Search results for "Films"
showing 10 items of 2839 documents
Fabrication and characterization of low cost Cu 2 O/ZnO:Al solar cells for sustainable photovoltaics with earth abundant materials
2016
Abstract The low cost electrodeposition method was used to grow Cu2O thin films and experimentally determine the optimal absorber layer thickness. Raman scattering studies indicate the presence of solely crystalline Cu2O and SEM images show that the thin films consist of grains with a pyramidal shape. The influence of the thickness of the light absorbing Cu2O layer on the basic characteristic of the heterojunction and their properties have been investigated using reflectivity, current–voltage (J–V), capacitance–voltage (C–V) and the external quantum efficiency (EQE) measurements. The depletion layer, the charge collection length of the minority carrier, and reflectivity are the main factors…
Evaluation of nano/submicro pores in suspension plasma sprayed YSZ coatings
2019
Abstract Nano-submicro pores could considerably influence the coating performances and thus should be properly designed for the intended applications. However, it is challenging to characterize accurately such small pores in coatings. In this study, YSZ coatings were firstly manufactured by suspension plasma spray (SPS) and the nano-submicro pores in as-prepared coatings were investigated using Ultra-small-angle X-ray scattering (USAXS). Afterwards, a multivariate analysis on the effect of five different process parameters was carried out. The two main results showed that: 1) the nano-submicro pores content in coatings has a negative correlation with suspension mass load and powder size, an…
HCl gas gettering of low-cost silicon
2013
HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…
Thermal stability of magnetic characteristics of Co/Ag/Fe and Co/Ag/Fe20Ni80 spin-valve structures
2017
Abstract We investigated the thermal stability of magnetic characteristics of Co/Ag/Fe and Co/Ag/Fe 20 Ni 80 spin-valve structures. Thin film systems were obtained with the help of sputtering method. For the first type of systems two particular thicknesses ( d ML = 3 and 20 nm) and different disposition of magnetic layers (ML) were used. For the second type different thickness of Ag ( d NML ) spacer layer was used. The research of the crystal structure was performed with the transmission electron microscope. The results demonstrate that every investigated as-deposited sample does not include solid solutions, intermetallic compounds or impurities. It has been found that among the spin-valve…
Effect of oxidation post treatments on TiO2 coating manufactured using reactive very low-pressure plasma spraying (R-VLPPS)
2020
Abstract TiO2 coatings manufactured using reactive very low-pressure plasma spraying (R-VLPPS) were analyzed in different regions related to their position compared to the plasma flame. For that, a screen was used in order to hide an area of the substrate from the direct plasma flux. The coating morphology changed from quasi lamellar structure to highly vapor structure and coatings exhibited obvious modifications in terms of phases and mechanical properties. The effect of oxidation post treatment on the as sprayed coating was then studied by selecting two methods: in situ oxidation post treatment and classical thermal treatment. The two post treatments provided an increase of the main rutil…
Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations
2016
Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…
SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark
2019
Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…
Investigation of ZrO[sub 2]–Gd[sub 2]O[sub 3] Based High-k Materials as Capacitor Dielectrics
2010
Atomic layer deposition (ALD) of ZrO 2 ―Gd 2 O 3 nanolaminates and mixtures was investigated for the preparation of a high permittivity dielectric material. Variation in the relative number of ALD cycles for constituent oxides allowed one to obtain films with controlled composition. Pure ZrO 2 films possessed monoclinic and higher permittivity cubic or tetragonal phases, whereas the inclusion of Gd 2 O 3 resulted in the disappearance of the monoclinic phase. Changes in phase composition were accompanied with increased permittivity of mixtures and laminates with low Gd content. Further increase in the lower permittivity Gd 2 O 3 content above 3.4 cat. % resulted in the decreased permittivity…
Single crystal-like thin films of blue bronze
2021
Abstract Pulsed laser deposition technique was employed to grow thin films of K 0.3 M o O 3 on A l 2 O 3 (1-102) and S r T i O 3 (510) substrates. Structural and imaging characterization revealed good quality films with well oriented grains of few microns in length. Both non-selective (transport) and order-selective (femtosecond pump-probe spectroscopy) probes revealed charge density wave properties that are very close to those of the single crystals. The films exhibit metal-semiconductor phase transition in resistivity, pump-probe data show phase transition at the same temperature as the single crystal and the threshold for the photo-induced phase transition is approximately the same as in…
Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire
2020
A detailed structural investigation of the semiconductor-to-metal transition (SMT) in vanadium dioxide thin films deposited on sapphire substrates by pulsed laser deposition was performed by in situ temperature-dependent X-ray diffraction (XRD) measurements. The structural results are correlated with those of infrared radiometry measurements in the SWIR (2.5-5 μm) and LWIR (8-10.6 μm) spectral ranges. The main results indicate a good agreement between XRD and optical analysis, therefore demonstrating that the structural transition from monoclinic to tetragonal phases is the dominating mechanism for controlling the global properties of the SMT transition. The picture that emerges is a SMT tr…