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Minority Carrier Lifetime Variations in Multicrystalline Silicon Wafers with Temperature and Ingot Position

2017

The minority carrier lifetimes of multicrystalline silicon wafers are mapped using microwave photoconductive decay for different temperatures and ingot positions. Wafers from the top of the ingot display larger areas with lower lifetimes compared to wafers from the bottom. The lifetimes of low-lifetime areas are found to increase with the temperature, while the lifetimes of some high-lifetime areas decrease or remain unchanged. The relative improvement of the low-lifetime areas is considerably larger than the relative change in the high-lifetime areas. We suggest that the above-mentioned observations explain, at least partially, why previous studies have found the relative temperature coeff…

Materials sciencePassivationSiliconbusiness.industrychemistry.chemical_elementCarrier lifetimePlasmachemistryPosition (vector)OptoelectronicsWaferIngotbusinessMicrowave2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
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Temperature Sensitivity of Multicrystalline Silicon Solar Cells

2019

This paper presents an experimental investigation of the temperature coefficients of multicrystalline silicon solar cells. The aim was to determine if some cell parameters can affect positively the temperature sensitivity without detrimental impact on the efficiency. Commercial solar cells with different bulk resistivities, compensation levels, and cell architectures have been studied. We report that the base net doping, the location of the solar cell along the brick and the cell architecture have significant impacts on the temperature coefficients. Moreover, we show how the change in recombination mechanisms along the ingot height affects the temperature coefficients. The compensation leve…

Materials sciencePassivationSiliconchemistry.chemical_element02 engineering and technology010402 general chemistry01 natural scienceslaw.inventionlawAluminiumSolar cellElectrical and Electronic EngineeringIngotCommon emitterbusiness.industryDopingfood and beverages021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical sciencesElectronic Optical and Magnetic MaterialschemistryOptoelectronics0210 nano-technologybusinessVoltageIEEE Journal of Photovoltaics
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Improved stability of black silicon detectors using aluminum oxide surface passivation

2021

Publisher Copyright: © 2021 ESA and CNES We have studied how high-energy electron irradiation (12 MeV, total dose 66 krad(Si)) and long term humidity exposure (75%, 75 °C, 500 hours) influence the induced junction black silicon or planar photodiode characteristics. In our case, the induced junction is formed using n-type silicon and atomic-layer deposited aluminum oxide (Al2O3), which contains a large negative fixed charge. We compare the results with corresponding planar pn-junction detectors passivated with either with silicon dioxide (SiO2) or Al2O3. The results show that the induced junction detectors remain stable as their responsivity remains nearly unaffected during the electron beam…

Materials sciencePassivationalumiinioksidi114 Physical scienceslaw.inventionelektroniikkakomponentitPhotodiodechemistry.chemical_compoundlawpuolijohteetphotodiodeIrradiationAluminum oxidebusiness.industryionisoiva säteilyBlack siliconDetectorblack siliconBlack siliconHumidityHumidityPhotodiodechemistrysäteilyfysiikkailmaisimetOptoelectronicsIrradiationbusinessilmankosteuspiidioksidi
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Passive Behavior and Passivity Breakdown of AISI 304 in LiBr Solutions through Scanning Electrochemical Microscopy

2014

The passive behavior and passivity breakdown of AISI 304 stainless steel in LiBr solutions has been investigated by means of scanning electrochemical microscopy (SECM). The sample generation - tip collection (SG-TC) mode was used to operate the SECM and the tip potential was biased to detect the electroactive species. The evolution of the current at the ultramicroelectrode tip with the applied potential within the passive range was followed at different LiBr concentrations. Results show that the absolute value of the current at the tip increases with the applied potential. Additionally, SECM was also used to detect stable pits formed on the stainless steel surface in a 0.2 M LiBr solution. …

Materials sciencePassivityPassive behaviorSEMICONDUCTING PROPERTIESAUSTENITIC-STAINLESS-STEELSINGENIERIA QUIMICAScanning electrochemical microscopyMaterials ChemistryElectrochemistryPitting corrosionMETALS-BASED CIVILIZATIONLOCALIZED CORROSIONCOATED METALSRenewable Energy Sustainability and the EnvironmentIN-SITUMetallurgyOXIDE-FILMSCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsElectroquímicaELECTRONIC-STRUCTUREPITTING CORROSIONDEGRADATION PROCESSESAcer CorrosióJournal of The Electrochemical Society
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Optical Contrast and Raman Spectroscopy Techniques Applied to Few-Layer 2D Hexagonal Boron Nitride

2019

The successful integration of few-layer thick hexagonal boron nitride (hBN) into devices based on two-dimensional materials requires fast and non-destructive techniques to quantify their thickness. Optical contrast methods and Raman spectroscopy have been widely used to estimate the thickness of two-dimensional semiconductors and semi-metals. However, they have so far not been applied to two-dimensional insulators. In this work, we demonstrate the ability of optical contrast techniques to estimate the thickness of few-layer hBN on SiO2/Si substrates, which was also measured by atomic force microscopy. Optical contrast of hBN on SiO2/Si substrates exhibits a linear trend with the number of h…

Materials sciencePhononGeneral Chemical Engineering02 engineering and technologySubstrate (electronics)010402 general chemistry01 natural sciencesArticlelcsh:ChemistryCondensed Matter::Materials Sciencesymbols.namesakeAb initio quantum chemistry methodsMonolayerGeneral Materials Scienceoptical contrasttwo-dimensional materialsSpectroscopybusiness.industry021001 nanoscience & nanotechnologyHexagonal boron nitride0104 chemical sciencesSemiconductorlcsh:QD1-999Raman spectroscopysymbolsOptoelectronics0210 nano-technologyRaman spectroscopybusinessLayer (electronics)Nanomaterials
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Influence of Phonon dimensionality on Electron Energy Relaxation

