Search results for "Icon"

Cone conditions and quasiconformal mappings

1988

Let f be a quasiconformal mapping of the open unit ball B n = {x ∈ R n : | x | < l× in euclidean n-space R n onto a bounded domain D in that space. For dimension n= 2 the literature of geometric function theory abounds in results that correlate distinctive geometric properties of the domain D with special behavior, be it qualitative or quantitative, on the part of f or its inverse. There is a more modest, albeit growing, body of work that attempts to duplicate in dimensions three and above, where far fewer analytical tools are at a researcher’s disposal, some of the successes achieved in the plane along such lines. In this paper we contribute to that higher dimensional theory some observati…

Distortion of quasiconformal maps in terms of the quasihyperbolic metric

2013

Abstract We extend a theorem of Gehring and Osgood from 1979–relating to the distortion of the quasihyperbolic metric by a quasiconformal mapping between Euclidean domains–to the setting of metric measure spaces of Q -bounded geometry. When the underlying target space is bounded, we require that the boundary of the image has at least two points. We show that even in the manifold setting, this additional assumption is necessary.

Quasiconformal mappings and global integrability of the derivative

1991

Quasiextremal distance domains and extension of quasiconformal mappings

1985

Quasihyperbolic boundary conditions and capacity: Hölder continuity of quasiconformal mappings

2001

We prove that quasiconformal maps onto domains which satisfy a suitable growth condition on the quasihyperbolic metric are uniformly continuous when the source domain is equipped with the internal metric. The obtained modulus of continuity and the growth assumption on the quasihyperbolic metric are shown to be essentially sharp. As a tool, we prove a new capacity estimate.

Assemblies of semiconductor quantum dots and light-harvesting-complex II

2010

Abstract A novel hybrid system composed of fluorescent core/shell semiconductor quantum dots and the light harvesting complex II (LHCIIb), a membrane protein of higher plants, has been assembled. Experiments with different mutants show that hybrid formation can be mediated by a C-terminal His 6 tag attached to the protein as well as by positive charges of the first N-terminal amino acids of LHCIIb. Quenching of the quantum dot fluorescence upon binding of LHCIIb was partially attributed to energy transfer from the quantum dots to LHCIIb.

Exciton recombination dynamics inInAs∕InPself-assembled quantum wires

2005

In this work we investigate the exciton recombination dynamics in InAs/ InP semiconductor self-assembled quantum wires, by means of continuous wave and time resolved photoluminescence. The continuous wave photoluminescence results seem to indicate that the temperature quenching of the emission band seems to be more probably due to unipolar thermal escape of electrons towards the InP barrier. On the other hand, the analysis of time resolved photoluminescence reveals that the temperature dependence of the radiative and nonradiative recombination times is mainly determined by the dynamics of excitons localized by disorder shigh energy tail of the PL bandd and strongly localized slow energy tai…

Luminescence of coesite

2015

Coesite is a polymorph modification of crystalline silicon dioxide with a tetrahedral structure. The luminescence of a single crystal of synthetic coesite was studied under excitation using x-rays, an electron beam, and excimer lasers KrF (248 nm), ArF (193 nm) and F2 (157 nm). Luminescence bands in the regions of 2.5 eV and 4.4 eV appear. The blue band is dependent on temperature and is composed of decay kinetics. Three main decay times are revealed, exhibiting luminescence of a different nature in the same range of the spectrum. One is in the ns range of time with a time constant of about 2 ns. The two other decay times are in the regions of 5 μs and 700 μs. The 5 μs component is also see…

Modeling and Characterization of SiPM Parameters at Temperatures between 95 K and 300 K

2017

The modeling and characterization of silicon photomultipliers (SiPMs) in a wide temperature range from 95 K to 300 K is presented. The devices under study had the distinctive feature of forward-biased p-n junctions situated under each pixel as active quenching resistors making them particularly appropriate to be operated at cryogenic temperatures. The voltage drop across the diode in a forward direction was measured for a series of injected currents in this temperature range. It was observed that the characteristics of different SiPM types influence the temperature dependence of the reverse saturation current. The devices were further characterized by low-level light-pulse measurements. The…

On the operation of silicon photomultipliers at temperatures of 1–4 kelvin

2016

Abstract SiPM operation at cryogenic temperatures fails for many common devices. A particular type from Zecotek with deep channels in the silicon substrate instead of quenching resistors was tested at liquid helium temperature. Two similar types were thoroughly characterized from room temperature down to liquid nitrogen temperature by illuminating them with low light levels. At cryogenic temperatures the SiPMs show an unchanged rise-time and a fast recovery time, practically no after-pulses, and exhibit no increased cross-talk probability. Charge collection spectra were measured to extract the pixel gain and its variation, both comparable to room temperature at the same over-voltage. The qu…