Search results for "Excimer"
showing 10 items of 82 documents
Ultraviolet-induced paramagnetic centers and absorption changes in singlemode Ge-doped optical fibers
2009
We investigated the laser-energy-density dependence of absorption changes and paramagnetic centers induced by a cw Ar+ laser operating at 5.1 eV, in both unloaded and H-2-loaded single mode Ge-doped optical fibers. The induced absorption is measured in the blue and near ultraviolet spectral range by using the 3.1 eV photoluminescence, ascribed to Ge lone pair center (GLPC), as an in situ probe source. We find that the Ge (1) center (GeO4-) is induced upon UV exposure by electron trapping on GeO4 precursors, where the free electrons are most likely produced by ionization of GLPC. Ge (1) is responsible of optical transmission loss of the fiber in the investigated range. Hydrogen loading stron…
Photochemical formation of [4.4.4](1,3,5)cyclophanes from 1,3,5-tris(3-phenylpropenoyl)benzenes
2004
Abstract Irradiation of 1,3,5-tris(3-phenylpropenoyl)benzene ( 1a ) yields in solution a dimer 2a by a threefold head-to-head/anti [2π+2π]cycloaddition. The stereochemistry of this [4.4.4](1,3,5)cyclophane was determined by 1H and 13C NMR studies including NOE measurements and a calculation of the AA′MM′ spin pattern of the methine protons. In contrast to the solution photochemistry, which is presumably controlled by the arrangement of an excimer, the irradiation in the crystalline state leads by a topochemical control to a dimer 3a , which contains a single four-membered ring.
Luminescence of dense, octahedral structured crystalline silicon dioxide (stishovite)
2011
Abstract It is obtained that, as grown, non-irradiated stishovite single crystals possess a luminescence center. Three excimer pulsed lasers (KrF, 248 nm; ArF, 193 nm; F 2 , 157 nm) were used for photoluminescence (PL) excitation. Two PL bands were observed. One, in UV range with the maximum at 4.7±0.1 eV with FWHM equal to 0.95±0.1 eV, mainly is seen under ArF laser. Another, in blue range with the maximum at 3±0.2 eV with FWHM equal to 0.8±0.2 eV, is seen under all three lasers. The UV band main fast component of decay is with time constant τ =1.2±0.1 ns for the range of temperatures 16–150 K. The blue band decay possesses fast and slow components. The fast component of the blue band deca…
Peculiarities of photoluminescence excited by 157nm wavelength F2 excimer laser in fused and unfused silicon dioxide
2009
Abstract Photoluminescence (PL) spectra and kinetics of high purity amorphous silicon dioxide with ultra low hydroxyl content is studied under the excitation by F 2 excimer laser (157 nm wavelength) pulses. Materials synthesized in the SPCVD plasma chemical process are studied before and after fusion. Two bands are found in the PL spectra: one centered at 2.6–2.9 eV (a blue band) and the other at 4.4 eV (a UV band). Luminescence intensity of unfused material is found to increase significantly with exposure time starting from a very small level, whereas in fused counterpart it does not depend on irradiation time. Both bands show complicated decay kinetics, to which add exponential and hyperb…
Sub-band-gap-excited luminescence of localized states in SiO2–Si and SiO2–Al glasses
2010
Abstract Silica glass samples doped with extra silicon (SiO 2 –Si: artificial oxygen deficiency) and with aluminum (SiO 2 –Al: Al-doped without accompanying alkali ions) were studied. The luminescence properties of these two samples are compared in the range of temperature 15–290 K under excitation of ArF excimer laser (193 nm). In both samples the luminescence of oxygen deficient centers (ODCs) is detected, i.e., emission bands in the blue at 440 nm and the UV at 280 nm. Cooling of the both samples led to strong increases of luminescence intensity down to 80 K with much smaller increases for still lower temperatures. At 290 K in SiO 2 –Si a luminescence similar to that of twofold-coordinat…
Impact of fluorine admixture, hydrogen loading, and exposure to ArF excimer laser on photoluminescence of bismuth defects in amorphous silica
2013
Abstract Photoluminescence (PL) excited by ArF (193 nm), KrF (248 nm) and N 2 (337 nm) pulsed lasers is studied in bismuth doped unfused silicon dioxide synthesized on silica substrates by surface-plasma chemical vapor deposition (SPCVD). Additive free and fluorinated (F content ~ 0.4 wt.%) amorphous silica are examined as host materials for bismuth. Three typical PL bands peaking at wavelengths of 650 nm (orange), 800 nm and 1400 nm (near infrared, NIR) were observed. It is found that fluorine additive weakly affects PL detail of as deposited samples. However, hydrogen loading completely deactivates NIR PL in the case of fluorine free sample, but only slightly suppresses the NIR band in fl…
Observation of two-XUV-photon ionization using harmonic generation from a short, intense laser pulse
1996
We report the observation of a two-photon ionization process in the XUV wavelength regime. In a near-resonant 1 + 1 ionization scheme, Ar atoms are ionized absorbing the 15 eV third harmonic photons produced in a gas jet by the 0.5 ps intense laser pulses of a KrF excimer laser emitting at 248.6 nm. The present demonstration of a non-linear process in the XUV regime reveals feasibility of high-intensity applications utilizing the uniquely high peak power of non-conventional short wavelength radiation sources based on harmonic generation.
Dynamical Casimir-Polder energy between an excited- and a ground-state atom.
2004
We consider the Casimir-Polder interaction between two atoms, one in the ground state and the other in its excited state. The interaction is time-dependent for this system, because of the dynamical self-dressing and the spontaneous decay of the excited atom. We calculate the dynamical Casimir-Polder potential between the two atoms using an effective Hamiltonian approach. The results obtained and their physical meaning are discussed and compared with previous results based on a time-independent approach which uses a non-normalizable dressed state for the excited atom.
Implantable collamer lens and femtosecond laser for myopia: comparison using an adaptive optics visual simulator.
2014
Purpose: To compare optical and visual quality of implantable collamer lens (ICL) implantation and femtosecond laser in situ keratomileusis (F-LASIK) for myopia. Methods: The CRX1 adaptive optics visual simulator (Imagine Eyes, Orsay, France) was used to simulate the wavefront aberration pattern after the two surgical procedures for -3-diopter (D) and -6-D myopia. Visual acuity at different contrasts and contrast sensitivities at 10, 20, and 25 cycles/degree (cpd) were measured for 3-mm and 5-mm pupils. The modulation transfer function (MTF) and point spread function (PSF) were calculated for 5-mm pupils. Results: F-LASIK MTF was worse than ICL MTF, which was close to diffraction-limited MT…
Polyamines containing naphthyl groups as pH-regulated molecular machines driven by light
2001
A series of compounds made up by linking methylnaphthalene fragments at both ends of different polyamine chains have shown to behave as pH-regulated molecular machines driven by light and fluorescence emission studies have proved the formation of an excimer between the two naphthalene units whose appearance, fluorescence intensity and decay times depend on the pH value of the media. Albelda Gimeno, Maria Teresa, Teresa.Albelda@uv.es ; Garcia-España Monsonis, Enrique, Enrique.Garcia-Es@uv.es ; Soriano Soto, Concepción, Concepcion.Soriano@uv.es