Search results for "Gallium"
showing 10 items of 265 documents
Approaching ‘kit-type’ labelling with 68Ga : the DATA chelators.
2015
The DATA chelators are a novel class of tri-anionic ligands based on 6-amino-1,4-diazepine-triacetic acid, which have been introduced recently for the chelation of (68)Ga. Compared with macrocyclic chelators based on the cyclen scaffold (i.e., DOTA, DO3A, and DO2A derivatives), DATA chelators undergo quantitative radiolabelling more rapidly and under milder conditions. In this study, a systematic evaluation of the labelling of four DATA chelators--DATA(M), DATA(P), DATA(Ph), and DATA(PPh)--with (68)Ga is presented. The results highlight the extraordinary potential of this new class of chelators for application in molecular imaging using (68)Ga positron emission tomography (PET).
Structural evolution of theCuGaO2delafossite under high pressure
2004
We have performed pseudopotential calculations and x-ray-diffraction and x-ray-absorption measurements on the ${\mathrm{CuGaO}}_{2}$ delafossite under high pressure. We have completely characterized the structural behavior of the low pressure phase. We have found out that the a axis is more compressible than the c axis, and as a consequence the oxygen octahedra defined by the gallium environment tend to become more regular under high pressure. We have determined the internal parameter describing the oxygen position inside the unit cell, and seen that it is nearly constant when pressure is applied. We have observed an irreversible phase transition affecting the copper environment but not the…
Lattice dynamics study of nanocrystalline yttrium gallium garnet at high pressure
2014
This work reports an experimental and theoretical lattice dynamics study of nanocrystalline Y3Ga5O12 (YGG) garnet at high pressures. Raman scattering measurements in nanocrystalline Tm3+-doped YGG garnet performed up to 29 GPa have been compared to lattice dynamics ab initio calculations for bulk garnet carried out up to 89 GPa. Good agreement between the theoretical vibrational modes of bulk crystal and the experimental modes measured in the nanocrystals is found. The contribution of GaO4 tetrahedra and GaO6 octahedra to the different phonon modes of YGG is discussed on the basis of the calculated total and partial phonon density of states. Symmetries, frequencies, and pressure coefficient…
Spatial inhomogeneities and defect structures in CIGS and CIS materials: An ab-initio based Monte Carlo study
2011
The chalcopyrite semiconductors CuIn 1−x Ga x Se 2 (CIGS) and CuInSe 2 (CIS) are excellent materials for high efficiency and low cost thin-film solar cells. This is due to the effective absorption of the solar spectrum and the inherent resilience to defects and composition fluctuations. Although the CIGS and CIS material in solar cells is highly inhomogeneous and exhibits a lot of different defects, the cell efficiencies are exceptionally high. If single crystalline absorbers are used, efficiencies are lower. Therefore, studying spatial inhomogeneities and defect structures is of great importance for understanding what supports and what diminishes the efficiency and robustness of the cells.…
Mechanism of water adsorption in the large pore form of the gallium-based MIL-53 metal-organic framework
2016
Abstract Water adsorption in the large pore ( lp_empty ) form of Ga-MIL-53 was studied by TGA, DSC and in situ XRD and FTIR at 298 K. The large pore form can be stabilized at room temperature after activation under vacuum at 553 K. The isotherm of water adsorption in this large pore form (pore dimensions: 1.67 × 1.33 nm) is very similar to that measured on the narrow pore ( np_empty ) form (pore dimensions: 1.97 × 0.76 nm). Such a similarity is rather unusual given that the pore sizes of these two phases are very different. In order to understand the origin of this effect in situ XRD and FTIR measurements were particularly helpful. It was found that the adsorption of even small amount of wa…
NODAPA-OH and NODAPA-(NCS)n: Synthesis, 68Ga-radiolabelling and in vitro characterisation of novel versatile bifunctional chelators for molecular ima…
2008
This report concerns synthesis, (68)Ga-radiolabelling and stability data of 1,4,7-triazacyclononane-1,4-diacetic acid-7-p-isothio-cyanatophenyl-acetic acid (NODAPA-NCS), 1,4,7-triazacyclononane-1-acetic acid-4,7-di-p-isothiocyanatophenyl-acetic acid (NODAPA-(NCS)(2)) and 1,4,7-triazacyclononane-1,4-diacetic acid-7-p-hydroxyphenyl-acetic acid (NODAPA-OH), versatile bifunctional chelators with potential for molecular imaging. Protein binding and exemplified conjugation are also reported.
Gallium doped SiO2: Towards a new luminescent material
2007
We show how the interaction between Ga atoms and silica samples in a hot environment gives rise to permanent inclusions of Ga inside the silica matrix which, in turn, produce typical luminescence features. The Ga doped silica is analyzed via laser induced fluorescence, photoluminescence and electron paramagnetic resonance spectroscopies. The results evidence the presence of modifications induced by the Ga inclusions inside the silica matrix and some preliminary hypothesis on their nature are advanced. Possible applications of such Ga doped silica are also mentioned.
Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures
2002
5 páginas, 4 figuras.
Recombination processes in unintentionally doped GaTe single crystals
2002
Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and…
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
2007
We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …