6533b862fe1ef96bd12c6efa

RESEARCH PRODUCT

Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

Stefano SanguinettiNicola DottiMassimo GurioliGiovanni IsellaG. Muñoz MatutanoG. Muñoz MatutanoD. BauerD. BauerAnna VinattieriSergio BiettiFrancesco Sarti

subject

GaAs Molecular Beam Epitaxy quantum nanostructures photoluminescenceMaterials sciencePhotoluminescencePhotonbusiness.industryQuantum dotsGeneral Physics and AstronomySemiconductorPolarization (waves)Gallium arsenidechemistry.chemical_compoundSemiconductorchemistryQuantum dotOptoelectronicsbusinessBiexcitonSingle photonsMolecular beam epitaxy

description

The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. © 2013 AIP Publishing LLC.

yearjournalcountryeditionlanguage
2013-12-14
10.1063/1.4844375https://hdl.handle.net/10251/44639