Search results for "IRRADIATION"
showing 10 items of 1012 documents
Radiation effects on silica-based preforms and optical fibers-I: Experimental study with canonical samples
2008
International audience; Prototype samples of preforms and associated fibers have been designed and fabricated through MCVD process to investigate the role of fluorine (F) and germanium (Ge) doping elements on the radiation sensitivity of silica-based glasses. We characterized the behaviors of these canonical samples before, during and after 10 keV X-ray irradiation through several spectroscopic techniques, to obtain global information (in situ absorption measurements, electron paramagnetic resonance) or spatially-resolved information (confocal microscopy, absorption and luminescence on preform). These tests showed that, for the Ge-doped fiber and in the 300–900 nm range, the radiation-induc…
Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC
2019
Abstract The upgrade of the tracking detectors for the High Luminosity-LHC (HL-LHC) requires the development of novel radiation hard silicon sensors. The development of Depleted Monolithic Active Pixel Sensors targets the replacement of hybrid pixel detectors with radiation hard monolithic CMOS sensors. We designed, manufactured and tested radiation hard monolithic CMOS sensors in the TowerJazz 180 nm CMOS imaging technology with small electrodes pixel designs. These designs can achieve pixel pitches well below current hybrid pixel sensors (typically 50 × 50 μ m ) for improved spatial resolution. Monolithic sensors in our design allow to reduce multiple scattering by thinning to a total si…
Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation
2020
Abstract The stability of black silicon induced junction photodetectors under high-energy irradiation was tested with 11 MeV protons and 12 MeV electrons using fluence of 1 ⋅ 10 10 protons/cm2 and dose of 67 krad(Si) for protons and electrons, respectively. The energies and dose levels were selected to test radiation levels relevant for space applications. The degradation was evaluated through dark current and external quantum efficiency changes during (within 1 h after each step) and after (some days after) full irradiation sequences. Furthermore, the black silicon photodetectors were compared to planar silicon induced junction and planar silicon pn-junction photodetectors to assess the co…
The nature of the 4.8 eV optical absorption band induced by vacuum-ultraviolet irradiation of glassy SiO2
2000
Abstract The controversial optical absorption band centered at 4.8 eV, which is present in nearly all irradiated silicas, was investigated. It is caused by at least two different defects: non-bridging oxygen hole center (NBOHC) and interstitial ozone (O3). Both species have absorption bands at 4.8 eV, the O3-related band is identified by its susceptibility to bleaching by 4 to 5 eV photons, by a smaller halfwidth and by its independence from the NBOHC-associated 1.9 eV photoluminescence (PL) band. The contribution of NBOHC to the 4.8 eV band is dominant in most cases, while O3 is important in F2 excimer laser-irradiated samples of oxygen-rich glassy SiO2.
The behavior of interstitial oxygen atoms induced by F2 laser irradiation of oxygen-rich glassy SiO2
2002
Abstract Interstitial oxygen atoms in glassy silicon dioxide were created by photolysis of pre-existing interstitial oxygen molecules O 2 with a fluorine excimer laser (7.9 eV). The concentration of atomic oxygen interstitials was indirectly monitored by the disappearance and subsequent recovery of interstitial molecules which were monitored by their 1272 nm photoluminescence band. Most of the oxygen interstitials (>95%) are immobile at room temperature. The onset of their mobility occurs between 200 and 400 °C where around 95% of them recombine to form O 2 molecules. The high stability of interstitial oxygen atoms is consistent with the theoretical prediction that they are incorporated int…
Transient and stable color centers in neutron irradiated MgO
2008
Abstract The transient absorption and luminescence induced by the pulsed electron beam have been investigated in the MgO single crystal containing transition metal ion (Cr, Mn, Fe) impurities and preliminary irradiated by the fast neutrons. It is supposed that the different behavior of the absorption spectra of the MgO samples preliminary irradiated by the different fast neutron fluence is connected with the destruction of the hole centers and with the creation of interstitial protons and the formation of the microphase Mg(OH)2. We assume that the luminescence band at ∼3.2 eV is connected with F+ color centers.
Formation of dislocations in LiF irradiated with 3He and 4He ions
2018
Influence of the irradiation with 13.5 MeV 3He and 5 MeV 4He ions on the micro-structure and mechanical properties of LiF single crystals was studied. The depth profiles of nanoindentation, dislocation mobility, selective chemical etching and photoluminescence served for the characterization of damage. Strong ion-induced increase of hardness and decrease in dislocation mobility at the stage of track overlapping due to accumulation of dislocations and other extended defects was observed. At high fluences (1015 ions/cm2) the hardness saturates at about 3.5 GPa (twofold increase in comparison to a virgin crystal) thus confirming high efficiency of light projectiles in modifications of structur…
Ionizing radiation effects on Non Volatile Read Only Memory cells
2012
Threshold voltage (V-th) and drain-source current (I-DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V-th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I-DS with the total irradiation dose. A brief physical explanation is also provided.
ODEPR of indium colour centres in the X- irradiated storage phosphor KBr:In
1995
The results of measurements of the magnetic circular dichroism of the optical absorption (MCDA) and optically detected electron paramagnetic resonance (ODEPR) of X-irradiated KBr :In crystals are presented. The MCDA bands and ODEPR parameters of In°(1) centers and In 2+ centres have been measured. The mechanism of the energy storage in KBr :In crystals is found not to be simply the formation of correlated F centre-In 2+ centre pairs as was assumed previously. Considerable similarities to the storage phosphor BaFBr :Eu 2+ were found for the photostimulated emission and read-out properties.
ODMR of cd impurity centers in gg irradiated BaF2crystals
1995
Abstract The magnetic circular dichroism of the optical absorption (MCD), optically detected magnetic resonance (ODMR) as well as ESR and luminescence in Cd- doped BaF2 crystals γ-irradiated at RT were investigated. MCD signals centered at 295 nm, 290 nm and 365 nm are observed, together with corresponding radiation induced optical absorption bands in the same wavelength regions. The ODMR detected in all these bands is caused by hyperfine (hf) interaction of unpaired spin with Cd− nucleus. Three types of different Cd− related defects have been separated: 1) Cd+ c, represented by the MCD of derivative type centered at 295 nm and hf constant ACd = 480 mT, 2) Cd++c -center having lowered symme…