Search results for "Epitaxy"
showing 10 items of 287 documents
Morphology transitions in ZnO nanorods grown by MOCVD
2012
Morphology transitions (nanorods–nanowalls and nanorods–nanotubes-layer) were induced in the growth of ZnO nanostructures by metal organic chemical vapor deposition (MOCVD) on c-sapphire, using helium as carrier gas, and dimethylzinc–triethylamine and nitrous oxide as zinc and oxygen sources, respectively. A systematic study of the influence of the VI/II ratio and precursor flow-rates on the morphology of ZnO nanorod arrays has been carried out, taking advantage of the ability of MOCVD to individually control the precursor partial pressures. Growth mechanisms are discussed to understand the evolution of the nanostructures morphology for different growth conditions. In particular, the influe…
Morphology and electronic structure of bcc Co(110) and fcc/hcp Co(111) on Fe(110) investigated by STM and STS
2009
Abstract We report on the growth of ultrathin epitaxial Co films on Fe(1 1 0) examined by scanning tunneling microscopy and spectroscopy (STM and STS). At room temperature Co forms pseudomorphic, ideally ordered body-centered cubic (bcc) layers for the first two monolayers as confirmed by atomically resolved STM images. This is in contrast to the related case of Co/Cr(1 1 0) where a superstructure occurs in the second layer. The third monolayer forms a close-packed structure and causes a transformation of the buried second monolayer into a close-packed structure. The Fe(1 1 0) substrate strongly influences the electronic structure of the first Co monolayer as concluded from the dI / dU spec…
Towards a full Heusler alloy showing room temperature half-metallicity at the surface
2007
In this article we investigate the surface spin polarization in a 100 nm Co2Cr0.6Fe0.4Al (CCFA) film grown ex situ epitaxially on MgO(100) with a 10 nm Fe buffer layer by means of spin resolved photoemission. We show that a careful in situ preparation of the sample surface leads to values for the room temperature spin polarization up to 45% at the Fermi level. To our knowledge, this is the highest value measured so far at the surface region of a full Heusler alloy at room temperature.
Growth, domain structure, and atomic adsorption sites of hBN on the Ni(111) surface
2021
One of the most important functionalities of the atomically thin insulator hexagonal boron nitride (hBN) is its ability to chemically and electronically decouple functional materials from highly reactive surfaces. It is therefore of utmost importance to uncover its structural properties on surfaces on an atomic and mesoscopic length scale. In this paper, we quantify the relative coverages of structurally different domains of a hBN layer on the Ni(111) surface using low-energy electron microscopy and the normal incidence x-ray standing wave technique. We find that hBN nucleates on defect sites of the Ni(111) surface and predominantly grows in two epitaxial domains that are rotated by ${60}^{…
Epitaxial growth of molybdenum on TiO2(110)
2003
Abstract Molybdenum was deposited on blue (i.e. non-stoichiometric) TiO2(1 1 0) surface using a very low deposition rate (less than 0.05 eqML min−1). The resulting deposit was investigated by means of X-ray photoelectron diffraction (XPD), LEED and XPS. Just after deposition, the film is mainly constituted of metallic molybdenum, contains oxygen homogeneously dispersed through the whole deposit and the broad features detected in XPD scans are interpreted as a coarse epitaxy between TiO2(1 1 0) surface and the (0 0 1) face of bcc molybdenum. The orientation relationship is: Mo(1 0 0)[0 0 1]//TiO2(1 1 0)[0 0 1]. After annealing the deposit at 673 K, XPD scans become sharper and epitaxy is ach…
Effect of kinks and concerted diffusion mechanisms on mass transport and growth on stepped metal surfaces
1997
Abstract We study the effect of kinks and concerted atomic mechanisms on diffusion processes relevant to metal-on-metal homoepitaxy on fcc metal surfaces vicinal to the fcc (100) direction. First, we carry out extensive finite-temperature molecular dynamics simulations based on the effective medium theory to search for diffusion mechanisms that dominate the mass transport perpendicular and parallel to step edges. Then, the energetics of these processes are studied by ground state calculations. Our results show that kinks play an important role for diffusion both across and along step edges. In particular, the combined effect of kinks and concerted exchange is found to be able to remove loca…
The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes.
2021
Abstract The spontaneous growth of GaN nanowires (NWs) in absence of catalyst is controlled by the Ga flux impinging both directly on the top and on the side walls and diffusing to the top. The presence of diffusion barriers on the top surface and at the frontier between the top and the sidewalls, however, causes an inhomogeneous distribution of Ga adatoms at the NW top surface resulting in a GaN accumulation in its periphery. The increased nucleation rate in the periphery promotes the spontaneous formation of superlattices in InGaN and AlGaN NWs. In the case of AlN NWs, the presence of Mg can enhance the otherwise short Al diffusion length along the sidewalls inducing the formation of AlN …
Full Tunability of Strain along the fcc-bcc Bain Path in Epitaxial Films and Consequences for Magnetic Properties
2009
Strained coherent film growth is commonly either limited to ultrathin films or low strains. Here, we present an approach to achieve high strains in thicker films, by using materials with inherent structural instabilities. As an example, 50 nm thick epitaxial films of the ${\mathrm{Fe}}_{70}{\mathrm{Pd}}_{30}$ magnetic shape memory alloy are examined. Strained coherent growth on various substrates allows us to adjust the tetragonal distortion from $c/{a}_{\mathrm{bct}}=1.09$ to 1.39, covering most of the Bain transformation path from fcc to bcc crystal structure. Magnetometry and x-ray circular dichroism measurements show that the Curie temperature, orbital magnetic moment, and magnetocrysta…
Magnetoresistivity and crystal structure of epitaxial La0.67Ca0.33MnO3 films
1998
Abstract We investigated thin-film growth of doped manganites by sputter deposition on SrTiO 3 (1 0 0), MgO (1 0 0) and r -plane Al 2 O 3 (1 0 1¯2) substrates and found an in-plane-oriented growth. The unit cell of the films showed distortions from the simple cubic perovskite structure, represented by a tetragonal unit cell with a′ = b′ = √2 a ; c′ = 2 a . By scanning electron microscopy we investigated the growth morphology of the films. We determined the magnetotransport properties above and below room temperature. Transport at high temperatures is best described by polaron hopping.
Chalcopyrite Semiconductors for Quantum Well Solar Cells
2011
We explore here the possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se2 in a quantum well solar cell structure. Thin alternating layers of 50 nm CuInSe2 and CuGaSe2 were grown epitaxially on a GaAs(100) substrate employing metalorganic vapor phase epitaxy. The optical properties of a resulting structure of three layers were investigated by photoluminescence and photoreflectance, indicating charge carrier confinement ∗To whom correspondence should be addressed †Helmholtz-Zentrum Berlin ‡Universidad Politecnica de Madrid ¶University of Illinois §University of Jyvaskyla ‖Current address: Universitat des Saarlandes, Uni Campus, Gebaude A5.1, 66123 Saarbr…