2007

We studied experimentally the role of phonon dimensionality on electron-phonon (e-p) interaction in thin copper wires evaporated either on suspended silicon nitride membranes or on bulk substrates, at sub-Kelvin temperatures. The power emitted from electrons to phonons was measured using sensitive normal metal-insulator-superconductor (NIS) tunnel junction thermometers. Membrane thicknesses ranging from 30 nm to 750 nm were used to clearly see the onset of the effects of two-dimensional (2D) phonon system. We observed for the first time that a 2D phonon spectrum clearly changes the temperature dependence and strength of the e-p scattering rate, with the interaction becoming stronger at the …

Materials sciencePhononGeneral Physics and Astronomychemistry.chemical_elementFOS: Physical sciences02 engineering and technologyElectron01 natural scienceschemistry.chemical_compoundCondensed Matter::Materials ScienceTunnel junctionCondensed Matter::Superconductivity0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)010306 general physicsCondensed Matter - Mesoscale and Nanoscale PhysicsCondensed matter physicsRelaxation (NMR)021001 nanoscience & nanotechnologyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCopperMembraneSilicon nitridechemistryScattering rateCondensed Matter::Strongly Correlated Electrons0210 nano-technology
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High-Pressure Softening of the Out-of-Plane A2u(Transverse-Optic) Mode of Hexagonal Boron Nitride Induced by Dynamical Buckling

2019

We investigate the highly anisotropic behavior of the in-plane and out-of-plane infrared-active phonons of hexagonal boron nitride by means of infrared reflectivity and absorption measurements under high pressure. Infrared reflectivity spectra at normal incidence on high-quality single crystals show strict fulfillment of selection rules and an unusually long E1u[transverse-optic (TO)] phonon lifetime. Accurate values of the dielectric constants at ambient pressure ϵ0= 6.96, ϵ∞= 4.95, ϵ 0= 3.37, and ϵ∞ = 2.84 have been determined from fits to the reflectivity spectra. The out-of-plane A2u phonon reflectivity band is revealed in measurements on an inclined facet, and absorption measurements a…

Materials sciencePhononReflectionAstrophysics::Cosmology and Extragalactic Astrophysics02 engineering and technologyNitride010402 general chemistry01 natural sciencesNitridesCondensed Matter::Materials Sciencechemistry.chemical_compoundCondensed Matter::SuperconductivityPhysical and Theoretical ChemistryAbsorption (electromagnetic radiation)AnisotropySofteningAstrophysics::Galaxy AstrophysicsCondensed matter physics021001 nanoscience & nanotechnology0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsBoron nitrideTransverse planeGeneral EnergychemistryBucklingBoron nitride[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other][PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]CalculationsIII-V semiconductorsPhononsSingle crystalsAstrophysics::Earth and Planetary Astrophysics0210 nano-technology
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Heteropolyacid-Based Heterogeneous Photocatalysts for Environmental Application

2015

Polyoxometalates (POMs) are a wide class of discrete nanosized transition metal–oxygen clusters. The synthesis of POMs has received great interest not only because they present intriguing architectures but also because they have potential applications in catalysis, medicine, electrochemistry, materials design or models for self-assembling nanoscale systems. Recently, POMs have also been studied as green and cheap photocatalysts. The potentialities of POMs are attributed to their unique structural features; indeed, POMs are photostable and non-toxic, have oxygen-rich surfaces and excellent redox properties and possess photochemical characteristics similar to those of the semiconductor photoc…

Materials sciencePhotocatalysisNanotechnologySettore CHIM/07 - Fondamenti Chimici Delle TecnologieMaterials designPhotocatalysis heteropolyacid polyoxometalates inorganic clusters semiconductorsCatalysis
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Photoconductive properties of Bi2S3nanowires

2015

The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane…

Materials sciencePhotoconductivityPHOTODETECTORSThin filmsPhotoconductivity spectrumAluminaNanowireGeneral Physics and AstronomyNanotechnologySemiconductor growth02 engineering and technology010402 general chemistryNanofabrication01 natural sciencesSemiconductor materialsTHIN-FILMSThin filmONE-DIMENSIONAL NANOSTRUCTURESArraysPhotocurrentOne-dimensional nanostructuresMembranesNanowire surfaceNanowiresbusiness.industryAnodizingPhotoconductivityPhotodetectors021001 nanoscience & nanotechnologyCharge carrier trappingARRAYS0104 chemical sciencesMembraneNanolithographyIllumination intensityAnodized aluminaPhotoconductive propertiesSemiconductor quantum wiresOptoelectronicsAlumina membranesCharge carrierElectron trapsPhoton energy0210 nano-technologybusinessBismuth compoundsJournal of Applied Physics
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Mechanisms of Strong Photoluminescence from Si Nanocrystals

2011

Photoluminescence mechanisms (models) are reviewed and experimental data are analyzed based on our model, related to direct radiative transitions from the second conduction sub-band to the first one.

Materials sciencePhotoluminescenceAuger effectbusiness.industryGeneral EngineeringPorous siliconThermal conductionsymbols.namesakeNanocrystalsymbolsRadiative transferOptoelectronicsRadiative transitionPhotoluminescence excitationbusinessAdvanced Materials Research
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