Search results for "Hall Effect"
showing 10 items of 702 documents
Normal and mixed state Hall effect in (Hg0.9Re0.1)Ba2CaCu2O6+δ fully textured HTSC thin films
2004
Abstract Temperature and magnetic field dependence of the Hall effect in the normal and mixed state of fully textured (Hg0.9Re0.1)Ba2CaCu2O6+δ (HgRe-1212) HTSC thin films prepared by laser ablation deposition have been studied. The longitudinal resistivity ρxx and Hall resistivity ρyx of HgRe-1212 superconductor thin films were measured for a wide range of magnetic fields from 125 mT to 12 T with the field perpendicular to the ab plane and the current in the ab plane. A sign change of the Hall resistivity is observed in fields below 3 T in the region close to the superconducting onset temperature. The temperature dependencies ρxx ∝ T and ρyx ∝ 1/T have been observed for HgRe-1212 thin films…
Microrefrigeration by normal-metal/ insulator/superconductor tunnel junctions
1997
Abstract A normal-metal/insulator/superconductor (NIS) tunnel junction can be applied to cool electrons by biasing the junction suitably with external voltage. Because of the symmetry with bias voltage, two NIS junctions in series can form an efficient microrefrigerator. So far our SINIS microrefrigerator has been capable of reaching electronic temperatures of about 100 mK starting from 300 mK. To achieve appreciable refrigeration of the underlying lattice, microrefrigerator must be thermally decoupled from the bulk substrate. We have demonstrated experimentally the reduction of lattice temperature of a few mK at 200 mK by extending the normal electrode on a thin dielectric membrane. Method…
Application of superconductor-semiconductor Schottky barrier for electron cooling
2003
Abstract Electronic cooling in superconductor–semiconductor–superconductor structures at sub kelvin temperatures has been demonstrated. Effect of the carrier concentration in the semiconductor on performance of the micro-cooler has been investigated.
Vortex motion in Nb/PdNi/Nb trilayers: new aspects in the flux flow state
2011
We study the dynamics of vortex lines in Supercondutor/Ferromagnet/Superconductor (SFS) heterostructures at microwave frequencies. We have employed swept-frequency, Corbino-disk and resonant, dielectric-resonator techniques to obtain the field and temperature dependence of the vortex-state parameters. We concentrate here on the genuine flux-flow resistivity $\rho_{ff}$, that we access at subcritical currents using a sufficiently high driving frequency. We find that $\rho_{ff}$ does not follow the well-known Bardeen-Stephen model. Instead, it is well described by a full time-dependent Ginzburg-Landau expression at very thin F layer thickness, but changes to a previously unreported field-depe…
Preparation, scaling behavior of activation energy, Hall effect, and flux-flow anisotropy of (Hg0.9Re0.1)Ba2CaCu2O6+δHTS thin films
2004
Abstract We have prepared fully textured (Hg0.9Re0.1)Ba2CaCu2O6+δ (HgRe-1212) thin films by pulsed laser deposition (PLD) and post-annealing. The films exhibit sharp superconducting transitions at Tc=124 K with transition width ΔTc≃2 K. Conditions for reproducible film preparation have been found. The resistive transitions have been investigated in magnetic fields up to 8 T (parallel to the c-axis) and 10 T (perpendicular to the c-axis). We have determined the activation energy of thermally activated flux-motion for both magnetic field orientations. The Hall resistivity (ρxy) of HgRe-1212 superconductor thin films has been measured in the ab-plane at 8 T. In the mixed state a power-law beha…
Trapping of quasiparticles of a nonequilibrium superconductor
2000
We have performed experiments where hot electrons are extracted from a normal metal into a superconductor through a tunnel junction. We have measured the cooling performance of such NIS junctions, especially in the cases where another normal metal electrode, a quasiparticle trap, is attached to the superconductor at different distances from the junction in direct metal-to-metal contact or through an oxide barrier. The direct contact at a submicron distance allows superior thermalization of the superconductor. We have analyzed theoretically the heat transport in this system. From both experiment and theory, it appears that NIS junctions can be used as refrigerators at low temperatures only w…
Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling
2001
Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor–semiconductor–superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron–phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect.
NIS chip refrigeration
1999
A normal-metal/insulator/superconductor (NIS) tunnel junction can be applied to cool electrons by biasing the junction suitably with external voltage. Two NIS junctions in series can form an efficient microrefrigerator because of the symmetry with bias voltage. Our SINIS microrefrigerator has been capable of reaching electronic temperatures of about 100 mK starting from 300 mK. To achieve appreciable refrigeration of the underlying lattice, the microrefrigerator must be thermally decoupled from the bulk substrate. We have demonstrated experimentally the reduction of lattice temperature by 23 mK at 180 mK by extending the normal electrode on a thin dielectric membrane with four suspended bri…
Complete stabilization and improvement of the characteristics of tunnel junctions by thermal annealing
2006
We have observed that submicron sized Al--AlO{$_x$}--Al tunnel junctions can be stabilized completely by annealing them in vacuum at temperatures between $350^{\circ}$C and $450^{\circ}$C. In addition, low temperature characterization of the samples after the annealing treatment showed a marked improvement of the tunneling characteristics due to disappearance of unwanted resonances in the current. Charging energy, tunneling resistance, barrier thickness and height all increase after the treatment. The superconducting gap is not affected, but supercurrent is reduced in accordance with the increase of tunneling resistance.
Proximity-induced Josephson-quasiparticle process in a single-electron transistor
1998
We have performed the first experiments in a superconductor - normal metal - superconductor single electron transistor in which there is an extra superconducting strip partially overlapping the normal metal island in good metal-to-metal contact. Superconducting proximity effect gives rise to current peaks at voltages below the quasiparticle threshold. We interpret these peaks in terms of the Josephson-quasiparticle process and discuss their connection with the proximity induced energy gap in the normal metal island.