting the UV part of the spectrum is fundamental for a wide range of applications where ZnMgO has the potential to play a central role. The shortest achievable wavelength is a function of the Mg content in the films, which in turn is dependent on the growth technique. Moreover, increasing Mg contents lead to an electrical compensation of the films, which directly affects the responsivity of the photodetectors. In addition, the metal-semiconductor interface and the presence of grain boundaries have a direct impact on the responsivity through different gain mechanisms. In this work, we review the development of ZnMgO UV Schottky photodiodes using molecular beam epitaxy and spray pyrolysis…
Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: effect of thermal annealing
2013
International audience; ZnCdO nanowires with up to 45% Cd are demonstrated showing room temperature photoluminescence (PL) down to 2.02 eV and a radiative efficiency similar to that of ZnO nanowires. Analysis of the microstructure in individual nanowires confirms the presence of a single wurtzite phase even at the highest Cd contents, with a homogeneous distribution of Cd both in the longitudinal and transverse directions. Thermal annealing at 550 C yields an overall improvement of the PL, which is blue-shifted as a result of the homogeneous decrease of Cd throughout the nanowire, but the single wurtzite structure is fully maintained.
Metrological Properties of the Test Setup for Determination Shielding Effectiveness of the Industrial Cable Connectors
2017
Abstract The paper presents results related to assessment of the repeatability and reproducibility of the measurement test setup for determination the relative value of the shielding effectiveness coefficient of the industrial connectors. The construction of the proposed test setup, the measurement method and the procedure for the analysis of measurement results were described. To determine the value of the repeatability and reproducibility coefficient, the two–way analysis of variance was used, which additionally allows for an assessment of the influence of individual sources of variance. The measurements and their analysis were conducted for several frequencies in the range up to 1 GHz. A…
Thermal oxidation of the intermetallic phases Al 8 Mo 3 and AlMo 3
2017
Abstract The thermal oxidation reactions of the intermetallic phases Al8Mo3 and AlMo3 were investigated and analyzed by ex-situ powder-x-ray diffraction (XRD), difference thermal analysis (DTA), thermogravimetry (TGA), and infrared spectroscopy (IR). The initial oxidation reactions in air were found to yield Al2O3 and AlMo3 in the case of Al8Mo3 (Tonset =725 °C), and MoO3 as well as Al8−xMo3 (Tonset =435 °C) for the pure intermetallic phase AlMo3, respectively. Thus, both intermetallic phases are coexisting in an equilibrium within a temperature range of 300 °C under oxidizing conditions. The formation of β-Al2(MoO4)3 followed the second oxidizing process of the respective minority componen…
Controlled thermal oxidation of nanostructured vanadium thin films
2016
Abstract Pure V thin films were dc sputtered with different pressures (0.4 and 0.6 Pa) and particle incident angles α of 0°, 20° and 85°, by using the GLancing Angle Deposition (GLAD) technique. The sputtered films were characterized regarding their electrical resistivity behaviour in atmospheric pressure and in-vacuum conditions as a function of temperature (40–550 °C), in order to control the oxidation process. Aiming at comprehending the oxidation behaviour of the samples, extensive morphological and structural studies were performed on the as-deposited and annealed samples. Main results show that, in opposition to annealing in air, the columnar nanostructures are preserved in vacuum con…
Oxy-nitrides characterization with a new ERD-TOF system
2017
Abstract A new time-of-flight (TOF) camera was installed on Elastic Recoil Detection (ERD) measurement setup on the Tandem Accelerator at Universite de Montreal. The camera consists of two timing detectors, developed and built by the Jyvaskyla group, that use a thin carbon foil and microchannel plates (MCP) to produce the start and stop signals. The position of the first detector is fixed at 18 cm from the target, while the position of the second detector can be varied between 50 and 90 cm from the first detector. This allows to increase time resolution by increasing the distance between the time-of-flight detectors or to increase solid angle by decreasing the distance. Moving the detector …
Contrasting topologies for regular interconnection networks under the constraints of nanoscale silicon technology
2010
Nowadays, system designers have adopted Networks-on-Chip as communication infrastructure of general-purpose tile-based Multi-Processor System-on-Chip (MPSoC). Such decision implies that a certain topology has to be selected to efficiently interconnect many cores on the chip. To ease such a choice, the networking literature offers a plethora of works about topology analysis and characterization for the off-chip domain. However, theoretical parameters and many intuitive assumptions of such off-chip networks do not necessarily hold when a topology is laid out on a 2D silicon surface. This is due to the distinctive features of silicon technology design pitfalls. This work is a first milestone t…
The Effect of the Harmonic Content Generated by AC/DC Modular Multilevel Converters on HVDC Cable Systems
2019
With the increasing penetration of renewable and decentralized energy sources into the power grid, an extended use of DC voltages is expected on both distribution and transmission levels. Generation of DC voltages by means of voltage source converters is associated with a wide spectrum of harmonic distortions at converter terminals, both on the ac and on the dc sides. This can lead to partial discharges in power cables, which deteriorate insulation material thus weakening its performance and reducing cable life-time. In the previously published paper, the effect of harmonic distortion on appearance of partial discharges in cable insulation was evaluated. Here, the study related to the PD be…
Spectroscopic study of the electric field induced valence change of Fe-defect centers in SrTiO(3)
2011
The electrochemical changes induced by an electric field in Fe-doped SrTiO(3) have been investigated by X-ray absorption spectroscopy (XANES and EXAFS), electron paramagnetic resonance (EPR) and Raman spectroscopy. A detailed study of the Fe dopant in the regions around the anode and cathode reveals new insights into the local structure and valence state of Fe in SrTiO(3) single crystals. The ab initio full multiple-scattering XANES calculations give an evidence of the oxygen vacancy presence in the first coordination shell of iron. Differences in the length and disorder of the Fe-O bonds as extracted from EXAFS are correlated to the unequivocal identification of the defect type by compleme…