Search results for "Engineering and Technology"
showing 10 items of 16184 documents
Simulations of the effect of the contact energy levels on a simple model of a hot carrier cell
2016
In the present work, the performance of a simplified model of a hot carrier cell is examined at different energy levels of carrier collection. Incident photons, Monte Carlo generated by employing the ASTM G173-03 data set, are accounted for individually as they interact with the cell. It is assumed that the carriers can be collected ultra-fast, thus avoiding considering hot carrier thermalisation effects. Although the model is preliminary and lacking some mechanisms of hot carrier cells, it has been demonstrated that the present approach to modelling hot carrier solar cells can be developed into fully working models. Some effects of the absorption energy levels in the valence band have been…
Tetrahedral versus octahedral Mn site coordination in wurtzite and rocksalt Zn1−xMnxO investigated by means of XAS experiments under high pressure
2007
Abstract We present the results of x-ray absorption measurements carried out in Zn 1− x Mn x O thin films under high pressure. The Mn environment remains essentially the same for nominal Mn concentrations given by x = 0.05 , 0.1, 0.15 and 0.25. Both the XANES (X-ray Absorption Near Edge Structure) and EXAFS (Extended X-ray Absorption Fine Structure) indicate that Mn occupies the Zn site, being surrounded by four oxygen atoms at 2.02±0.01 A. The substitutional hypothesis is reinforced by comparing the differences between the ambient (wurtzite) and high pressure (rocksalt) spectra, which correspond to tetrahedral and octahedral Mn environments.
Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe
2011
Using synchrotron radiation nanoprobe, this work reports on the elemental distribution in single Inx Ga1–xN nanowires (NWs) grown by molecular beam epitaxy directly on Si(111) substrates. Single NWs dispersed on Al covered sapphire were characterized by nano-X-ray fluorescence, Raman scattering and photoluminescence spectroscopy. Both Ga and In maps reveal an inhomogeneous axial distribution inside sin- gle NWs. The analysis of NWs from the same sample but with different dimensions suggests a decrease of In segregation with the reduction of NW diameter, while Ga distribution seems to remain unaltered. Photoluminescence and Raman scattering measurements carried out on ensembles of NWs exhibi…
Composition dependence ofSi1−xGexsputter yield
2005
Sputtering yields have been measured for unstrained ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ $(x=0--1)$ alloys when bombarded with ${\mathrm{Ar}}^{+}$ ions within the linear cascade regime. Nonlinear S-shape dependence of the sputter yield as a function of the alloy composition has been revealed. The dependence is analyzed within the frameworks of the cascade theory conventionally accepted to be the most systematic to date theoretical approach in sputtering. In view of a linear composition dependence predicted for the sputter yield by the cascade theory adapted for polyatomic substrates, the nonlinearity observed in our experiments is shown to be related to the alloying effect on…
Atomic layer deposition of aluminum oxide on modified steel substrates
2016
Abstract Al 2 O 3 thin films were grown by atomic layer deposition to thicknesses ranging from 10 to 90 nm on flexible steel substrates at 300 °C using Al(CH 3 ) 3 and H 2 O as precursors. The films grown to thicknesses 9–90 nm covered the rough steel surfaces uniformly, allowing reliable evaluation of their dielectric permittivity and electrical current densities with appreciable contact yield. Mechanical behavior of the coatings was evaluated by nanoindentation. The maximum hardness values of the Al 2 O 3 films on steel reached 12 GPa and the elastic modulus exceeded 280 GPa.
Normal and relaxor ferroelectric behavior in the Ba1−xPbx(Ti1−yZry)O3 solid solutions
2017
Abstract Polycrystalline samples of Ba 1−x Pb x (Ti 1−y Zr y )O 3 (BPTZ) with x = 0.025 & 0.1 and 0.10 ≤ y ≤ 0.50 have been synthesized by high-temperature solid-state reaction technique. X-ray diffraction reveals the formation of single phase with tetragonal or cubic structure. Dielectric investigations were carried out in the temperature range from 80 to 445 K with frequencies range from 10 2 to 10 6 Hz. A broad dielectric anomaly coupled with the shift of dielectric maxima toward a higher temperature with increasing frequency indicates either a diffuse phase transition or relaxor behavior in some of these ceramics. Whatever lead content, when zirconium is substituted by titanium, T C an…
Real-time signal processing in embedded systems
2016
International audience
Spark Plasma Sintering of Metallic Glasses
2019
Spark plasma sintering (SPS) of metallic glasses (MG) can be quite different from sintering crystalline metallic alloys. Indeed, MG behave differently with increasing temperature, as they encounter a glass transition and devitrification. Their shaping can thus be compared to what can be performed on thermoplastic polymers. SPS is a promising way to prepare bulk parts from amorphous powders, since it allows very fast heating and cooling rates. It gives an advantage to avoid or limit devitrification of the amorphous phase upon the thermal cycle. However, diffusion mechanisms, which generally control densification, are activated at temperatures that are not compatible with MG structural integr…
Production of dense nanostructured materials using FAPAS and SPS techniques
2011
International audience
Run-time scalable NoC for FPGA based virtualized IPs
2017
The integration of virtualized FPGA-based hardware accelerators in a cloud computing is progressing from time to time. As the FPGA has limited resources, the dynamic partial reconfiguration capability of the FPGA is considered to share resources among different virtualized IPs during runtime. On the other hand, the NoC is a promising solution for communication among virtualized FPGA-based IPs. However, not all the virtualized regions of the FPGA will be active all the time. When there is no demand for virtualized IPs, the virtualized regions are loaded with blank bitstreams to save power. However, keeping active the idle components of the NoC connecting with the idle virtualized regions is …