Search results for "HOT"
showing 10 items of 14851 documents
Pyrolytic formation of polycyclic aromatic hydrocarbons from sesquiterpenes
2012
Author's version of an article in the journal: Food Chemistry. Also available from the publisher at: http://dx.doi.org/10.1016/j.foodchem.2012.06.033 The products of the pyrolysis of four sesquiterpenes, β-caryophyllene, α-cedrene, longifolene and valencene, have been examined. Pyrolysis was carried out at 300, 400 and 500 °C, the products determined by GC–MS and then examined for similarities and differences using multivariate data analysis. Analysis showed that longifolene was most resistant and caryophyllene least resistant to pyrolysis with cedrene and valencene occupying intermediate positions. While the compounds were largely unchanged at 300 °C, polycyclic aromatic hydrocarbons (PAHs…
Analysis of parametric uncertainty in a shot noise model
2005
All model calibrations are subject to uncertainty. Even when an optimization procedure is used, the specific calibration period strongly influences the parameter values and causes uncertainty in streamflow prediction. The present paper aims to study the influence that the dimension and the position of the sampling period have on the uncertainty of the response of a daily conceptual shot noise model. The simulations have been conducted using continuous daily series of discharges recorded for 76 years on the river basin of Oreto (Palermo, Italy). Many continuous sub-series for simulations have been obtained from the historical series available. In the first place many model calibrations have …
Responsivity measurements of SiC photodiodes
2014
We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV photodiodes (henceforth, named SiC8, SiC10, SiC20) employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm respectively [1] and based on the pinch-off surface effect.
The structural disorder of a silica network probed by site selective luminescence of the nonbridging oxygen hole centre
2011
We studied the inhomogeneous distribution of the luminescence band associated with the nonbridging oxygen hole centre in silica through site selective excitation/detection of the zero phonon line by a tunable laser source. Defects induced in the bulk of synthetic samples by γ and β exposure exhibit an increase of the inhomogeneous width from 0.071 to 0.086 eV on increasing the irradiation dose from 2 × 10(6) to 5 × 10(9) Gy. We also investigated two defect variants stabilized at the surface of the silica nanoparticles, (≡ Si-O)3 Si–O* and (≡ Si-O)2(H-O)Si-O*, whose inhomogeneous width was measured to be 0.042 eV and 0.060 eV, respectively. These results can be accounted for by the structura…
Radiation induced generation of Non-Bridging Oxygen Hole Center: intrinsic and extrinsic processes
2006
Stability of sol-gel silica glass for CPV and ultraviolet LED applications
2011
This paper concerns the characterization of silica glass obtained by a sol-gel technique as to its suitability in the terrestrial and space concentrated photovoltaic (CPV), and ultraviolet light emitting diode (UV LED) industrial sectors. The sol-gel material tested is produced by Evonik Industries and marketed under the brand name SAVOSIL™. The tests performed were aimed at determining the endurance of the material to radiation exposure and consist of exposure to gamma radiation and 355 nm UV laser light. In these tests the transmittance of the glass was measured before and after the exposure to the radiation to determine the effect of the radiation treatment. In the case of the test with …
Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes
2016
Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed
Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
2018
Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal- semiconductor interface or localized melting of the silicon …
Amorphous silicon nanotubes
2017
In the following, the attention will be focused on the silicon nanotube (SiNTs) that is a highly desired form of silicon for its fundamental role in the miniaturization trend of the electronic devices. After a description of the properties and applications of SiNTs and their fabrication methods, the attention will be focused on chemical vapour deposition (CVD) template synthesis that is the most usual synthetic method for this material. Then, galvanic template synthesis will be described as a general method for the fabrication of different metals and oxides nanostructures, therefore the use of this technique for synthesizing SiNTs will be detailed. Characterization methods will be also desc…
Physiological parameters measurements in a cardiac cycle via a combo PPG-ECG system
2015
In this paper, we present an innovative way to measure some physiological parameters (such as the pre-ejection period, the pulse transit time, the blood pressure) in a cardiac cycle. A combo PPG-ECG system has been developed and employed to extract both the ECG signal from standard limb leads and simultaneously the photoplethysmography signal from the wrist and the forearm, to calculate the pre-ejection period. This system represents an easy and non-invasive technique to determine these biomedical parameters without using expensive impedance cardiography equipment.