Search results for "Epitaxy"
showing 7 items of 287 documents
Influence of a hydrophilic spacer on the structure of a phospholipid monolayer
1994
We present the results of thermodynamical and X-ray grazing incidence diffraction experiments performed on Langmuir monolayers of ether lipids with hydrophilic spacers between the glycerol backbone and the phosphatidylcholine head group: DHPC, DH-E01-PC, and DH-E02-PC. As a spacer the oxy-ethylene group is used, which is a typical hydrophilic unit of non-ionic tensides. It turns out that the introduction of the hydrophilic spacers leads to a fluidization of the monolayer and reduces the tilt angle of the chains.
X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC.
2009
By means of x-ray absorption near-edge structure (XANES) several Ga(1-x)Mn(x)N (0.03x0.09) layers have been analyzed. The Mn-doped GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien…
Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process
2016
A new chemistry has been developed to deposit GaAs, the quintessential compound semiconductor. The ALD process is based on a dechlorosilylation reaction between GaCl3 and (Et3Si)3As. Characteristic ALD growth was demonstrated, indicating good applicability of the alkylsilyl arsenide precursor. ALD of GaAs produced uniform, amorphous and stoichiometric films with low impurity content. This was done with saturating growth rates and an easily controlled film thickness. Crystallization was achieved by annealing. Even though the growth rate strongly decreased with increasing deposition temperature, good quality film growth was demonstrated at 175 to 200 °C, indicating the presence of an ALD wind…
Structure and optical properties of a monolayer single crystal of a cyanine dye
1992
Abstract Molecularly thin single crystals of a cyanine dye prepared by adsorption at a charged surfactant monolayer are studied by polarized optical spectroscopy and electron diffraction. Both techniques independently show a herringbone arrangement of the dye with the long axes of translationally inequivalent molecules forming an angle of 80°. The dye arranges in a primitive rectangular unit cell (a=21.2 A, b=6.14 A) adjacent to an epitaxially related hexagonal cell of the aliphatic tails of the surfactant.
Structural and optical characterization of ZnS ultrathin films prepared by low-temperature ALD from diethylzinc and 1.5-pentanedithiol after various …
2019
The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant S excess. After annealing, the stoichiometry improved for annealing temperatures &ge
Review article: recommended reading list of early publications on atomic layer deposition - outcome of the "virtual Project on the History of ALD"
2017
Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual proj…
Bi-2212 and Y123 highly curved single-crystal-like objects: whiskers, bows and ring-like structures
2012
High-temperature superconducting objects of Bi2Sr2CaCu2O8 and Y Ba2Cu3O7 highly curved in the ab-plane, such as curved/kinked whiskers, bows and ring-like structures, were obtained within a solid?liquid?solid (SLS) grass-like growth mechanism. As-grown objects are crystals with three-dimensional epitaxy similar to conventional single crystals: they can be viewed as crystal parts ?cut? from a conventional rectangular crystal. Between our curved objects and conventional crystals, whiskers or thin films there are some differences in the superconducting properties induced only by the shape factors and no new physics is observed. Some details of the growth mechanism are discussed, emphasizing cu…