Search results for "Giant Magnetoresistance"
showing 9 items of 29 documents
Accessing the fundamentals of magnetotransport in metals with terahertz probes
2015
Spin-dependent conduction in metals underlies all modern magnetic memory technologies, such as giant magnetoresistance (GMR). The charge current in ferromagnetic transition metals is carried by two non-mixing populations of sp-band Fermi-level electrons: one of majority-spin and one of minority-spin. These electrons experience spin-dependent momentum scattering with localized electrons, which originate from the spin-split d-band. The direct observation of magnetotransport under such fundamental conditions, however, requires magnetotransport measurements on the same timescale as the electron momentum scattering, which takes place in the sub-100 fs regime. Using terahertz electromagnetic prob…
Vibration Detector Based on GMR Sensors
2009
Up to now, vibrations have mostly been sensed by measuring displacement, velocity, and acceleration. The most common types of vibration sensors are piezoelectric, capacitive, null-balance, strain gage, optoelectronic, resonance beam, and piezoresistive. We present a low-cost and low-power vibration detector based on the measurement of magnetic field variations induced in a recent SS501 giant magnetoresistance (GMR) magnetic sensor, for which has never been applied. Vibrations on small ferromagnetic pieces disturb the Earth's magnetic field. These weak perturbations can be detected and measured over the assumed constant Earth's magnetic field, which is uniform over a wide area. A novel array…
Current-induced domain wall motion in nanoscale ferromagnetic elements
2011
The manipulation of a magnetic domain wall (DW) by a spin polarized current in ferromagnetic nanowires has attracted tremendous interest during the last years due to fundamental questions in the fields of spin dependent transport phenomena and magnetization dynamics but also due to promising applications, such as DW based magnetic memory concepts and logic devices. We comprehensively review recent developments in the field of geometrically confined domain walls and in particular current induced DW dynamics. We focus on the influence of the magnetic and electronic transport properties of the materials on the spin transfer effect in DWs. After considering the different DW structures in ferrom…
Strain-Controlled Giant Magnetoresistance in Spin Valves Grown on Shape Memory Alloys
2019
We report a strain-mediated giant magnetoresistance (GMR) in spin valves (SPVs) grown on shape memory alloys (SMAs). The SPVs with a stacking structure of Al2O3/Co90Fe10/Cu/Co90Fe10/IrMn/Pt were de...
Giant Negative Magnetoresistance in GdI2: Prediction and Realization
1999
The electronic structure of the layered d1 compound GdI2 has been examined systematically in view of its relation to other layered d1 systems including superconducting and isostructural 2H-TaS2 and 2H-NbSe2. A van Hove type instability is evident in suitable representations of the Fermi surface. The presence of the half-filled and magnetic 4f level should preclude the possibility of superconductivity. Instead GdI2 orders ferromagnetically at 290(5) K and displays large negative magnetoresistance ≈70% at 7 T close to room temperature. This finding provides support to the idea that materials can be searched rationally for interesting properties through high level electronic structure calculat…
Integration of GMR sensors with different technologies
2016
Less than thirty years after the giant magnetoresistance (GMR) effect was described, GMR sensors are the preferred choice in many applications demanding the measurement of low magnetic fields in small volumes. This rapid deployment from theoretical basis to market and state-of-the-art applications can be explained by the combination of excellent inherent properties with the feasibility of fabrication, allowing the real integration with many other standard technologies. In this paper, we present a review focusing on how this capability of integration has allowed the improvement of the inherent capabilities and, therefore, the range of application of GMR sensors. After briefly describing the …
Spin-valve current sensor for industrial applications
2003
This work presents an industrial application of a new spin-valve current sensor based on the giant magnetoresistance effect (GMR) and provides a comparison between this sensor and the typical sensor used in these applications, the hall sensor. Experimental results derived from the application of this two sensors in a power application (a bi-directional three-phase rectifier) are shown.
Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors
2013
Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function is obtain…
GMR Based Sensors for IC Current Monitoring
2013
The Giant MagnetoResistance (GMR) effect is a magnetic coupling mechanism that can be obtained in multilayer structures of few nanometers thick. In these devices, and at room temperature, the resistance is a function of the external magnetic field, at optimal levels for being used as sensors. Since the GMR effect was reported, scientists and engineers have dedicated their effort to this topic. This way, after two decades, a a very good knowledge of the GMR underlying physics together with notable designs of GMR based devices are nowadays available. They were initially used in the read heads of hard drives, but the constant evolution that this technology has experienced has open new fields o…