Search results for "LEM"

2018

Damping distances of surface plasmon polariton modes sustained by different thin titanium nitride (TiN) films are measured at the telecom wavelength of 1.55 μm. The damping distances are correlated to the electrical direct current resistivity of the films sustaining the surface plasmon modes. It is found that TiN/Air surface plasmon mode damping distances drop non-linearly from 40 to 16μm as the resistivity of the layers increases from 28 to 130μΩ.cm, respectively. The relevance of the direct current (dc) electrical resistivity for the characterization of TiN plasmonic properties is investigated in the framework of the Drude model, on the basis of parameters extracted from spectroscopic ell…

Emerging blue-UV luminescence in cerium doped YAG nanocrystals

2016

Physica status solidi / Rapid research letters 10(6), 475 - 479(2016). doi:10.1002/pssr.201600041

Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films

2012

Atomic layer deposition (ALD) of Nb2O5 thin films was studied using three novel precursors, namely, tBuN═Nb(NEt2)3, tBuN═Nb(NMeEt)3, and tamylN═Nb(OtBu)3. These precursors are liquid at room temperature, present good volatility, and are reactive toward both water and ozone as the oxygen sources. The deposition temperature was varied from 150 to 375 °C. ALD-type saturative growth modes were confirmed at 275 °C for tBuN═Nb(NEt2)3 and tBuN═Nb(NMeEt)3 together with both oxygen sources. Constant growth rate was observed between a temperature regions of 150 and 325 °C. By contrast, amylN═Nb(OtBu)3 exhibited limited thermal stability and thus a saturative growth mode was not achieved. All films we…

Atomic Layer Deposition of Osmium

2011

Growth of osmium thin films and nanoparticles by atomic layer deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of deposition cycles. Also conformal growth of Os thi…

Casting technology for ODS steels – dispersion of nanoparticles in liquid metals

2017

Dispersion of particles to produce metal matrix nanocomposites (MMNC) can be achieved by means of ultrasonic vibration of the melt using ultrasound transducers. However, a direct transfer of this method to produce steel composites is not feasible because of the much higher working temperature. Therefore, an inductive technology for contactless treatment by acoustic cavitation was developed. This report describes the samples produced to assess the feasibility of the proposed method for nano-particle separation in steel. Stainless steel samples with inclusions of TiB2, TiO2, Y2O3, CeO2, Al2O3 and TiN have been created and analyzed. Additional experiments have been performed using light metals…

Deep insight into electron transport and photovoltaic parameters in DSSCs

2019

Dye-sensitized solar cells (DSSCs) based on titanium (IV) oxide (TiO2) nanoparticles and nanotubes (NTs) with different weight ratios and phase compositions were fabricated. The obtained nanostructures were investigated using X-ray powder diffraction, scanning electron microscopy, transmission electron microscopy and ultraviolet–visible spectroscopy. Current–voltage measurements and electrochemical impedance spectroscopy were used to investigate the electron transport and photovoltaic performance of DSSCs. An increase of 14% in cell efficiency was achieved by introducing 10 wt% NTs. In this configuration, high dye loading is ensured and substantial improvement in electron transport efficie…

Hydrodynamic Modeling of Transport and Noise Phenomena in Bipolar Two-Terminal Silicon Structures

1998

International audience

Annealing behaviour of aluminium-implanted InP

2000

The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution an…

Creation and thermal annealing of structural defects in neutron-irradiated MgAl 2 O 4 single crystals

2018

Abstract Several novel hole-type defects (a hole localized at a regular oxygen ion near a negatively charged structural defect) have been revealed in fast neutron irradiated MgAl2O4 crystals using the EPR method. The pulse annealing of the EPR signal of these centers was compared to that of radiation induced optical absorption in the same crystals. Taking into account the determined models of V1, V2 and V22 paramagnetic centers, the tentative scenario of the thermal annealing process of neutron-induced defects (hole-type and complementary electron F-type ones) is proposed. In addition, one more paramagnetic hole center consisting of an Al|Mg as-grown antisite defect near an aluminum vacancy…

Atomic structure of manganese-doped yttrium orthoaluminate

2018

Abstract Using hybrid exchange-correlation functional within density functional theory we have performed first-principle total energy calculations of Mn-doped yttrium orthoaluminate (YAlO3). Its equilibrium atomic structure has been predicted through optimization of coordinates of all atoms using a supercell approach. In our research both Mn3+ and Mn2+ ions have been substituted for the host alumina atom at orthorhombic Pbnm unit cell of YAlO3. F-center has been implemented as charge-compensating defect in case, when Mn2+ dopant is under study. In this study we thoroughly analyze the atomic displacements in seven nearest to Mn ion coordination spheres. Insertion of isoelectronic substitutio…