Search results for "INTERFACES"
showing 10 items of 1258 documents
Influence of titanium-substrate roughness on Ca–P–O thin films grown by atomic layer deposition
2013
Abstract Amorphous Ca–P–O films were deposited on titanium substrates using atomic layer deposition, while maintaining a uniform Ca/P pulsing ratio of 6/1 with varying number of atomic layer deposition cycles starting from 10 up to 208. Prior to film deposition the titanium substrates were mechanically abraded using SiC abrasive paper of 600, 1200, 2000 grit size and polished with 3 μm diamond paste to obtain surface roughness R rms values of 0.31 μm, 0.26 μm, 0.16 μm, and 0.10 μm, respectively. The composition and film thickness of as-deposited amorphous films were studied using Time-Of-Flight Elastic Recoil Detection Analysis. The results showed that uniform films could be deposited on ro…
Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition
2015
ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). T…
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
2012
The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film remova…
Aluminum oxide from trimethylaluminum and water by atomic layer deposition:The temperature dependence of residual stress, elastic modulus, hardness a…
2014
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD enables conformal growth on 3-dimensional structures at relatively low temperatures. For MEMS device design and fabrication, the understanding of stress and mechanical properties such as elastic modulus, hardness and adhesion of thin film is crucial. In this work a comprehensive characterization of the stress, elastic modulus, hardness and adhesion of ALD aluminum oxide (Al2O3) films grown at 110-300 C from trimethylaluminum and water is presented. Film stress was analyzed by wafer curvature measurements, elastic modulus by nanoindentation and surface-acoustic wave measurements, hardness by na…
Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics
2008
This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100 °C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5:1, 2:1 and 1:1 Ar:N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed a…
Colloidal lithography and Metal-Organic Chemical Vapor Deposition process integration to fabricate ZnO nanohole arrays
2010
A complete set up of optimal process conditions for an effective colloidal lithography/catalyst assisted MOCVD process integration is presented. It mainly focuses on the determination of the deposition temperature threshold for ZnO Metal-Organic Chemical Vapour Deposition (MOCVD) as well as the concentration of metal-organic silver (Ag) catalyst. Indeed, the optimization of such process parameters allows to tailor the ZnO film morphology in order to make the colloidal lithography/catalyst assisted MOCVD approach a valuable bottom up method to fabricate bi-dimensional ordered ZnO nanohole arrays. (C) 2010 Elsevier B.V. All rights reserved.
Finite Displacements and Corrotational Interfaces: Consistent formulation and Symmetry of the Stiffness Matrix
2017
Mechanical interfaces are theoretical and computational tools able to properly reproduce then progressive delamination of composite structures. Scientific literature is rich of interface models, mostly developed in small displacements, whereas a few of them assess the problem in a geometrically nonlinear setting. In the present paper interface formulation is rigorously developed in a geometrically nonlinear setting, and the relevant interface constitutive relations are defined in the local reference with normal and tangential axes to the middle surface in the current configuration. The interface is defined as a zero thickness layer with tractions acting between the two connected surfaces. M…
Tribological properties of commercial optical disks estimated from nanoindentation and scratch techniques
2007
Abstract The structure of optical disks is a complex superposition of several layers with different objectives. The most external layer is usually designed with a protective purpose. When the scratch of the substrate occurs, the optical properties of the device decrease inducing a deficiency in the storage or access of data. Nowadays, the latest commercial optical disks exhibit protective coatings made of polymeric materials (copolymers, and polymeric matrix composite materials). The efficiency of these layers depends on a combination of several mechanical properties like hardness and Young's modulus. In this work, a compositional and mechanical study was carried out on four commercial opti…
Heterogeneous structures studied by an interphase elasto-plastic damaging model
2013
Heterogeneous materials present a mechanical response strongly dependent on the static and kinematic phenomena occurring in the constituents and at their joints. At the mesoscopic level the interaction between the units is simulated by mean of apposite mechanical devices such as the zero thickness interface model where contact tractions and displacement discontinuities are the primary static and kinematic variables respectively. In heterogeneous materials the response also depends on joint internal stresses. The introduction of internal stresses brings to the interphase model or an enhancement of the classical zero-thickness interface. With the term 'interphase' we shall mean a layer separa…
Characterization of the interannual and intraseasonal variability of West African vegetation between 1982 and 2002 by means of NOAA AVHRR NDVI data
2007
AbstractThe interannual and intraseasonal variability of West African vegetation over the period 1982–2002 is studied using the normalized difference vegetation index (NDVI) from the Advanced Very High Resolution Radiometer (AVHRR).The novel independent component analysis (ICA) technique is applied to extract the main modes of the interannual variability of the vegetation, among which two modes are worth describing. The first component (IC1) describes NDVI variability over the Sahel from August to October. A strong photosynthetic activity over the Sahel is related to above-normal convection and rainfall within the intertropical convergence zone (ITCZ) in summertime and is partly associated …