Search results for "INTERFACE"

showing 10 items of 2139 documents

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

2015

ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). T…

Materials scienceta114Scanning electron microscopeAnalytical chemistryNucleationthin film growthCrystal growthSurfaces and InterfacesCondensed Matter PhysicsRutherford backscattering spectrometrySurfaces Coatings and FilmsElastic recoil detectionCrystallinityAtomic layer depositionSurface roughnessta116zinc oxide filmsJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

2012

The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film remova…

Materials scienceta221Analytical chemistryplasma etchingAtomic layer depositionEtch pit densityEtching (microfabrication)SputteringAIN filmsetchingta318Reactive-ion etchingThin filmta216ta116plasma depositionPlasma etchingta213ta114business.industryPhysicsSurfaces and Interfacesatomikerroskasvatusplasma materials processingCondensed Matter PhysicsSurfaces Coatings and Filmsplasmakasvatusthin filmsOptoelectronicsbusinessBuffered oxide etch
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Aluminum oxide from trimethylaluminum and water by atomic layer deposition:The temperature dependence of residual stress, elastic modulus, hardness a…

2014

Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD enables conformal growth on 3-dimensional structures at relatively low temperatures. For MEMS device design and fabrication, the understanding of stress and mechanical properties such as elastic modulus, hardness and adhesion of thin film is crucial. In this work a comprehensive characterization of the stress, elastic modulus, hardness and adhesion of ALD aluminum oxide (Al2O3) films grown at 110-300 C from trimethylaluminum and water is presented. Film stress was analyzed by wafer curvature measurements, elastic modulus by nanoindentation and surface-acoustic wave measurements, hardness by na…

Materials scienceta221Residual stressAluminum oxideStress (mechanics)Atomic layer depositionEllipsometryResidual stressHardnessMaterials Chemistryta318Thin filmComposite materialta216ta116Elastic modulusta213ta114Atomic layer depositionMetals and AlloysSurfaces and InterfacesNanoindentationSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsElastic recoil detectionAdhesionElastic modulus
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Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

2008

This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100 °C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5:1, 2:1 and 1:1 Ar:N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed a…

Materials sciencetantalum nitrideAnalytical chemistryTantalumchemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryCondensed Matter PhysicsGrain sizeSurfaces Coatings and Filmschemistry.chemical_compoundTantalum nitridechemistryX-ray photoelectron spectroscopyElectrical resistivity and conductivitySputteringXPSMaterials ChemistryAFMThin filmplastic electronicsSIMSSheet resistanceplastic electronics tantalum nitride XPS AFMSIMSSurface and Interface Analysis
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Colloidal lithography and Metal-Organic Chemical Vapor Deposition process integration to fabricate ZnO nanohole arrays

2010

A complete set up of optimal process conditions for an effective colloidal lithography/catalyst assisted MOCVD process integration is presented. It mainly focuses on the determination of the deposition temperature threshold for ZnO Metal-Organic Chemical Vapour Deposition (MOCVD) as well as the concentration of metal-organic silver (Ag) catalyst. Indeed, the optimization of such process parameters allows to tailor the ZnO film morphology in order to make the colloidal lithography/catalyst assisted MOCVD approach a valuable bottom up method to fabricate bi-dimensional ordered ZnO nanohole arrays. (C) 2010 Elsevier B.V. All rights reserved.

Materials sciencezinc oxide; Nanowires and nanohole arrays; Colloidal lithographyMetals and AlloysNanowirezinc oxideNanotechnologyZnO; Catalyst; Nanowires; Nanohole array; Colloidal lithography; MOCVDSurfaces and InterfacesChemical vapor depositionSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCatalysisNanowireNanohole arrayScientific methodProcess integrationMOCVDMaterials ChemistryNanowires and nanohole arraysZnOColloidal lithographyMetalorganic vapour phase epitaxyCatalystThin filmLithography
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A Friendly-Biological Reactor SIMulator (BioReSIM) for studying biological processes in wastewater treatment processes

2014

Biological processes for wastewater treatments are inherently dynamic systems because of the large variations in the influent wastewater flow rate, concentration composition and the adaptive behavior of the involved microorganisms. Moreover, the sludge retention time (SRT) is a critical factor to understand the bioreactor performances when changes in the influent or in the operation conditions take place. Since SRT are usually in the range of 10-30 days, the performance of biological reactors needs a long time to be monitored in a regular laboratory demonstration, limiting the knowledge that can be obtained in the experimental lab practice. In order to overcome this lack, mathematical model…

