6533b7d9fe1ef96bd126c2cf
RESEARCH PRODUCT
Single electron transistor fabricated on heavily doped silicon-on-insulator substrate
Alfred ForchelJukka P. PekolaJouni AhopeltoMonika EmmerlingMartin KampAlexander SavinAntti ManninenMika PrunnilaJari Kauranensubject
Materials scienceSiliconbusiness.industryTransistorDopingGeneral EngineeringGeneral Physics and AstronomySilicon on insulatorCoulomb blockadechemistry.chemical_elementNanotechnologySubstrate (electronics)Hardware_PERFORMANCEANDRELIABILITYGate voltagelaw.inventionchemistryModulationlawHardware_INTEGRATEDCIRCUITSOptoelectronicsbusinessHardware_LOGICDESIGNdescription
Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2001-03-01 | Japanese Journal of Applied Physics |