Search results for "Impurity"
showing 10 items of 330 documents
SPATIAL MULTIFRACTALITY OF ELECTRONIC STATES AND THE METAL-INSULATOR TRANSITION IN DISORDERED SYSTEMS
1993
For the investigation of the spatial behavior of electronic wave functions in disordered systems, we employ the Anderson model of localization. The eigenstates of the corresponding Hamiltonian are calculated numerically by means of the Lanczos algorithm and are analyzed with respect to their spatial multifractal properties. We find that the wave functions show spatial multifractality for all parameter cases not too far away from the metal-insulator transition (MIT) which separates localized from extended states in this model. Exactly at the MIT, multifractality is expected to exist on all length scales larger than the lattice spacing. It is found that the corresponding singularity spectrum…
Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities
2003
We have investigated the temperature dependence of the transport parameters of Sn-doped InSe at different pressures, up to 2.5 GPa. A noticeable change in the temperature dependence of all the transport parameters has been observed above 1.2 GPa. This fact is explained by assuming the transformation of Sn shallow donors into deep donors at a hydrostatic pressure of 1.1 GPa, and by taking into account the transfer of electrons from the absolute minimum to higher energy minima in the conduction band. At ambient pressure, the position of the Sn deep level is estimated to lie 75 ± 20 meV above the absolute conduction-band minimum.
First-principles phonon calculations of Fe4+impurity in SrTiO3
2012
The results of hybrid density functional theory calculations on phonons in Sr(Fe(x)Ti(1-x))O(3) solid solution within the formalism of a linear combination of atomic orbitals are presented. The phonon density of states (DOS) calculated for 6.25% Fe(4+) impurities is reported and defect-induced phonon modes are identified. Based on our calculations and group-theoretical analysis, we suggest for the first time an interpretation of experimentally observed Raman- and IR-active modes.
Low temperature mobilities of 2-D electrons in indium selenide: Neutral and ionized impurity scattering
1992
Abstract Low temperature mobility of 2-D electrons in indium selenide is calculated, taking into account neutral and ionized impurity scattering. Two-dimensional electric subbands are originated due to quantum size effects, at both sides of thin ϵ-polytype layers, separated by two stacking faults from the bulk γ-InSe. Ionized impurities are in the ϵ-layer and then, spatially separated from 2-D electrons. Neutral impurities are adsorbed to stacking faults in the ϵ-γ interface. A relaxation time for dipole-like neutral impurity scattering is deduced. Calculated mobilities are compared to previous experimental results and the areal concentration of the neutral impurities is so estimated. The i…
Partial self-consistency and analyticity in many-body perturbation theory: Particle number conservation and a generalized sum rule
2016
We consider a general class of approximations which guarantees the conservation of particle number in many-body perturbation theory. To do this we extend the concept of $\Phi$-derivability for the self-energy $\Sigma$ to a larger class of diagrammatic terms in which only some of the Green's function lines contain the fully dressed Green's function $G$. We call the corresponding approximations for $\Sigma$ partially $\Phi$-derivable. A special subclass of such approximations, which are gauge-invariant, is obtained by dressing loops in the diagrammatic expansion of $\Phi$ consistently with $G$. These approximations are number conserving but do not have to fulfill other conservation laws, such…
<title>Large-scale first-principles calculations of Fe-doped SrTiO<formula><inf><roman>3</roman></inf></formul…
2003
The energy level positions in the optical gap and atomic geometry for the Fe4+ impurity substituting for a host Ti atom in SrTiO3 are calculated using the Unrestricted Hartree-Fock (UHF) method and supercells containing up to 320 atoms. In agreement with experiment, the high spin (S = 2) state is much lower in energy than the zero-spin state. The energy level positions strongly depend on the asymmetric displacements of six nearest O ions which is a combination of the Jahn-Teller and breathing modes. A considerable covalent bonding between the Fe ion and four nearest O ions takes place. We predict a strong dependence of optical absorption energies on the crystal compression or internal tensi…
Ab initio calculations of SrTiO3, BaTiO3, PbTiO3, CaTiO3, SrZrO3, PbZrO3 and BaZrO3 (001), (011) and (111) surfaces as well as F centers, polarons, K…
2014
In this paper, the review of recent results of calculations of surface relaxations, energetics, and bonding properties for ABO 3 perovskite (001), (011) and (111) surfaces using mostly a hybrid description of exchange and correlation is presented. Both AO and BO 2-terminations of the nonpolar (001) surface and A , BO , and O terminations of the polar (011) surface, as well as B and AO 3-terminations of the polar (111) surface were considered. On the AO -terminated (001) surface, all upper-layer A atoms relax inwards, while all second layer atoms relax outwards. For the BO 2-terminated (001) surface, in most cases, the largest relaxations are on the second-layer metal atoms. For almost all …
Annealing of Radiation Defects in X-Irradiated LiBaF3
2002
AbstractResults of application of the glow rate technique GRT for analysis of the activation energy of thermostimulated annealing of X-ray created F-type color centers in LiBaF3 crystals, pure and containing hetero-valence oxygen centers are presented. It is shown that depending on impurity composition in crystal two alternative mechanisms are involved in annealing of color centers. It is proposed that either the anion vacancy governed migration of F- centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine (Fi) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F- type …
Formation of complex defects in Mn c Mg 1–c O and Ni c Mg 1–c O single solid solution
2005
The results of investigation of the fast neutron irradiation and thermal treatment on absorption spectra of single solid solution of MncMg1–cO, NicMg1–cO and MgO crystals are presented. It is shown that at impurity ion concentration larger than 0.1 mass.% a probability of formation of aggregate centers consisting of more than three F+- or F-centers is small. After thermal treatment of MncMg1–cO and NicMg1–cO single solid solution irradiated by fast neutrons additional wide bands are observed. We assume that these additional bands belong to complex centers of Mn3+-VMg and Ni3+-VMg. The mechanisms of bands formation are discussed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Hybrid functional calculations on the Na and K impurities in substitutional and interstitial positions in Cu2ZnSnSe4
2015
We studied the energetics, atomic and electronic structure of Na and K extrinsic defects in Cu2ZnSnSe4 by ab initio calculations using the HSE06 hybrid functional. Our results show that (i) among all substitutional positions, the Cu-site is the most favorable position for both Na and K. (ii) The tetrahedrally coordinated interstitial site has a lower formation energy than the octahedrally coordinated interstitial site. (iii) Based on the band structure calculations we can conclude, Se-related defects lead to the formation of defect states within the band gap.