Search results for "Field-effect transistor"
showing 10 items of 59 documents
Measuring charge based quantum bits by a superconducting single-electron transistor
2002
Single-electron transistors have been proposed to be used as a read-out device for Cooper pair charge qubits. Here we show that a coupled superconducting transistor at a threshold voltage is much more effective in measuring the state of a qubit than a normal-metal transistor at the same voltage range. The effect of the superconducting gap is to completely block the current through the transistor when the qubit is in the logical state 1, compared to the mere diminishment of the current in the normal-metal case. The time evolution of the system is solved when the measuring device is driven out of equilibrium and the setting is analysed numerically for parameters accessible by lithographic alu…
DEPFET Macropixel Detectors for MIXS: First Electrical Qualification Measurements
2010
The Mercury Imaging X-ray Spectrometer (MIXS) is one of the instruments on board the Mercury Planetary Orbiter of the fifth European Space Agency (ESA) cornerstone mission BepiColombo. This spectrometer comprises two instruments and allows imaging X-ray spectroscopy of the Mercurian surface. The focal plane arrays for the energy and spatial resolved detection of X-rays are based on depleted P-channel FET (DEPFET) macropixel detectors. We report on the first electrical qualification measurements of DEPFET macropixel flight hardware, which are done at room temperature. The measurement of the transistor properties of all DEPFET pixels allows the selection of 100% electrically defect-free devic…
Belle II pixel detector: Performance of final DEPFET modules
2020
Belle-II DEPFET and PXD Collaboration: et al.
Commissioning and performance of the Belle II pixel detector
2021
Belle-II DEPFET and PXD Collaboration: et al.
The optical blocking filter for the ATHENA wide field imager: Ongoing activities towards the conceptual design
2015
ATHENA is the L2 mission selected by ESA to pursue the science theme "Hot and Energetic Universe" (launch scheduled in 2028). One of the key instruments of ATHENA is the Wide Field Imager (WFI) which will provide imaging in the 0.1-15 keV band over a 40'x40' large field of view, together with spectrally and time-resolved photon counting. The WFI camera, based on arrays of DEPFET active pixel sensors, is also sensitive to UV/Vis photons. Optically generated electron-hole pairs may degrade the spectral resolution as well as change the energy scale by introducing a signal offset. For this reason, the use of an X-ray transparent optical blocking filter is needed to allow the observation of all …
Photoelectrochemical Synthesis of Polypyrrole on Anodic Ta2O5 Films
2007
Polypyrrole film was photoelectrochemically grown on insulating Ta2O5 anodic film in acetonitrile solution. A characterization by photocurrent spectroscopy PCS of metal/oxide/polypyrrole interface was carried out. The PCS results suggest that a metallic-like PPy is formed under illumination at constant anodic potential. By polarizing the polypyrrole at cathodic potentials a photocurrent spectrum typical of p-type semiconducting film was recorded. A scanning electron microscopy study of PPy surfaces solution side and oxide side allowed us to obtain information on the morphology of the polymer as well as a rough estimate of the film thickness and of the diameter of PPy globules at the two int…
Investigation on Cascode Devices for High Frequency Electrical Drives Applications
2019
In the last years a widespread development in the market of electrical drives employing high-speed electrical machines has occurred in various industrial fields, due to the extremely high power density that can be reached. Nevertheless, to maintain output power quality without using bulky filtering networks, DC-AC converters should be controlled by means of higher PWM switching frequencies. New switching device technologies, such as Field Effect Transistors based on SiC and GaN, are therefore gathering momentum in order to comply with the higher working frequencies. To operate under high frequencies and at the same time at high voltage levels, alternative circuital configurations for switch…
Josephson junctions and superconducting field effect transistors based on epitaxial Bi2Sr2Can-1CunO2(n+2) thin films
1998
Abstract Josephson junctions based on thin films of the Bi2Sr2Ca2Cu3O10+δ compound show IcRn products compatible with YBa2Cu3O7−δ samples. Using quasiparticle tunneling experiments we found evidence for a superconductor–insulator–superconductor tunneling process via localized states in the barrier. The Bi2Sr2CaCu2O8+δ compound is investigated regarding possible applications in superconducting field effect devices. We present thin films of four unit cells thickness that are superconducting at 58 K. An inverted metal–insulator–superconductor structure was prepared. From the modulation of the normal state resistance we estimate a carrier density of 7×1019 cm−3 for a superconducting sample. The…
Layout influence on microwave performance of graphene field effect transistors
2018
The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S -parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gate-length space which maximises the microwave performance.
Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study
2019
In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al$_{2}$O$_{3}$), titanium oxide (TiO$_{2}$), and hafnium oxide (HfO$_{2}$) have been tested. GFETs have been fabricated on a single chip and a statistical analysis has been performed on a set of 24 devices for each type of oxide. Direct current and microwave measurements have been carried out on such GFETs and short circuit current gain and maximum available gain have been chosen as quality factors to evaluate their microwave performance. Our results show that all of the devices belonging …