0000000000326861

AUTHOR

Francesco Sarti

showing 3 related works from this author

Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates

2012

We show that the epitaxial growth of thin layers of AlGaAs on Ge and Si substrates allows to obtain single photon sources by exploiting the sparse and unintentional contamination with acceptors of the AlGaAs. Very bright and sharp single photoluminescence lines are observed in confocal microscopy. These lines behave very much as single excitons in quantum dots, but their implementation is by far much easier, since it does not require 3D nucleation. The photon antibunching is demonstrated by time resolved Hanbury Brown and Twiss measurements.

Photon antibunchingPhotonMaterials sciencePhotoluminescencePhysics and Astronomy (miscellaneous)Droplet Epitaxybusiness.industryExcitonquantum dotCondensed Matter::Mesoscopic Systems and Quantum Hall EffectGallium arsenideCondensed Matter::Materials Sciencechemistry.chemical_compoundSemiconductorchemistrySingle photon emitterQuantum dotOptoelectronicsGaAbusinessFIS/03 - FISICA DELLA MATERIAMolecular beam epitaxyApplied Physics Letters
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Optical characterization of individual GaAs quantum dots grown with height control technique

2013

We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. © 2013 AIP Publishing LLC.

PhotoluminescenceMaterials scienceNanostructureGaAs Molecular Beam Epitaxy quantum nanostructures photoluminescencebusiness.industrySpatially resolvedGeneral Physics and AstronomyDecoupling (cosmology)EpitaxyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectGallium arsenidechemistry.chemical_compoundCondensed Matter::Materials SciencechemistryQuantum dot laserQuantum dotFISICA APLICADAOptoelectronicsbusinessFIS/03 - FISICA DELLA MATERIAEpitaxy
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Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

2013

The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. © 2013 AIP Publishing LLC.

GaAs Molecular Beam Epitaxy quantum nanostructures photoluminescenceMaterials sciencePhotoluminescencePhotonbusiness.industryQuantum dotsGeneral Physics and AstronomySemiconductorPolarization (waves)Gallium arsenidechemistry.chemical_compoundSemiconductorchemistryQuantum dotOptoelectronicsbusinessBiexcitonSingle photonsMolecular beam epitaxy
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