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Structural, vibrational and electrical study of compressed BiTeBr
2016
Compresed BiTeBr has been studied from a joint experimental and theoretical perspective. Room-temperature x-ray diffraction, Raman scattering, and transport measurements at high pressures have been performed in this layered semiconductor and interpreted with the help of ab initio calculations. A reversible first-order phase transition has been observed above 6–7 GPa, but changes in structural, vibrational, and electrical properties have also been noted near 2 GPa. Structural and vibrational changes are likely due to the hardening of interlayer forces rather than to a second-order isostructural phase transition while electrical changes are mainly attributed to changes in the electron mobilit…
Generation of Bessel beam arrays through Dammann gratings.
2012
In this work we apply the Dammann grating concept to generate an equal-intensity square array of Bessel quasi-free diffraction beams that diverge from a common center. We generate a binary phase mask that combines the axicon phase with the phase of a Dammann grating. The procedure can be extended to include vortex spiral phases that generate an array of optical pipes. Experimental results are provided by means of a twisted nematic liquid crystal display operating as a binary π phase spatial light modulator.
Holographic recording optimization in amorphous As-Se-S films
2003
The holographic recording parameters of amorphous chalcogenide semiconductor (AChS) thin films under optimization depend on hologram type. So, using self-enhancement effect during recording and wet etching after recording enable possibility to decrease recording energy and increase of signal/noise ratio for embossed holograms. Choosing the appropriate light exposure permit us to achieve equal values of diffraction efficiency (DE) for different diffraction orders during fabrication of light splitting holographic optical elements (HOE). Changing film thickness and recording wavelength it is possible to find optimal conditions for high DE holographic gratings readable at infrared region of lig…
Density variations in liquid tellurium: Roles of rings, chains and cavities
2010
Liquid tellurium has been studied by density-functional/molecular-dynamics simulations at 560, 625, 722, and 970 K and by high-energy x-ray diffraction (HEXRD) at 763 K and 973 K. The HEXRD measurements agree very well with earlier neutron-scattering data of Menelle et al. The density maximum near the melting point (722 K) reflects the competition between twofold and threefold local coordination, which results in chain formation and changed ring statistics at lower $T$, and the variation with $T$ of the volume of cavities ($26--35\text{ }\mathrm{%}$ of the total). A higher-order gradient expansion of the exchange-correlation functional is needed to describe structural details. Changes in th…
Site-specific atomic order and band structure tailoring in the diluted magnetic semiconductor (In,Ga,Mn)As
2021
Physical review / B 103(7), 075107 (1-13) (2021). doi:10.1103/PhysRevB.103.075107
Facile fabrication of flower like self-assembled mesoporous hierarchical microarchitectures of In(OH)3 and In2O3: In(OH)3 micro flowers with electron…
2016
Abstract A template and capping-reagent free facile fabrication method for mesoporous hierarchical microarchitectures of flower-like In(OH) 3 particles under benign hydrothermal conditions is reported. Calcination of In(OH) 3 to In 2 O 3 with the retention of morphology is also described. Both In(OH) 3 and In 2 O 3 microstructures were analyzed with SEM, EDX, TEM and powder X-ray diffraction. The crystal sizes for In(OH) 3 and In 2 O 3 were calculated using the Scherrer equation. In In(OH) 3 the thin flakes at the periphery of micro flowers were electron beam sensitive. The mechanism of self-assembly process was analyzed as well.
Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices
2000
6 páginas, 6 figuras, 1 tabla.
Gas sensing properties of Zn-doped p-type nickel ferrite
2012
Abstract The influence of zinc ion to the NiFe2O4 p-type semiconductor gas response characteristics is demonstrated. For characterization of gas sensor material, synthesized by sol–gel auto combustion method, X-ray diffraction (XRD), scanning electron microscopy (SEM), DC resistance and impedance spectroscopy (IS) measurements were employed. The response change of Zn doped nickel ferrite is related to the interruption of hole hopping between nickel ions. This was improved by change of conductivity type with temperature and gas exposure.
Characterization By Electroreflectance Of Thin Films And Thin Film Interfaces In Layered Structures.
1987
This paper reports investigations of ZnS quasi-amorphous films by electroreflectance (ER). The films were produced by thermal evaporation and their structure determined by electron diffraction. A voltage Vo cos cut was applied through the film with two evaporated Al electrodes. A lock-in amplifier gave 2 signals, Sf at f=ω/2π frequency and S2f at 2f frequency. The S2f spectrum, characteristic of the centrosymmetric bulk component of the film, reveals tails of localized states typical of amorphous semi-conductors. The Sf spectrum, characteristic of the interface layers with broken centro-symmetry, reveals tails of impurity levels which we attributed to diffusion of the electrode metal into t…
Optimization of thermal coefficient of electrical resistivity of Co-Ti-Si thin films due to laser-induced chemical reactions
2001
The CO2 laser induced optimization of the thermal coefficient of electrical resistivity in Co-Ti-Si thin films is realized. The X-ray diffraction studies of the annealed Co- Ti-Si films confirm that the changes of electrical properties are related to forming a small structure of crystalline compounds Ti5Si3 and CoSi2 in an amorphous matrix.