6533b7d0fe1ef96bd125b83e
RESEARCH PRODUCT
Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures
Anna VinattieriJuan P. Martínez-pastorMarcello ColocciLuisa GonzálezC. Rudamassubject
PhotoluminescenceCondensed matter physicsCondensed Matter::OtherChemistryExcitonHeterojunctionSurfaces and InterfacesQuantum effectsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsSurfaces Coatings and FilmsGallium arsenideCondensed Matter::Materials Sciencechemistry.chemical_compoundQuantum wellsGallium arsenideMaterials ChemistryContinuous wavePhotoluminescenceMolecular beam epitaxyBiexcitonQuantum wellMolecular beam epitaxydescription
5 páginas, 4 figuras.
year | journal | country | edition | language |
---|---|---|---|---|
2002-06-01 | Surface Science |