Search results for "GaAs"
showing 10 items of 20 documents
Mapping an electron wave function by a local electron scattering probe
2015
A technique is developed which allows for the detailed mapping of the electronic wave function in two-dimensional electron gases with low-temperature mobilities up to $15\times {10}^{6}\;{\mathrm{cm}}^{2}\;{{\rm{V}}}^{-1}\;{{\rm{s}}}^{-1}$. Thin ('delta') layers of aluminium are placed into the regions where the electrons reside. This causes electron scattering which depends very locally on the amplitude of the electron wave function at the position of the Al δ-layer. By changing the distance of this layer from the interface we map the shape of the wave function perpendicular to the interface. Despite having a profound effect on the electron mobiliy, the δ-layers do not cause a widening of …
Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping
2011
18 páginas, 3 tablas, 9 figuras.-- et al.
Monte Carlo simulation of high‐order harmonics generation in bulk semiconductors and submicron structures
2004
To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) for THz high‐order harmonic generation and extraction, the harmonic intensity, intrinsic noise and signal‐to‐noise ratio are calculated by the Monte Carlo method when a periodic high‐frequency large‐amplitude external signal is applied to a semiconductor device. Due to very high signal‐to‐noise ratio heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonic extraction that are definitively superior to those of bulk materials. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Electrical-optical characterization of multijunction solar cells under 2000X concentration
2014
In the framework of the FAE "Fotovoltaico ad Alta Efficienza" ("High Efficiency Photovoltaic") Research Project (PO FESR Sicilia 2007/2013 4.1.1.1), we have performed electrical and optical characterizations of commercial InGaP/InGaAs/Ge triple-junction solar cells (1 cm2) mounted on a prototype HCPV module, installed in Palermo (Italy). This system uses a reflective optics based on rectangular off-axis parabolic mirror with aperture 45×45 cm2 leading to a geometrical concentration ratio of 2025. In this study, we report the I-V curve measured under incident power of about 700 W/m2 resulting in an electrical power at maximum point (PMP) of 41.4 W. We also investigated the optical properties…
Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates
2013
The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. © 2013 AIP Publishing LLC.
Experimental investigation of the kink effect and the low frequency noise properties in pseudomorphic HEMT’s
2005
The kink effect in low-noise pseudomorphic (AlGaAs/InGaAs) HEMT's has been examined in detail by investigating the steady-state and pulsed I-V characteristics, the behavior of the output conductance dispersion and the performance of the gate leakage current to understand its origin. No clear evidence of impact ionization occurrence in the InGaAs channel at kink bias conditions (V-DS.kink = 1.5 V) has been found, thus suggesting that the predominant mechanism should be attributed to trap-related phenomena. A significant rise of the gate current has been found at very high drain voltages (far from V-DS.kink) associated with low drain current values which is probably due to impact ionization o…
The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots
2013
[EN] The structural and morphological features of bimodal-sized InAs/(In) GaAs quantum dots with density in the low 10(9) cm(-2) range were analyzed with transmission electron microscopy and atomic force microscopy and were related to their optical properties, investigated with photoluminescence and time-resolved photoluminescence. We show that only the family of small quantum dots (QDs) is able to emit narrow photoluminescence peaks characteristic of single-QD spectra; while the behavior of large QDs is attributed to large strain fields that may induce defects affecting their optical properties, decreasing the optical intensity and broadening the homogeneous linewidth. Then, by using a rat…
Polarized recombination of acoustically transported carriers in GaAs nanowires
2012
: The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation d…
Regenerable ZnO/GaAs Bulk Acoustic Wave Biosensor for Detection of Escherichia coli in “Complex” Biological Medium
2021
A regenerable bulk acoustic wave (BAW) biosensor is developed for the rapid, label-free and selective detection of Escherichia coli in liquid media. The geometry of the biosensor consists of a GaAs membrane coated with a thin film of piezoelectric ZnO on its top surface. A pair of electrodes deposited on the ZnO film allows the generation of BAWs by lateral field excitation. The back surface of the membrane is functionalized with alkanethiol self-assembled monolayers and antibodies against E. coli. The antibody immobilization was investigated as a function of the concentration of antibody suspensions, their pH and incubation time, designed to optimize the immunocapture of bacteria. The perf…
Combined heat and power generation with a HCPV system at 2000 suns
2015
In the framework of the FAE “Fotovoltaico ad Alta Efficienza” (“High Efficiency Photovoltaic”) Research Project funded by the Sicilian Region under the program PO FESR Sicilia 2007/2013 4.1.1.1, we have developed an innovative solar CHP system for the combined production of heat and power at the high concentration level of 2000 suns [1]. This work shows the experimental results obtained on FAE-HCPV modules and analyses the behaviour of the system. The solar radiation is concentrated on commercial InGaP/InGaAs/Ge triple-junction solar cells designed for intensive work. The primary optics is a rectangular off-axis parabolic mirror (with a size of 46x46 = 2116 cm2 in a projection normal to the…