Search results for "LTA"
showing 10 items of 5738 documents
Temperature Coefficients of Solar Cell Parameters at Maximum Power Point
2020
Analytical expressions for the temperature coefficients of the maximum power point voltage and current are presented. The temperature coefficients are calculated assuming the bandgap to be a linear function of the temperature and accounting for energy losses of non-radiative nature. The latter are introduced in the model through the External Radiative Efficiency. The so-called $\gamma$ parameter, which has been shown to account for the thermal sensitivity of all mechanisms determining the open-circuit voltage, appears to also play a role in the temperature coefficient of the maximum power point voltage and current. Numerical results and a comparison with experimental measurements are also p…
Radiation hardness studies of CdTe and for the SIXS particle detector on-board the BepiColombo spacecraft
2009
Abstract We report of the radiation hardness measurements that were performed in the developing work of a particle detector on-board ESA's forthcoming BepiColombo spacecraft. Two different high- Z semiconductor compounds, cadmium telluride (CdTe) and mercuric iodide (HgI 2 ), were irradiated with 22 MeV protons in four steps to attain the estimated total dose of 10 12 p / cm 2 for the mission time. The performance of the detectors was studied before and after every irradiation with radioactive 55 Fe source Mn K α 5.9 keV emission line. We studied the impact of the proton beam exposure on detector leakage current, energy resolution and charge collection efficiency (CCE). Also the reconstruct…
Towards quantum phase slip based standard of electric current
2019
An accurate standard of electric current is a long-standing challenge of modern metrology. It has been predicted that a superconducting nanowire in the regime of quantum fluctuations can be considered as the dynamic equivalent of a chain of conventional Josephson junctions. In full analogy with the quantum standard of electric voltage based on the Josephson effect, the quantum phase slip phenomenon in ultrathin superconducting nanowires could be used for building the quantum standard of electric current. This work presents advances toward this ultimate goal.
Analytic $JV$ -Characteristics of Ideal Intermediate Band Solar Cells and Solar Cells With Up and Downconverters
2017
The ideal diode equation is regularly used to describe the $\textit {JV}$ -characteristic of single junction solar cells. The connection between the diode equation and fundamental physics is the application of the Boltzmann approximation to describe the fluxes of photons emitted by the cell. In this paper, this approximation is used to derive analytic $\textit {JV}$ -characteristics for three photovoltaic high-efficiency concepts, intermediate band solar cells, and solar cells optically coupled to up and downconverters. These three concepts share the common feature that they allow excitation of electrons between at least three energy levels, which assures a better utilization of the solar s…
A summary of expressions for central performance parameters of high efficiency solar cell concepts
2019
This work reviews expressions for central performance parameters of various types of PV-concepts when operating at the radiative limit. Some new expressions not published elsewhere are also included. The performance parameters include the short circuit current density, the open circuit voltage, the maximum power density and the optimal voltage. The cell concepts include single junction cells, cells optically coupled to up- and down-converters, intermediate band solar cells and a couple of implementations of multijunction devices. The Lambert W function is used to express the maximum power density.
Effect of Polarity Reversal on the Partial Discharge Phenomena
2020
In the field of High Voltage Direct Current (HVDC) transmission, the space charge accumulation phenomenon and the Partial Discharges (PD) phenomena are considered the main causes of dielectric ageing. During the years, the degradation effect of both phenomena under constant DC stress has been widely studied by several researchers. In case of polarity reversal, typically carried out to control bi-directional power flow between interconnected High Voltage transmission systems, the space charge movement may not synchronously follow the electric field polarity. This could make the moment of reversing polarity a very critical one, where space charge injected during preceding polarity produces hi…
Polarity reversal in HVDC joints - The effect of the axial thermal conduction
2020
It has been shown that the establishment of a thermal gradient over the radius of HVDC cables involves the accumulation of space charge within the dielectric layer. High thermal gradients over the insulation thickness of loaded cables can lead to the inversion of the radial electric field pattern. In this scenarios, transient overvoltages and polarity reversal can lead to local and transitory peaks of electric field. Since the temperature distribution plays an important role in reaching critical values of the electric field, it has been considered interesting to have a more in-depth view of the thermal behavior of HVDC systems close the discontinuities of the geometry along the cable axis. …
Negative differential resistance and threshold-switching in conical nanopores with KF solutions
2021
Negative differential resistance (NDR) phenomena are under-explored in nanostructures operating in the liquid state. We characterize experimentally the NDR and threshold switching phenomena observed when conical nanopores are immersed in two identical KF solutions at low concentration. Sharp current drops in the nA range are obtained for applied voltages exceeding thresholds close to 1 V and a wide frequency window, which suggests that the threshold switching can be used to amplify small electrical perturbations because a small change in voltage typically results in a large change in current. While we have not given a detailed physical mechanism here, a phenomenological model is also includ…
Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization
2020
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…
Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis
2017
AbstractIn a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get r…