Search results for "Gallium"

Electric control of the spin Hall effect by intervalley transitions

2013

Controlling spin-related material properties by electronic means is a key step towards future spintronic technologies. The spin Hall effect (SHE) has become increasingly important for generating, detecting and using spin currents, but its strength-quantified in terms of the SHE angle-is ultimately fixed by the magnitude of the spin-orbit coupling (SOC) present for any given material system. However, if the electrons generating the SHE can be controlled by populating different areas (valleys) of the electronic structure with different SOC characteristic the SHE angle can be tuned directly within a single sample. Here we report the manipulation of the SHE in bulk GaAs at room temperature by m…

Above-bandgap ordinary optical properties of GaSe single crystal

2009

We report above-bandgap ordinary optical properties of ε-phase GaSe single crystal. Reference-quality pseudodielectric function 〈ε(E)〉 = 〈ε1(E)〉+i〈ε2(E)〉 and pseudorefractive index 〈N(E)〉 = 〈n(E)〉+i〈k(E)〉 spectra were measured by spectroscopic ellipsometry from 0.73 to 6.45 eV at room temperature for the light polarization perpendicular to the optic axis (math⊥math). The 〈ε〉 spectrum exhibited several interband-transition critical-point structures. Analysis of second-energy derivatives calculated numerically from the measured data yielded the critical-point energy values. Carmen.Martinez-Tomas@uv.es

Neutron irradiation defects in gallium sulfide: Optical absorption measurements

1997

Gallium sulfide single crystals have been irradiated with different thermal neutron doses. Defects introduced by neutron irradiation turn out to be optically active, giving rise to absorption bands with energies ranging from 1.2 to 3.2 eV. Bands lying in the band-gap exhibit Gaussian shape. Their energies and widths are independent of the irradiation dose, but their intensities are proportional to it. Thermal annealing is completed in two stages, ending at around 500 and 720 K, respectively. Centers responsible for the absorption bands are proposed to be gallium-vacancy-galliuminterstitial complexes in which the distance between the vacancy (acceptor) and the interstitial (donor) determines…

CIGS PV Module Characteristic Curves Under Chemical Composition and Thickness Variations

2014

This paper analyzes how the electrical characteristics of a CIGS photovoltaic module are affected by the chemical composition and by the thickness variations of the CIGS absorber. The electrical characteristics here considered are the short circuit current, the open circuit voltage, the efficiency and the power peak. The chemical composition is varied by tuning the ratio between gallium and indium. This analysis has been performed by means of the wxAMPS software, developed by the University of Illinois. The above variations have been taken into account on a PV module made of 72 cells. This analysis has been carried out employing a PV module mathematical model developed and implemented by th…

2020

The reaction of the copper(I) β-diketiminate copper complex {(Cu(BDIMes))2(μ-C6H6)} (BDIMes = N,N'-bis(2,4,6-trimethylphenyl)pentane-2,4-diiminate) with the low-valent group 13 metal β-diketiminates M(BDIDip) (M = Al or Ga; BDIDip = N,N'-bis(2,6-diisopropylphenyl)pentane-2,4-diiminate) in toluene afforded the complexes {(BDIMes)CuAl(BDIDip)} and {(BDIMes)CuGa(BDIDip)}. These feature unsupported copper-aluminum or copper-gallium bonds with short metal-metal distances, Cu-Al = 2.3010(6) A and Cu-Ga = 2.2916(5) A. Density functional theory (DFT) calculations showed that approximately half of the calculated association enthalpies can be attributed to London dispersion forces.

Counterintuitive Mechanisms of the Addition of Hydrogen and Simple Olefins to Heavy Group 13 Alkene Analogues

2013

The mechanism of the reaction of olefins and hydrogen with dimetallenes ArMMAr (Ar = aromatic group; M = Al or Ga) was studied by density functional theory calculations and experimental methods. The digallenes, for which the most experimental data are available, are extensively dissociated to gallanediyl monomers, :GaAr, in hydrocarbon solution, but the calculations and experimental data showed also that they react with simple olefins, such as ethylene, as intact ArGaGaAr dimers via stepwise [2 + 2 + 2] cycloadditions due to their considerably lower activation barriers vis-à-vis the gallanediyl monomers, :GaAr. This pathway was preferred over the [2 + 2] cycloaddition of olefin to monomeric…

Splitting of surface-related phonons in Raman spectra of self-assembled GaN nanowires

2012

cited By 2; International audience; Micro Raman spectroscopy studies have been performed on GaN nanowires grown by Plasma-Assisted Molecular Beam Epitaxy on Silicon (111) substrate. From the analysis of experimental data, the emergence of a two peaks band located near 700 cm-1 has been attributed to the Raman scattering by surface-related phonons. We have analyzed the surface character of these two modes by changing the dielectric constant of the exterior medium and some experimental parameters. Furthermore, a theoretical model describing the nanowires ensemble by means of an effective dielectric function has been used to interpret the Raman scattering results. Those numerical simulations a…

Fabrication and Photoelectrochemical Behavior of Ordered CIGS Nanowire Arrays for Application in Solar Cells

2010

In this work, we report some preliminary results concerning the fabrication of quaternary copper, indium, gallium, and selenium CIGS nanowires that were grown inside the channels of an anodic alumina membrane by one-step potentiostatic deposition at different applied potentials and room temperature. A tunable nanowire composition was achieved through a manipulation of the applied potential and electrolyte composition. X-ray diffraction analysis showed that nanowires, whose chemical composition was determined by energy-dispersive spectroscopy analysis, were amorphous. A composition of Cu0.203In0.153Ga0.131Se0.513, very close to the stoichiometric value, was obtained. These nanostructures wer…

Multilevel pattern generation by GaN laser lithography: an application to beam shaper fabrication

2006

The new GaN lasers represent a unique combination of compactness, reliability, energy efficiency, and short wavelength. With respect to the previous state of the art in direct laser write lithography, based on gas lasers, this is resulting in a breakthrough, and is opening the way to real desktop micropatterning. The field of diffractive optics can immediately benefit by the availability of a new breed of pattern generators, based on such sources, mainly for fast turnaround device development. This paper presents the technical advantages involved in the use of 405 nm GaN lasers for one-step multilevel patterning. Beam modulation, exposure control and overall process strategy are discussed. …

Experimental and numerical study of anomalous thermocapillary convection in liquid gallium

1999

Thermocapillary Marangoni convection of liquid gallium was studied experimentally and numerically. A specially designed experimental setup ensured an oxide-free surface of the liquid gallium for a very long time. The convective flow at the free surface was found to be directed opposite to both buoyancy-driven and ordinary thermocapillary convection. The anomalous direction of the thermocapillary flow was explained by the presence of a small amount of a surface-active contaminant—lead adsorbed at the free surface. Two different approaches were used to describe the observed phenomenon. First, the flow was treated as a pure thermocapillary convection with a modified dependence of the surface t…