6533b835fe1ef96bd129f5d2

RESEARCH PRODUCT

Optical characterization of individual GaAs quantum dots grown with height control technique

Stefano SanguinettiMassimo GurioliSergio BiettiAnna VinattieriG. Muñoz MatutanoG. Muñoz MatutanoFrancesco Sarti

subject

PhotoluminescenceMaterials scienceNanostructureGaAs Molecular Beam Epitaxy quantum nanostructures photoluminescencebusiness.industrySpatially resolvedGeneral Physics and AstronomyDecoupling (cosmology)EpitaxyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectGallium arsenidechemistry.chemical_compoundCondensed Matter::Materials SciencechemistryQuantum dot laserQuantum dotFISICA APLICADAOptoelectronicsbusinessFIS/03 - FISICA DELLA MATERIAEpitaxy

description

We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. © 2013 AIP Publishing LLC.

yearjournalcountryeditionlanguage
2013-09-28
10.1063/1.4821901http://hdl.handle.net/10251/44778