Search results for "ICON"
showing 10 items of 3539 documents
"Le traitement pictural du temps dans la poétique d'Erri De Luca"
2007
International audience
CCDC 1995923: Experimental Crystal Structure Determination
2020
Related Article: Dinh Cao Huan Do, Petra Vasko, M. Ángeles Fuentes, Jamie Hicks, Simon Aldridge|2020|Dalton Trans.|49|8701|doi:10.1039/D0DT01447H
Common fixed points of g-quasicontractions and related mappings in 0-complete partial metric spaces
2012
Abstract Common fixed point results are obtained in 0-complete partial metric spaces under various contractive conditions, including g-quasicontractions and mappings with a contractive iterate. In this way, several results obtained recently are generalized. Examples are provided when these results can be applied and neither corresponding metric results nor the results with the standard completeness assumption of the underlying partial metric space can. MSC:47H10, 54H25.
Global Lp -integrability of the derivative of a quasiconformal mapping
1988
Let f be a quasiconformal mapping of an open bounded set U in Rn into Rn . Then f′ belongs to Lp(U) for some p > n provided that f satisfies (a) U is a uniform domain and fU is a John domain or (b) f is quasisymmetric and U satisfies a metric plumpness condition.
The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires
2015
We experimentally investigate the influence of AlN buffer growth on the nucleation and the polarity of a self-organized assembly of GaN nanowires (NWs) grown on Si. Two complementary growth mechanisms for AlN buffer deposited on Si are demonstrated. Both emphasize the aggregation of Si on the AlN surface and the growth of large cubic crystallites, namely, AlN pedestals. Further growths of GaN NWs assembly reveal that the GaN 2D layer found at the bottom of the NW assembly is the result of the coalescence of Ga-polar pyramids, whereas AlN pedestals are observed as preferential but not exclusive NW nucleation sites. NWs are N-polar or exhibit inversion domains with a Ga-polar core/N-polar she…
FPGA based digital lock-in amplifier for fNIRS systems
2018
Lock-In Amplifiers (LIA) represent a powerful technique helping to improve signals detectability when low signal to noise ratios are experienced. Continuous Wave functional Near Infrared Spectroscopy (CW-fNIRS) systems for e-health applications usually suffer of poor detection due to the presence of strong attenuations of the optical recovering path and therefore small signals are severely dipped in a high noise floor. In this work a digital LIA system, implemented on a Zynq® Field Programmable Gate Array (FPGA), has been designed and tested to verify the quality of the developed solution, when applied in fNIRS systems. Experimental results have shown the goodness of the proposed solutions.
Phase segregation in Mg$_{x}$Zn$_{1-x}$O probed by optical absorption and photoluminescence at high pressure
2017
The appearance of segregated wurtzite Mg$_x$Zn$_{1-x}$O with low Mg content in thin films with $x>0.3$ affected by phase separation, cannot be reliably probed with crystallographic techniques owing to its embedded nanocrystalline configuration. Here we show a high-pressure approach which exploits the distinctive behaviors under pressure of wurtzite Mg$_x$Zn$_{1-x}$O thin films with different Mg contents to unveil phase segregation for $x>0.3$. By using ambient conditions photoluminescence (PL), and with optical absorption and PL under high pressure for $x=0.3$ we show that the appearance of a segregated wurtzite phase with a magnesium content of x $\sim$ 0.1 is inherent to the wurtzit…
Photo-electrical and transport properties of hydrothermal ZnO
2016
We performed the studies of optical, photoelectric, and transport properties of a hydrothermal bulk n-type ZnO crystal by using the contactless optical techniques: photoluminescence, light-induced transient grating, and differential reflectivity. Optical studies revealed bound exciton and defect-related transitions between the donor states (at ∼60 meV and ∼240 meV below the conduction band) and the deep acceptor states (at 0.52 eV above the valence band). The acceptor state was ascribed to VZn, and its thermal activation energy of 0.43 eV was determined. A low value of carrier diffusion coefficient (∼0.1 cm2/s) at low excitations and temperatures up to 800 K was attributed to impact the rec…
Partial discharges at different voltage waveshapes: Comparison between two different acquisition systems
2018
In modern HV apparatuses the wide use of electronic converters, increase the stress on the involved insulation systems and thus affect the reliability of the whole power grid. Additionally, such non-sinusoidal voltage shapes contain high gradient flanks that create problems in the detection of partial discharge (PD) activity. The aim of this paper is to discuss the methodology on how to suitably approach PD detection in insulation systems exposed to various voltage waveshapes in general by comparing two different measuring systems. The first one, equipped with a resonant PD decoupler, designed specifically for detection at typical power electronic waveshapes and the other one, based on an a…
Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition
2020
Silicon surface passivation by gallium oxide (Ga2O3) thin films deposited by thermal- and plasma-enhanced atomic layer deposition (ALD) over a broad temperature range from 75 °C to 350 °C is investigated. In addition, the role of oxidant (O3 or O-plasma) pulse lengths insufficient for saturated ALD-growth is studied. The material properties are analyzed including the quantification of the incorporated hydrogen. We find that oxidant dose pulses insufficient for saturation provide for both ALD methods generally better surface passivation. Furthermore, different Si surface pretreatments are compared (HF-last, chemically grown oxide, and thermal tunnel oxide). In contrast to previous reports, t…