Search results for "GaAs"
showing 10 items of 20 documents
Optical Properties of III-V Nanowires and Their Application for Charge Transport and Single-Photon Emission
2012
This work covers the optical characterization of III-V semiconductor nanowires and their application for charge transport and for single-photon emission. InAs nanowires have been investigated by Raman scattering and PL spectroscopy. The possibility to grow nanowires with a crystal structure different from its bulk counterpart has aroused a lot of interest in their optical and electronic properties. Here, the optical phonon modes of wurtzite InAs nanowires have been studied by polarized Raman scattering. For the first time, Raman measurements on a single InAs nanowire have revealed the A1(TO) and E2h optical phonon modes of the wurtzite structure. Additional resonant Raman scattering experim…
Regenerable ZnO/GaAs Bulk Acoustic Wave Biosensor for Detection of Escherichia coli in “Complex” Biological Medium
2021
A regenerable bulk acoustic wave (BAW) biosensor is developed for the rapid, label-free and selective detection of Escherichia coli in liquid media. The geometry of the biosensor consists of a GaAs membrane coated with a thin film of piezoelectric ZnO on its top surface. A pair of electrodes deposited on the ZnO film allows the generation of BAWs by lateral field excitation. The back surface of the membrane is functionalized with alkanethiol self-assembled monolayers and antibodies against E. coli. The antibody immobilization was investigated as a function of the concentration of antibody suspensions, their pH and incubation time, designed to optimize the immunocapture of bacteria. The perf…
Optical characterization of individual GaAs quantum dots grown with height control technique
2013
We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. © 2013 AIP Publishing LLC.
Experimental investigation of the kink effect and the low frequency noise properties in pseudomorphic HEMT’s
2005
The kink effect in low-noise pseudomorphic (AlGaAs/InGaAs) HEMT's has been examined in detail by investigating the steady-state and pulsed I-V characteristics, the behavior of the output conductance dispersion and the performance of the gate leakage current to understand its origin. No clear evidence of impact ionization occurrence in the InGaAs channel at kink bias conditions (V-DS.kink = 1.5 V) has been found, thus suggesting that the predominant mechanism should be attributed to trap-related phenomena. A significant rise of the gate current has been found at very high drain voltages (far from V-DS.kink) associated with low drain current values which is probably due to impact ionization o…
The BLAST experiment
2009
The Bates large acceptance spectrometer toroid (BLAST) experiment was operated at the MIT-Bates Linear Accelerator Center from 2003 until 2005. The detector and experimental program were designed to study, in a systematic manner, the spin-dependent electromagnetic interaction in few-nucleon systems. As such the data will provide improved measurements for neutron, proton, and deuteron form factors. The data will also allow details of the reaction mechanism, such as the role of final state interactions, pion production, and resonances to be studied. The experiment used: a longitudinally polarized electron beam stored in the South Hall Storage Ring; a highly polarized, isotopically pure, inter…
Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping
2011
18 páginas, 3 tablas, 9 figuras.-- et al.
The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots
2013
[EN] The structural and morphological features of bimodal-sized InAs/(In) GaAs quantum dots with density in the low 10(9) cm(-2) range were analyzed with transmission electron microscopy and atomic force microscopy and were related to their optical properties, investigated with photoluminescence and time-resolved photoluminescence. We show that only the family of small quantum dots (QDs) is able to emit narrow photoluminescence peaks characteristic of single-QD spectra; while the behavior of large QDs is attributed to large strain fields that may induce defects affecting their optical properties, decreasing the optical intensity and broadening the homogeneous linewidth. Then, by using a rat…
Combined heat and power generation with a HCPV system at 2000 suns
2015
In the framework of the FAE “Fotovoltaico ad Alta Efficienza” (“High Efficiency Photovoltaic”) Research Project funded by the Sicilian Region under the program PO FESR Sicilia 2007/2013 4.1.1.1, we have developed an innovative solar CHP system for the combined production of heat and power at the high concentration level of 2000 suns [1]. This work shows the experimental results obtained on FAE-HCPV modules and analyses the behaviour of the system. The solar radiation is concentrated on commercial InGaP/InGaAs/Ge triple-junction solar cells designed for intensive work. The primary optics is a rectangular off-axis parabolic mirror (with a size of 46x46 = 2116 cm2 in a projection normal to the…
Electric conduction in semiconductors: a pedagogical model based on the Monte Carlo method
2008
We present a pedagogic approach aimed at modelling electric conduction in semiconductors in order to describe and explain some macroscopic properties, such as the characteristic behaviour of resistance as a function of temperature. A simple model of the band structure is adopted for the generation of electron–hole pairs as well as for the carrier transport in moderate electric fields. The semiconductor behaviour is described by substituting the traditional statistical approach (requiring a deep mathematical background) with microscopic models, based on the Monte Carlo method, in which simple rules applied to microscopic particles and quasi-particles determine the macroscopic properties. We …
Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates
2013
The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. © 2013 AIP Publishing LLC.