Mathematical modelbusiness.industryComputer scienceRotating biological contactorMathematical modeling Wastewater treatment Sequencing Batch Reactor Rotating Biological Contactorslcsh:Education (General)SoftwareWastewaterOrdinary differential equationBioreactorSewage treatmentProcess engineeringbusinesslcsh:Llcsh:L7-991Graphical user interfacelcsh:Education
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A new approach for critical resources allocation

2009

This paper presents a solution based on Artificial Intelligence using Multi-objective Genetic Algorithms to optimize the allocation of teachers and classrooms. The implementation was created in order to optimize the process in both cases, allowing them to compete so as to establish a balance and arrive at a feasible solution quickly and efficiently.

Mathematical optimizationApplication programming interfaceOrder (exchange)Computer scienceProcess (engineering)Resource allocationGenetic operatorFitness score
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A penalty-based finite element interface technology

2002

Abstract An effective and robust interface element technology able to connect independently modeled finite element subdomains is presented. This method has been developed using the penalty constraints and allows coupling of finite element models whose nodes do not coincide along their common interface. Additionally, the present formulation leads to a computational approach that is very efficient and completely compatible with existing commercial software. A significant effort has been directed toward identifying those model characteristics (element geometric properties, material properties and loads) that most strongly affect the required penalty parameter, and subsequently to developing si…

Mathematical optimizationCommercial softwareEngineeringInterface (Java)Finite element limit analysisbusiness.industryMechanical EngineeringPenalty methodLagrange multiplierMixed finite element methodComposite laminatesTopologyFinite element methodComputer Science ApplicationsSettore ING-IND/14 - Progettazione Meccanica E Costruzione Di MacchineFinite elementModeling and SimulationSubstructureGlobal/local analysiGeneral Materials SciencePenalty methodbusinessInterface elementCivil and Structural EngineeringExtended finite element methodComputers & Structures
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NAUTILUS Navigator : free search interactive multiobjective optimization without trading-off

2019

We propose a novel combination of an interactive multiobjective navigation method and a trade-off free way of asking and presenting preference information. The NAUTILUS Navigator is a method that enables the decision maker (DM) to navigate in real time from an inferior solution to the most preferred solution by gaining in all objectives simultaneously as (s)he approaches the Pareto optimal front. This means that, while the DM reaches her/his most preferred solution, (s)he avoids anchoring around the starting solution and, at the same time, sees how the ranges of the reachable objective function values shrink without trading-off. The progress of the motion towards the Pareto optimal front is…

Mathematical optimizationControl and Optimization0211 other engineering and technologiesAnchoringpäätöksentukijärjestelmät02 engineering and technologyManagement Science and Operations ResearchMulti-objective optimizationMotion (physics)Set (abstract data type)käyttöliittymätPreference (economics)MathematicsGraphical user interface021103 operations researchbusiness.industryApplied Mathematicsgraphical user interfaceFunction (mathematics)interactive methodsDecision makermonitavoiteoptimointiComputer Science Applicationsnavigointiinteraktiivisuusmulticriteria decision makingbusinesstrade-off free
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Frequency constrained optimal Power Flow based on Glow-worm Swarm Optimization in Islanded Microgrids

2015

This work presents an application of a swarm optimization method to solve the optimal power flow problem taking into account the constraints of frequency and line ampacity in three-phase islanded Microgrids. Each generation unit is equipped with a Power Electronics Interface. In the considered formulation, the droop control parameters are considered as variables to be adjusted by a higher control level, while the frequency is kept in rated bounds. Another typical constraint for OPF formulation, the max ampacity of each line, is also considered. Two case studies with different dimensions and electrical features have been considered and the obtained results show the efficiency of the proposed…

Mathematical optimizationEngineeringfrequency constraintInterface (computing)Islanded microgridglow-worm swarm optimizationBiomedical EngineeringEnergy Engineering and Power TechnologyControl theoryPower electronicsAmpacityVoltage droopthree phase systemsislanded microgridsbusiness.industryRenewable Energy Sustainability and the Environmentline ampacity constraintOptimal power flow; three phase systems; islanded microgrids; glow-worm swarm optimization; frequency constraint; line ampacity constraintParticle swarm optimizationSwarm behaviourConstraint (information theory)Three phase systemSettore ING-IND/33 - Sistemi Elettrici Per L'EnergiaLine (geometry)businessOptimal power flow
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