Search results for "Epitaxy"
showing 10 items of 287 documents
Tunneling into epitaxial UPd2Al3 thin films
1999
Abstract UPd2Al3–AlOx–Pb Giaever-type tunneling junctions were prepared employing an in vacuo process. The high junction quality is evident by the observation of the well-known superconducting density of states of the Pb counter electrode. For HPbc2
Proximity Effects on the Charge Density Wave Order and Superconductivity in Single-Layer NbSe2
2021
Collective electronic states such as the charge density wave (CDW) order and superconductivity (SC) respond sensitively to external perturbations. Such sensitivity is dramatically enhanced in two dimensions (2D), where 2D materials hosting such electronic states are largely exposed to the environment. In this regard, the ineludible presence of supporting substrates triggers various proximity effects on 2D materials that may ultimately compromise the stability and properties of the electronic ground state. In this work, we investigate the impact of proximity effects on the CDW and superconducting states in single-layer (SL) NbSe2 on four substrates of diverse nature, namely, bilayer graphene…
Resistivity and irreversibility line of (Hg0.9Re0.1)Ba2CaCu2O6+δ HTS thin films
2003
Abstract High-quality epitaxial (Hg 0.9 Re 0.1 )Ba 2 CaCu 2 O 6+ δ HTS thin films were successfully prepared by pulsed laser deposition (PLD) of Hg-free precursor material on (1 0 0)-oriented SrTiO 3 substrates with subsequent Hg vapour annealing. (Hg 0.9 Re 0.1 )Ba 2 CaCu 2 O 6+ δ HTS thin films exhibit sharp superconducting transitions at T c ≈122 K. The electrical resistance for c -axis oriented HgRe-1212 films has been studied as a function of temperature and dc magnetic fields up to 10 T parallel to the crystallographic c -axis. The irreversibility line for the HgRe-1212 has been deduced from the data and investigated as a function of reduced temperature T / T c . The result of the irr…
Interface transparency and proximity effect in Nb/Cu triple layers realized by sputtering and molecular beam epitaxy
2004
We have investigated, in the framework of the proximity effect theory, the interface transparency T between Nb and Cu in the case of high quality Nb/Cu trilayers fabricated by molecular beam epitaxy (MBE) and sputtering deposition techniques. The obtained T values do not seem to be strongly influenced by the fabrication methods but more by the intrinsic properties of the two metals; a slightly higher value for T has even been deduced for the MBE prepared samples. The proximity effect in these samples has also been studied in the presence of an external magnetic field. In the parallel configuration a significant shift towards lower values of the 2D–3D crossover temperature has been observed …
Influence of micro-structure in the low temperature critical currents of YBa2Cu3O7?? thin films
1996
Epitaxial YBa2Cu3O7−δ films nucleate in c-axis oriented single-crystalline islands. The surface of the single-crystalline SrTiO3 substrates exhibit steps of one third of the YBa2Cu3O7−δ c-axis. These steps generate a mismatch in the island boundaries between the CuO2 superconducting blocks. We show that these defect regions are strong candidates for being the pinning centers responsible for the large critical currents observed in Laser Ablated and Sputtered thin films.
Preparation of thin films of the heavy fermion superconductor UNi2Al3
2004
Abstract Thin films of the heavy fermion superconductor UNi 2 Al 3 were prepared by coevaporation of the elementary components in an MBE-system. We obtained textured (1 0 0)-oriented films of this hexagonal compound depositing on Al 2 O 3 substrates. Epitaxial growth was observed on (1 1 2)-oriented orthorhombical YAlO 3 substrates. However, due to pronounced strain the UNi 2 Al 3 (1 0 0)-axis is shortened by ≈2%. No superconductivity of the films was observed which can be associated with the high impurity concentration deduced from R ( T ) and XRD investigations.
Relation between microstructure and transport properties of epitaxial YBa2Cu3O7-d thin films.
1997
Abstract In order to understand the origin of the high critical current densities observed in thin superconducting films compared to single crystals we measured in several epitaxial YBa 2 Cu 3 O 7−δ thin films the magnetic field and temperature dependence of the superconducting current density j s and the dynamical relaxation rate Q ≡ d ln j s / d ln( d B/ dt ). For all samples we found that (i) the superconducting current density j s is independent of magnetic field up to a certain field B Φ . The value of this field, which is sample dependent, decreases with increasing temperature; (ii) for fields B>B Φ , the superconducting current density falls off as B −1/2 over several decades; (iii) …
Investigation of the epitaxy of thin YBa2Cu3O7-delta films
1990
Abstract The degree of epitaxy of thin sputtered and laser ablated films have been investigated by Raman spectroscopy. Using the selection rules for Raman scattering for the different phonons in YBa 2 Cu 3 O 7−δ the superconducting films on SrTiO 3 and MgO are found to be epitaxially grown with the c -axis perpendicular to the substrate. On ZrO 2 the films also grow with their c -axis perpendicular to the substrate, but with randomly oriented a / b -directions in the plane of the film.
Superconductivity in high‐quality (Hg 0.9 Re 0.1 )Ba 2 CaCu 2 O 6+ δ HTSC thin films
2004
High-quality epitaxial (Hg0.9Re0.1)Ba2CaCu2O6+δ (HgRe-1212) HTS thin films were successfully prepared using pulsed laser deposition (PLD) of the Re0.1Ba2CaCu2O6+δ precursor and subsequent Hg vapor annealing. The thin films exhibit a sharp superconducting transition at Tc ≈ 120 K. The resistive transitions have been investigated in magnetic fields up to 6 T parallel and perpendicular to the c-axis. We have determined the activation energy of thermally activated flux-motion for both magnetic field orientations. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
2006
We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.