Search results for "GAL"

showing 10 items of 9260 documents

First investigation on the phytotoxicity of fungi involved in "botriosphaeria dieback" in Sicilian vineyards

2014

"botriosphaeria dieback" fungal phytotoxicity vineyardsSettore AGR/12 - Patologia Vegetale
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Environnement et inégalités sociales

2015

International audience

"justice environnementale""inégalités sociales"[SHS.SOCIO]Humanities and Social Sciences/Sociology[SHS.SOCIO] Humanities and Social Sciences/Sociology""accès à l'eau"[ SHS.SOCIO ] Humanities and Social Sciences/Sociology"protection sociale"ComputingMilieux_MISCELLANEOUS
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CCDC 906037: Experimental Crystal Structure Determination

2013

Related Article: B.P.Waldron, D.Parker, C.Burchardt, D.S.Yufit, M.Zimny, F.Roesch|2013|Chem.Commun.|49|579|doi:10.1039/c2cc37544c

(N-(14-bis(1-carboxyethyl)-6-methyl-14-diazepan-6-yl)alaninato)-gallium monohydrateSpace GroupCrystallographyCrystal SystemCrystal StructureCell ParametersExperimental 3D Coordinates
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CCDC 906038: Experimental Crystal Structure Determination

2013

Related Article: B.P.Waldron, D.Parker, C.Burchardt, D.S.Yufit, M.Zimny, F.Roesch|2013|Chem.Commun.|49|579|doi:10.1039/c2cc37544c

(N-(14-bis(carboxymethyl)-6-phenyl-14-diazepan-6-yl)glycinato)-galliumSpace GroupCrystallographyCrystal SystemCrystal StructureCell ParametersExperimental 3D Coordinates
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Persistencia de residuos de disparo en puños de prendas de vestir

2013

La detección de partículas de residuos de disparo (RDD) en las ropas de un sospechoso es una evidencia muy importante en los casos judiciales para determinar si la persona disparó o no un arma de fuego. Sin embargo, debido a simples roces con otras superficies, las partículas asociadas al disparo se pierden por la actividad física de una persona. En este estudio se analizó la permanencia de los RDD retenidos sobre puños de prendas de vestir, luego de disparar una pistola calibre 9mm. Valiéndose de la técnica de Microscopía Electrónica de Barrido (SEM) combinada con Espectrometría de Energía Dispersiva (EDS) se caracterizó la morfología, composición y densidad de los RDD recolectados, tenien…

//purl.org/becyt/ford/1 [https]RESIDUOS DE DISPAROCiencias FísicasMedicina legalUNESCO::CIENCIAS MÉDICASPUÑOSCRIMINALISTICA//purl.org/becyt/ford/1.3 [https]Otras Ciencias Físicas:CIENCIAS MÉDICAS [UNESCO]Ciencias de la saludCIENCIAS NATURALES Y EXACTASSEM/EDS
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High‐Quality Si‐Doped β‐Ga 2 O 3 Films on Sapphire Fabricated by Pulsed Laser Deposition

2020

The EU Horizon 2020 project CAMART2 is acknowledged for partly supporting the project, and the Ion Technology Centre, ITC, in Sweden is acknowledged for ion beam analysis (ERDA).

010302 applied physicsFabricationMaterials sciencebusiness.industrydiodesSi doped02 engineering and technologyfabrication021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsPulsed laser depositiongallium oxideGallium oxideQuality (physics)wide bandgap0103 physical sciencesSapphire:NATURAL SCIENCES:Physics [Research Subject Categories]Optoelectronics0210 nano-technologybusinesspulsed laser depositionDiodephysica status solidi (b)
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Structural, optical, and luminescence properties of ZnO:Ga optical scintillation ceramic

2018

This paper discusses the characteristics of ZnO and ZnO:Ga ceramics fabricated by uniaxial hot pressing. The short-wavelength transmission limit of zinc oxide ceramics is in the 370-nm region; the long-wavelength limit is determined by the free-charge-carrier concentration and lies in the interval from 5 to 9 μm. The total transmittance of such ceramics in the visible and near-IR regions is about 70% when the sample is 0.5 mm thick. The luminescence spectrum is represented by a broad emission band with maximum at 580 nm, having a defect nature. The introduction of 0.03–0.1 mass % gallium into the zinc oxide structure inhibits grain growth and increases the free-charge-carrier concentration …

010302 applied physicsMaterials scienceApplied MathematicsExcitonGeneral EngineeringAnalytical chemistrychemistry.chemical_elementZincHot pressing01 natural sciencesAtomic and Molecular Physics and Optics010309 opticsComputational MathematicsGrain growthchemistryvisual_art0103 physical sciencesTransmittancevisual_art.visual_art_medium:NATURAL SCIENCES:Physics [Research Subject Categories]CeramicGalliumLuminescenceJournal of Optical Technology
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Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

2019

Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.

010302 applied physicsMaterials scienceCondensed matter physicsMechanical EngineeringSchottky barrierSchottky diodeGallium nitride02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsMicrostructure01 natural sciencesFree standing GaNchemistry.chemical_compoundQuality (physics)chemistryMechanics of MaterialsNi/GaN interface0103 physical sciencesGeneral Materials ScienceBarrier spatial inhomogeneity0210 nano-technologySchottky barrier
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Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

2019

We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…

010302 applied physicsMaterials sciencebusiness.industryGallium nitrideHeterojunction01 natural sciencesSettore ING-INF/01 - ElettronicaElectronic Optical and Magnetic Materialslaw.inventionchemistry.chemical_compoundchemistrylawPhase (matter)0103 physical sciencesElectrodeOptoelectronicsNanorodChemical-bath deposition (CBD) contact injection current spreading length zinc oxide (ZnO) nanorods ZnO/GaN-based light-emitting diodes (LEDs) ZnO/GaN heterostructures.Electrical and Electronic EngineeringbusinessWurtzite crystal structureLight-emitting diodeDiode
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Strain detection in non-magnetic steel by Kerr-microscopy of magnetic tracer layers

2018

Abstract For many applications of steel, e.g. for the evaluation of the fatigue state of components or structures, the characterization of the microscopic strain distribution in the material is important. We present a proof-of-principle for the visualization of such strain distributions by Kerr-microscopy of ferromagnetic tracer layers on nonmagnetic steel sheets. The influence of indentation induced strain on the magnetic domain pattern of 20 nm Galfenol and Permalloy tracer layers on austenitic AISI 904L steel sheets was investigated. The obtained Kerr-microscopy images show a characteristic domain pattern in the strained regions of the steel sheets, which is consistent with a dominant ma…

010302 applied physicsPermalloyAusteniteMaterials scienceStrain (chemistry)Magnetic domainPattern formation02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsFerromagnetismIndentation0103 physical sciencesComposite material0210 nano-technologyGalfenolJournal of Magnetism and Magnetic Materials
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