Search results for "Hardware_PERFORMANCEANDRELIABILITY"
showing 10 items of 91 documents
Lumped parameter approach of nonlinear networks with transistors
1991
In this chapter we study the lumped parameter modelling of a large class of circuits composed of bipolar transistors, junction diodes and passive elements (resistors, capacitors, inductors). All these elements are nonlinear: the semiconductor components are modelled by “large signal” equivalent schemes, the capacitors and inductors have monotone characteristics while the resistors can be included in a multiport which also has a monotone description.
Advanced time-stamped total data acquisition control front-end for MeV ion beam microscopy and proton beam writing
2013
Many ion-matter interactions exhibit [email protected] time dependences such as, fluorophore emission quenching and ion beam induced charge (IBIC). Conventional event-mode MeV ion microbeam data acquisition systems discard the time information. Here we describe a fast time-stamping data acquisition front-end based on the concurrent processing capabilities of a Field Programmable Gate Array (FPGA). The system is intended for MeV ion microscopy and MeV ion beam lithography. The speed of the system (>240,000 events s^-^1 for four analogue to digital converters (ADC)) is limited by the ADC throughput and data handling speed of the host computer.
Nanorings and rods interconnected by self-assembly mimicking an artificial network of neurons
2013
[EN] Molecular electronics based on structures ordered as neural networks emerges as the next evolutionary milestone in the construction of nanodevices with unprecedented applications. However, the straightforward formation of geometrically defined and interconnected nanostructures is crucial for the production of electronic circuitry nanoequivalents. Here we report on the molecularly fine-tuned self-assembly of tetrakis-Schiff base compounds into nanosized rings interconnected by unusually large nanorods providing a set of connections that mimic a biological network of neurons. The networks are produced through self-assembly resulting from the molecular conformation and noncovalent intermo…
Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter
2021
In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …
Single electron transistor fabricated on heavily doped silicon-on-insulator substrate
2001
Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
Controlling the mode of operation of organic transistors through side chain engineering
2016
Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode…
CNT-based RFID passive gas sensor
2011
Summary form only given, as follows. Single-wall carbon nanotube (CNT) is examined for the design of a passive and maintenance-free wireless RFID sensor. CNT buckypaper is characterized from a dielectric and a sensitivity point of view, using an indirect way, by using antenna measurement and simulations in a controlled medium. A CNT-based prototype RFID tag is then described as the featured maintenance free sensor and experimentally verified for its applicability and sensitivity towards NH3.
Enhancing the Sniper Simulator with Thermal Measurement
2014
This paper presents the enhancement of the Sniper multicore / manycore simulator with thermal measurement possibilities using the HotSpot simulator. We present a plugin that interacts with Sniper to retrieve simulation data (integration areas and power consumptions) and calls HotSpot to compute the corresponding thermal results. The plugin also builds a two dimensional floorplan for the simulated microarchitecture. Furthermore we plan to integrate the simulation methodology presented here into an automatic design space exploration process using the multi-objective optimization tool called FADSE. Keywords—multicore; simulator; power consumption; thermal; HotSpot; Sniper
Nonlinear analysis of classical phase-locked loops in signal's phase space
2014
Abstract Discovery of undesirable hidden oscillations, which cannot be found by the standard simulation, in phase-locked loop (PLL) showed the importance of consideration of nonlinear models and development of rigorous analytical methods for their analysis. In this paper for various signal waveforms, analytical computation of multiplier/mixer phase-detector characteristics is demonstrated, and nonlinear dynamical model of classical analog PLL is derived. Approaches to the rigorous nonlinear analysis of classical analog PLL are discussed.
Programming options for nanocrystal MOS memories
2003
Nanocrystal memories represent a promising candidate for the scaling of FLASH memories. In these devices, the charge is not stored in a continuous floating gate but in a discontinuous layer composed by numerous discrete silicon quantum dots well separated one from the other.The nanocrystals of radius of few nanometers are realized by chemical vapor deposition (CVD) of silicon on the tunnel oxide of 2.8 nm of thickness. These islands have been coated with a control oxide of 7 nm formed by CVD and incorporated in Metal-Oxide-Semiconductor structure. The devices are programmed and erased by tunnelling using low voltages and fast times. In addition, the programming can be easily achieved also b…