Search results for "Giant Magnetoresistance"

High-temperature transport properties of La0.67Ca0.33MnO3 films

1999

Abstract The giant negative magnetoresistance in manganites has been investigated from the Curie temperature T c up to 600 K (2.6 T c ) in magnetic fields up to 8 T. Nonadiabatic small polaron hopping can successfully describe the temperature dependence of the resistivity. The magnetic field influence on the activation energy is explained by the interaction of unclustered ions with small spin clusters of four ions.

Spintronics and Nanomemory Systems

2017

The chapter presents and explains the possibilities of CNT forest growth on Fe–Pt nanoparticles for the magnetic nanomemory. The magnetoresistance phenomena – giant magnetoresistance and tunnelling magnetoresistance (GMR and TMR) – for nanomemory devices are based on CNTs of various morphologies (i.e. various chiralities, diameters). It includes metal- and semiconductor-like CNTs which can be considered as alternative variants for electromagnetic nanosensoring and magnetic nanomemory. The chapter also presents simulations of Fe–Pt magnetically disordered nanodrops, as well as spin transport models.

Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies

2014

Giant Magnetoresistance (GMR) based technology is nowadays the preferred option for low magnetic fields sensing in disciplines such as biotechnology or microelectronics. Their compatibility with standard CMOS processes is currently investigated as a key point for the development of novel applications, requiring compact electronic readout. In this paper, such compatibility has been experimentally studied with two particular non-dedicated CMOS standards: 0.35 μm from AMS (Austria MicroSystems) and 2.5 μm from CNM (Centre Nacional de Microelectrònica, Barcelona) as representative examples. GMR test devices have been designed and fabricated onto processed chips from both technologies. In order …

Growth mechanism and transport properties of thin La0.67Ca0.33MnO3 films

1999

Abstract We prepared thin films of La 0.67 Ca 0.33 MnO 3 on different substrates with DC sputtering. The measured transport and magnetic properties could be explained by a lattice mismatch induced by the substrate. Hall effect measurements showed a holelike charge carrier density n * h = 1.3 per unit cell below T C . The magnetoresistance results from an increase of the mobility of the charge carriers in magnetic field.

Impact of granularity on transport properties of mechanically stressed La0.67Ca0.33MnO3 films

2001

Abstract (La,Ca)MnO 3 is one of so called collosal magnetoresistive materials and it is of interest to correlate its transport properties to film growth in order to optimize its performance. Two-hundred nanometers thick (100)La 0.67 Ca 0.33 MnO 3 films were grown by laser ablation on (100)SrTiO 3 , (100)LaAlO 3 and (100)(LaAlO 3 ) 0.3 +(Sr 2 AlTaO 6 ) 0.7 substrates. The films were granular in structure with low angle boundaries between the grains. The volume of the unit cell was considerably smaller for films grown on a SrTiO 3 substrate than on LaAlO 3 . At temperatures higher than the one where the spins order, the strongest response of resistivity on temperature ρ ( T ) was measured for…

Quasi-static magnetoresistive sensor modeling for current-time conversion circuit applications

2011

In this paper we report a current-to-time converter (CTC) suitable for current sensor monitoring in low power applications. Based on a discrete resistence-to-frequency converter and a Giant MagnetoResistance (GMR) current sensor. Simulations have been done using a quasi-static electrical Verilog-A model for the GMR current sensor. A reduced set of parameters has been extracted to characterize the GMR sensor's behavior. The application has been analyzed making use of different sensors, whose device parameters were previously extracted. Finally, the accuracy of the models has been tested by comparing with experimental transient measurements.

Graphene enhances the magnetoresistance of FeNi3nanoparticles in hierarchical FeNi3–graphene nanocomposites

2016

An increase in the giant magnetoresistance of FeNi3 nanoparticles of 20 times has been observed in FeNi3–graphene nanocomposites synthesized using NiFe-layered double hydroxide hybrids as precursors. The magnetic, transport and magneto-transport properties of these nanocomposites are studied and compared with those of the pure FeNi3 nanoparticles. The hierarchical structure and hybrid composition of these magnetic nanocomposites lead to the observation of two unusual magneto-transport properties, namely (i) an enhancement in the low-field magnetoresistance effects, and (ii) a crossover from negative to positive MR upon cooling down the sample.

Design of Molecular Spintronics Devices Containing Molybdenum Oxide as Hole Injection Layer

2017

Quasi‐digital front‐ends for current measurement in integrated circuits with giant magnetoresistance technology

2014

In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level si…

Giant magnetoresistance in semiconducting DyNiBi

2008

Abstract The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal–insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.