6533b7d8fe1ef96bd126affb
RESEARCH PRODUCT
Single photon emission from impurity centers in AlGaAs epilayers on Ge and Si substrates
Sergio BiettiStefano SanguinettiFrancesco SartiLucia CavigliMassimo GurioliG. Muñoz MatutanoG. Muñoz MatutanoM. AbbarchiM. AbbarchiAnna VinattieriNicolò AccantoS. Minarisubject
Photon antibunchingPhotonMaterials sciencePhotoluminescencePhysics and Astronomy (miscellaneous)Droplet Epitaxybusiness.industryExcitonquantum dotCondensed Matter::Mesoscopic Systems and Quantum Hall EffectGallium arsenideCondensed Matter::Materials Sciencechemistry.chemical_compoundSemiconductorchemistrySingle photon emitterQuantum dotOptoelectronicsGaAbusinessFIS/03 - FISICA DELLA MATERIAMolecular beam epitaxydescription
We show that the epitaxial growth of thin layers of AlGaAs on Ge and Si substrates allows to obtain single photon sources by exploiting the sparse and unintentional contamination with acceptors of the AlGaAs. Very bright and sharp single photoluminescence lines are observed in confocal microscopy. These lines behave very much as single excitons in quantum dots, but their implementation is by far much easier, since it does not require 3D nucleation. The photon antibunching is demonstrated by time resolved Hanbury Brown and Twiss measurements.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2012-10-22 | Applied Physics Letters |