Search results for "Heterojunction"
showing 10 items of 227 documents
Atlas for the properties of elemental two-dimensional metals
2018
Common two-dimensional (2D) materials have a layered three-dimensional (3D) structure with covalently bonded, atomically thin layers held together by weak van der Waals forces. However, in a recent transmission electron microscopy experiment, atomically thin 2D patches of iron were discovered inside a graphene nanopore. Motivated by this discovery, we perform a systematic density-functional study on atomically thin elemental 2D metal films, using 45 metals in three lattice structures. Cohesive energies, equilibrium distances, and bulk moduli in 2D are found to be linearly correlated to the corresponding 3D bulk properties, enabling the quick estimation of these values for a given 2D metal a…
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC
2022
In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS2 on 4H-SiC(0001) surfaces with different doping levels, i.e., n− epitaxial doping (≈1016 cm−3) and n+ ion implantation doping (>1019 cm−3). After assessing the excellent thickness uniformity (≈3L-MoS2) and conformal coverage of the PLD-grown films by Raman mapping and transmission electron microscopy, the current injection across the heterojunctions is investigated by temperature-dependent current–voltage characterization of the diodes and by nanoscale current mapping with conductive atomic force microscopy. A wide tunability of the transport properties is shown by the SiC surface dopi…
Vapor phase epitaxy of Hg1−xCdxI2 layers on CdTe substrates
1997
Vapor phase epitaxy (VPE) has been studied to grow Hg1 − xCdxI2 epitaxial layers on CdTe bulk substrates. The effect of the VPE growth conditions on the morphology, composition and crystalline quality of Hg1 − xCdxI2CdTe heterostructures has been investigated. It has been shown that 10–30 μm thick Hg1 − xCdxI2 layers can be successfully grown using an α-HgI2 polycrystalline source under isothermal conditions at a temperature in the range 170–240°C for the time period 20–50 h. Interestingly, the VPE growth was found to consist of two successiv stages with different kinetics as follows: (1) a fast growth of an HgI2 platelet layer on the CdTe substrate surface and (2) a slow growth of an Hg1 −…
Strain-mediated electric-field control of exchange bias in a Co90Fe10/BiFeO3/SrRuO3/PMN-PT heterostructure.
2015
AbstractThe electric-field (E-field) controlled exchange bias (EB) in a Co90Fe10/BiFeO3 (BFO)/SrRuO3/PMN-PT heterostructure has been investigated under different tensile strain states. The in-plane tensile strain of the BFO film is changed from +0.52% to +0.43% as a result of external E-field applied to the PMN-PT substrate. An obvious change of EB by the control of non-volatile strain has been observed. A magnetization reversal driven by E-field has been observed in the absence of magnetic field. Our results indicate that a reversible non-volatile E-field control of a ferromagnetic layer through strain modulated multiferroic BFO could be achieved at room temperature.
Photocatalytic activity of binary and ternary SnO2–ZnO–ZnWO4 nanocomposites
2015
Binary and ternary SnO2-ZnO-ZnWO4 nanocomposites were prepared by a sol-gel route. The photocatalytic activity of the samples was evaluated through the decomposition of 4-nitrophenol and partial oxidation of 4-methoxybenzyl alcohol to p-anisaldehyde. All the mixed catalysts revealed higher photoactivity than bare ZnO, SnO2 or ZnWO4 and the best performances were exhibited by the binary nanocomposites. The high photocatalytic activity was explained by the presence of heterojunctions among different semiconductors that enhance the separation of the photogenerated electron-hole pairs, hindering their recombination. As a general consideration, an essential role was played by the electronic feat…
Plasmon-assisted spin transition in gold nanostar@spin crossover heterostructures
2021
Aquí presentamos el diseño de nanopartículas core@shell formadas por un núcleo de nanoestrella de Au metálico y una capa cruzada de espín basada en el polímero de coordinación [Fe(Htrz)2(trz)](BF4). Este procedimiento es general y se ha extendido a otras morfologías metálicas (nanovarillas, nanotriángulos). Gracias al efecto fototérmico derivado de las propiedades plasmónicas de la nanoestrella de Au, el 60 % de los centros de hierro experimentan una transición de espín térmico dentro de la histéresis térmica provocada por una irradiación de baja intensidad con un láser de 808 nm. En comparación con otras morfologías de Au, la gran ventaja de la forma de nanoestrella surge de los puntos cal…
A Novel Gas Sensor Transducer Based on Phthalocyanine Heterojunction Devices
2007
Abstract: Experimental data concerning the changes in the current-voltage (I-V) perfor-mances of a molecular material-based heterojunction consisting of hexadecafluorinated nickel phthalocyanine (Ni(F 16 Pc)) and nickel phthalocyanine (NiPc), (Au|Ni(F 16 Pc)|NiPc|Al) are introduced as an unprecedented principle of transduction for gas sensing performances. The respective n - and p -type doped-insulator behaviors of the respective materials are supported, owing to the observed changes in surface potential (using the Kelvin probe method) after submission to electron donor (ammonia) and electron acceptor gases (ozone). On the other hand, the bilayer device exhibits strong variations in the bui…
Comparative ab initio calculations of SrTiO3/BaTiO3 and SrZrO3/PbZrO3 (0 0 1) heterostructures
2016
Abstract Using a B3PW hybrid exchange–correlation functional within the density functional theory (DFT) we calculated from the first principles the electronic structure of BaTiO 3 /SrTiO 3 and PbZrO 3 /SrZrO 3 (0 0 1) interfaces. The optical band gap of both BaTiO 3 /SrTiO 3 and PbZrO 3 /SrZrO 3 (0 0 1) interfaces depends mostly from BaO or TiO 2 and SrO or ZrO 2 termination of the upper layer, respectively. Based on the results of our calculations we predict increase of the Ti–O and Zr–O chemical bond covalency near the SrTiO 3 /BaTiO 3 and SrZrO 3 /PbZrO 3 (0 0 1) interfaces as compared to the BaTiO 3 and PbZrO 3 bulk.
Theoretical Study of the Charge Transfer Exciton Binding Energy in Semiconductor Materials for Polymer:Fullerene-Based Bulk Heterojunction Solar Cells
2019
Recent efforts and progress in polymer solar cell research have boosted the photovoltaic efficiency of the technology. This efficiency depends not only on the device architecture but also on the material properties. Thus, insight into the design of novel semiconductor materials is vital for the advancement of the field. This paper looks from a theoretical viewpoint into two of the factors for the design of semiconductor materials with applications to bulk heterojunction solar cells: the charge transfer exciton binding energy and the nanoscale arrangement of donor and acceptor molecules in blend systems. Being aware that the exciton dissociation of local excitons in charge transfer states in…
Humidity Insensitive Conductometric Sensors for Ammonia Sensing
2014
Interest in molecular materials has been driven in large part by their various and prosperous applications, especially in the domain of organic electronics, where they offer many advantages as well as alternative approaches compared to their inorganic counterparts. Most of conductometric transducers are resistors[[ and transistors[[[, but rarely diodes[6]. In our laboratory, we designed and characterized new molecular material based devices. Molecular Semiconductor Doped Insulator (MSDI) heterojunctions were built around a heterojunction between a Molecular Semiconductor (MS) and a Doped Insulator (DI)[7][8]. This new device exhibits interesting electronic properties that allow ammonia sens…