Search results for "Hom"

Ceļš: Latvijas Universitātes Teoloģijas fakultātes teoloģisks un kultūrvēsturisks izdevums, Nr. 59

2009

Finansiālais atbalstītājs - Ziemeļelbas Evaņģēliski luteriskajai baznīca (Vācija)

THE ROLE OF CALCIUM AS A METALLOTHERAPEUTIC DRUG

2005

Dual attachment pairs in categorically-algebraic topology

2011

[EN] The paper is a continuation of our study on developing a new approach to (lattice-valued) topological structures, which relies on category theory and universal algebra, and which is called categorically-algebraic (catalg) topology. The new framework is used to build a topological setting, based in a catalg extension of the set-theoretic membership relation "e" called dual attachment, thereby dualizing the notion of attachment introduced by the authors earlier. Following the recent interest of the fuzzy community in topological systems of S. Vickers, we clarify completely relationships between these structures and (dual) attachment, showing that unlike the former, the latter have no inh…

Derivation of a Homogenized Two-Temperature Model from the Heat Equation

2014

This work studies the heat equation in a two-phase material with spherical inclusions. Under some appropriate scaling on the size, volume fraction and heat capacity of the inclusions, we derive a coupled system of partial differential equations governing the evolution of the temperature of each phase at a macroscopic level of description. The coupling terms describing the exchange of heat between the phases are obtained by using homogenization techniques originating from [D. Cioranescu, F. Murat: Coll\`ege de France Seminar vol. 2. (Paris 1979-1980) Res. Notes in Math. vol. 60, pp. 98-138. Pitman, Boston, London, 1982.]

p −1-Linear Maps in Algebra and Geometry

2012

At least since Habousch’s proof of Kempf’s vanishing theorem, Frobenius splitting techniques have played a crucial role in geometric representation theory and algebraic geometry over a field of positive characteristic. In this article we survey some recent developments which grew out of the confluence of Frobenius splitting techniques and tight closure theory and which provide a framework for higher dimension geometry in positive characteristic. We focus on local properties, i.e. singularities, test ideals, and local cohomology on the one hand and global geometric applicatioms to vanishing theorems and lifting of sections on the other.

Filament sets and decompositions of homogeneous continua

2007

Abstract This paper applies the concepts introduced in the article: Filament sets and homogeneous continua [J.R. Prajs, K. Whittington, Filament sets and homogeneous continua, Topology Appl. 154 (8) (2007) 1581–1591, doi:10.1016/j.topol.2006.12.005 ] to decompositions of homogeneous continua. Several new or strengthened results on aposyndesis are given. Newly defined decompositions are discussed. A proposed classification scheme for homogeneous continua is shown to be mostly invariant under Jones' aposyndetic decomposition.

Pressure-induced instability of the fergusonite phase of EuNbO4 studied by in situ Raman spectroscopy, x-ray diffraction, and photoluminescence spect…

2020

In this article, we present high-pressure experimental investigations on EuNbO4, an interesting technologically important material, using synchrotron based x-ray powder diffraction, Raman spectroscopy, and europium photoluminescence measurements up to 39.2, 31.6, and 32.4 GPa, respectively. All three techniques show the stability of the ambient monoclinic phase until 20 GPa. Beyond that, a pressure-induced structural phase transition takes place with the coexistence of two phases over a wide pressure range. The structure of the high-pressure phase has been determined as orthorhombic (space group: Imma) with a volume discontinuity of nearly 9% at the transition indicating the nature of trans…

Tailoring the anomalous Hall effect of SrRuO$_3$ thin films by strain: a first principles study

2021

Motivated by the recently observed unconventional Hall effect in ultra-thin films of ferromagnetic SrRuO$_3$ (SRO) we investigate the effect of strain-induced oxygen octahedral distortion in the electronic structure and anomalous Hall response of the SRO ultra-thin films by virtue of density functional theory calculations. Our findings reveal that the ferromagnetic SRO films grown on SrTiO$_3$ (in-plane strain of $-$0.47$\%$) have an orthorhombic (both tilting and rotation) distorted structure and with an increasing amount of substrate-induced compressive strain the octahedral tilting angle is found to be suppressed gradually, with SRO films grown on NdGaO$_3$ (in-plane strain of $-$1.7$\%$…

Structure and dielectric properties of Na0.5Bi0.5TiO3-CaTiO3 solid solutions

2016

Despite wide studies of Na0.5Bi0.5TiO3, structure of this material and its connection with the observed physical properties still raise numerous questions due to mutually contradicting results obtained. Here, structure and dielectric properties of poled and unpoled Na0.5Bi0.5TiO3-CaTiO3 solid solutions are studied, projecting the obtained concentration dependence of structure and dielectric properties on pure Na0.5Bi0.5TiO3 as the end member of this material group. X-ray diffraction patterns for Na0.5Bi0.5TiO3-CaTiO3 solid solutions reveal dominating of an orthorhombic Pnma phase, even for the compositions approaching the end composition (Na0.5Bi0.5TiO3), whereas structure of pure Na0.5Bi0.…

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

2019

Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.