Search results for "Excimer laser"
showing 10 items of 31 documents
UV and vacuum-UV properties of ge related centers in gamma irradiated silica
2002
Photochemical inhomogeneity in the reduction process of the optical activity related to Ge oxygen deficient point defects in silica, characterized by an absorption band centered at 5.15 v eV and two emission bands centered at 3.2 v eV and 4.3 v eV, have been investigated. We have made a comparative study of the stationary and time dependent photoluminescence under excitation in the UV (5 v eV) and in the vacuum-UV (7.4 v eV) ranges in natural silica samples with native and with n -irradiation bleached optical activity. Our measurements evidence that the same spectral features are observed in the native and in the irradiated samples, but for an intensity reduction in the irradiated ones. Mor…
Luminescence of dense, octahedral structured crystalline silicon dioxide (stishovite)
2011
Abstract It is obtained that, as grown, non-irradiated stishovite single crystals possess a luminescence center. Three excimer pulsed lasers (KrF, 248 nm; ArF, 193 nm; F 2 , 157 nm) were used for photoluminescence (PL) excitation. Two PL bands were observed. One, in UV range with the maximum at 4.7±0.1 eV with FWHM equal to 0.95±0.1 eV, mainly is seen under ArF laser. Another, in blue range with the maximum at 3±0.2 eV with FWHM equal to 0.8±0.2 eV, is seen under all three lasers. The UV band main fast component of decay is with time constant τ =1.2±0.1 ns for the range of temperatures 16–150 K. The blue band decay possesses fast and slow components. The fast component of the blue band deca…
Peculiarities of photoluminescence excited by 157nm wavelength F2 excimer laser in fused and unfused silicon dioxide
2009
Abstract Photoluminescence (PL) spectra and kinetics of high purity amorphous silicon dioxide with ultra low hydroxyl content is studied under the excitation by F 2 excimer laser (157 nm wavelength) pulses. Materials synthesized in the SPCVD plasma chemical process are studied before and after fusion. Two bands are found in the PL spectra: one centered at 2.6–2.9 eV (a blue band) and the other at 4.4 eV (a UV band). Luminescence intensity of unfused material is found to increase significantly with exposure time starting from a very small level, whereas in fused counterpart it does not depend on irradiation time. Both bands show complicated decay kinetics, to which add exponential and hyperb…
Sub-band-gap-excited luminescence of localized states in SiO2–Si and SiO2–Al glasses
2010
Abstract Silica glass samples doped with extra silicon (SiO 2 –Si: artificial oxygen deficiency) and with aluminum (SiO 2 –Al: Al-doped without accompanying alkali ions) were studied. The luminescence properties of these two samples are compared in the range of temperature 15–290 K under excitation of ArF excimer laser (193 nm). In both samples the luminescence of oxygen deficient centers (ODCs) is detected, i.e., emission bands in the blue at 440 nm and the UV at 280 nm. Cooling of the both samples led to strong increases of luminescence intensity down to 80 K with much smaller increases for still lower temperatures. At 290 K in SiO 2 –Si a luminescence similar to that of twofold-coordinat…
Impact of fluorine admixture, hydrogen loading, and exposure to ArF excimer laser on photoluminescence of bismuth defects in amorphous silica
2013
Abstract Photoluminescence (PL) excited by ArF (193 nm), KrF (248 nm) and N 2 (337 nm) pulsed lasers is studied in bismuth doped unfused silicon dioxide synthesized on silica substrates by surface-plasma chemical vapor deposition (SPCVD). Additive free and fluorinated (F content ~ 0.4 wt.%) amorphous silica are examined as host materials for bismuth. Three typical PL bands peaking at wavelengths of 650 nm (orange), 800 nm and 1400 nm (near infrared, NIR) were observed. It is found that fluorine additive weakly affects PL detail of as deposited samples. However, hydrogen loading completely deactivates NIR PL in the case of fluorine free sample, but only slightly suppresses the NIR band in fl…
Observation of two-XUV-photon ionization using harmonic generation from a short, intense laser pulse
1996
We report the observation of a two-photon ionization process in the XUV wavelength regime. In a near-resonant 1 + 1 ionization scheme, Ar atoms are ionized absorbing the 15 eV third harmonic photons produced in a gas jet by the 0.5 ps intense laser pulses of a KrF excimer laser emitting at 248.6 nm. The present demonstration of a non-linear process in the XUV regime reveals feasibility of high-intensity applications utilizing the uniquely high peak power of non-conventional short wavelength radiation sources based on harmonic generation.
Implantable collamer lens and femtosecond laser for myopia: comparison using an adaptive optics visual simulator.
2014
Purpose: To compare optical and visual quality of implantable collamer lens (ICL) implantation and femtosecond laser in situ keratomileusis (F-LASIK) for myopia. Methods: The CRX1 adaptive optics visual simulator (Imagine Eyes, Orsay, France) was used to simulate the wavefront aberration pattern after the two surgical procedures for -3-diopter (D) and -6-D myopia. Visual acuity at different contrasts and contrast sensitivities at 10, 20, and 25 cycles/degree (cpd) were measured for 3-mm and 5-mm pupils. The modulation transfer function (MTF) and point spread function (PSF) were calculated for 5-mm pupils. Results: F-LASIK MTF was worse than ICL MTF, which was close to diffraction-limited MT…
γ-ray induced GeODC(II) centers in germanium doped α-quartz crystal
2011
International audience; Main luminescence of α-quartz crystal doped with germanium results from the luminescence of a self-trapped exciton (STE) near germanium. In as grown Ge-doped α-quartz crystal, the luminescence associated with the twofold coordinated Ge center (GeODC) in amorphous silica glass doped with germanium, was never observed. In this work, we performed experiments to investigate if a GeODC like luminescence could appear after a γ-irradiation of a Ge-doped α-quartz crystal. The answer is positive: under excitation with pulsed light of an ArF laser (193 nm): a new luminescence with two bands -- a blue one associated to a time constant of about 100 μs appears and another one wit…
Vibrational population of H 2 + after electroionization of thermal H2
1993
In an ion trap experiment we have determined the vibrational population of the lowest 9 vibrational levels of H2+. We used photodissociation of the trapped molecules by 248 nm light from an excimer laser and the dependence of the photodissociation cross section from the vibrational state. Our results are in good agreement to calculations, which are based on the Franck-Condon principle, but include a variation of the internuclear distance in the transition matrix element.
Optical Absorption of Excimer Laser‐Induced Dichlorine Monoxide in Silica Glass and Excitation of Singlet Oxygen Luminescence by Energy Transfer from…
2021
An optical absorption (OA) band of interstitial dichlorine monoxide molecules with peak at 4.7 eV and halfwidth 0.94 eV is identified in F2 laser - irradiated (photon energy=7.9 eV) synthetic silica glass bearing both interstitial O2 and Cl2 molecules. Alongside with intrinsic defects, this OA band can contribute to solarization of silica glasses produced from SiCl4. While the formation of ClClO is confirmed by its Raman signature, its structural isomer ClOCl may also contribute to this induced OA band. Thermal destruction of this band between 300C and 400C almost completely restores the pre-irradiation concentration of interstitial Cl2. An additional weak OA band at 3.5 eV is tentatively a…